Infineon Technologies CY15B102QN-50SXI

Overview

CY15B102QN from Infineon is a 2 Mb serial ferroelectric RAM (F-RAM) organized as 256K × 8, operating over SPI at up to 50 MHz with 1.8 V–3.6 V supply, 10¹⁵ write endurance, and 151-year data retention. It serves as a nonvolatile memory replacement for EEPROM/flash in real-time data logging, industrial controllers, and metering systems requiring instant writes without polling.

For engineers reviewing the CY15B102QN datasheet, CY15B102QN pinout, CY15B102QN application, or CY15B102QN equivalent, key selection criteria include SPI mode 0/3 compatibility, hardware/software write protection, deep power-down current (0.1 µA), dedicated 256-byte special sector, and industrial temperature range (–40°C to +85°C).

Technical Context

The CY15B102QN implements a true SPI slave interface with zero-write-latency architecture: data commits immediately upon byte transfer completion, eliminating status polling. Its ferroelectric memory array enables deterministic write timing independent of address location or prior erase cycles.

It integrates dual-layer write protection-hardware via active-low WP pin and software via WRDI instruction and configurable block protection (1/4, 1/2, or full array)-and includes factory-programmed Device ID, Unique ID, and user-writable 8-byte serial number registers.

Key Specifications

Pinout & Package

Available in 8-pin SOIC, PDIP, and DFN packages. All variants share identical pin mapping and function definitions per Infineon datasheet Rev. *D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B102QSN, the CY15B102QN offers identical functionality in standard SOIC without exposed pad; versus FM25V20A-G, it adds 1.8 V support, 50 MHz speed, special sector, and serial number-critical for next-gen compact, low-power, and traceable designs.

Availability

CY15B102QN is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical diagnostics, and automotive telematics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY15B102QN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line delivers ultra-high-endurance, low-latency nonvolatile memory targeting applications where flash/EEPROM limitations-write delay, endurance fatigue, and power overhead-compromise system reliability.

FAQ

Is CY15B102QN pin-compatible with standard SPI EEPROMs like AT25DF021?

No. While CY15B102QN uses standard SPI pins (CS, SCK, SI, SO, WP), its command set, status register layout, and absence of erase commands differ fundamentally. Direct replacement requires firmware modification to remove polling loops and adapt opcode sequences.

Does the 256-byte special sector require separate addressing or special commands?

Yes. The special sector resides at fixed addresses 0x3F000–0x3F0FF and is accessed using dedicated opcodes (0x42 for read, 0x43 for write) distinct from main array commands. It supports individual byte writes and retains data through ≥3 reflow cycles without additional qualification.

Can WP pin be left unconnected if software write protection is used exclusively?

No. Per datasheet Section 2, WP must be tied to VDD if unused. Leaving it floating violates DC specifications and may cause unpredictable write-enable behavior due to noise susceptibility on this critical protection input.

What is the maximum achievable sustained write throughput in continuous burst mode?

At 50 MHz SPI clock with 8-bit transfers, theoretical peak is 50 MB/s, but practical sustained throughput is ~4.8 MB/s (40 MHz × 1 byte/cycle × 80% efficiency) for sequential 256K-byte writes-limited by host MCU SPI DMA bandwidth and command overhead, not F-RAM latency.