Infineon Technologies CY15B102QSN-108SXI

Overview

CY15B102QSN-108SXI from Infineon is a 2-Mbit serial ferroelectric RAM (F-RAM) organized as 256K × 8, supporting quad SPI (QPI) up to 108 MHz SDR and 54 MHz DDR, with 100 trillion (10¹⁴) read/write endurance and 151-year data retention at +85°C. It operates from 1.8 V to 3.6 V and is housed in an 8-pin SOIC package for industrial data logging and real-time control systems.

For engineers reviewing the CY15B102QSN-108SXI datasheet, CY15B102QSN-108SXI pinout, CY15B102QSN-108SXI application, or CY15B102QSN-108SXI equivalent, key selection factors include instant non-volatile write capability, on-die ECC/CRC, hardware/software write protection, dedicated 256-byte reflow-survivable sector, and support for XIP memory access in high-cycle-rate embedded systems.

Technical Context

The CY15B102QSN-108SXI implements a true nonvolatile RAM architecture using lead zirconate titanate (PZT) ferroelectric capacitors, enabling byte-level writes without erase cycles or write latency. Its SPI controller supports mode 0 and mode 3 for SDR, mode 0 only for DDR, and full QPI/DPI/SDI protocols - all with deterministic timing and no polling required.

On-die error handling includes per-8-byte ECC that detects and corrects single-bit errors and flags double-bit errors via status register, plus CRC-16 for array-level data integrity verification. The device integrates dedicated configuration registers (CR1–CR5), two status registers (SR1/SR2), and programmable serial number storage within its 256-byte special sector.

Key Specifications

Pinout & Package

Package: 8-pin Small Outline Integrated Circuit (SOIC), 150-mil width, RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile serial memory applications.

Compared with AT25SF041B-MAHB-T, the CY15B102QSN-108SXI provides 10⁹× higher endurance and zero write latency but at ~2.5× unit cost and half the density; compared with CY15V102QSN-108SXI, it supports wider voltage range (1.8–3.6 V vs. 1.71–1.89 V) for mixed-supply designs.

Availability

CY15B102QSN-108SXI is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, programmable logic controllers, and medical sensor hubs requiring stable component supply over extended production lifecycles.

Supply support for CY15B102QSN-108SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and high-reliability memory solutions, with global R&D and manufacturing infrastructure.

The EXCELON™ Ultra F-RAM product line targets applications demanding extreme write endurance and deterministic nonvolatile storage - specifically replacing serial flash and EEPROM in industrial, energy, and medical systems where data integrity and cycle life are mission-critical.

FAQ

Does CY15B102QSN-108SXI require external hardware for write protection?

No. The device integrates dual-layer write protection: hardware-based via the dedicated WP pin (active-low, latched), and software-based through configurable block protection bits in CR1. Both can be enabled simultaneously for defense-in-depth security against accidental or malicious writes.

Can CY15B102QSN-108SXI operate in execute-in-place (XIP) mode?

Yes. The device supports XIP for read operations only - instructions or constants stored in F-RAM can be fetched directly by the host processor over QPI/SDR without copying to RAM. Write operations still require standard SPI command sequences and cannot occur during XIP fetch cycles.

What is the maximum junction temperature during reflow soldering?

The CY15B102QSN-108SXI is qualified for standard lead-free reflow per JEDEC J-STD-020. Peak temperature is 260°C for ≤60 seconds, with the 256-byte special sector guaranteed to retain data across three such cycles - verified per datasheet section "Special Sector Reliability".

How does the on-die ECC interact with the special sector?

ECC applies uniformly across the main 256K × 8 array and the 256-byte special sector. Each 8-byte unit undergoes independent Hamming-code correction; no separate ECC configuration is needed. The special sector's reflow survivability is unaffected by ECC operation, as error correction logic resides outside the ferroelectric memory cells.