Infineon Technologies CY15B104QSN-108LPXIT

Overview

CY15B104QSN-108LPXIT from Infineon is a 4 Mb serial ferroelectric RAM (F-RAM) organized as 512K × 8, supporting quad SPI (QPI) up to 108 MHz SDR and 54 MHz DDR, with 100 trillion (10¹⁴) read/write endurance, 151-year data retention, and industrial temperature range (–40°C to +85°C). It serves as non-volatile memory in real-time data logging, industrial PLCs, and metering systems where rapid, reliable writes replace flash or EEPROM.

For engineers reviewing the CY15B104QSN-108LPXIT datasheet, CY15B104QSN-108LPXIT pinout, CY15B104QSN-108LPXIT application, or CY15B104QSN-108LPXIT equivalent, key selection criteria include instant write capability at bus speed, on-die ECC/CRC for data integrity, hardware/software write protection, and compatibility with 1.8 V–3.6 V supply and SOIC-8 packaging.

Technical Context

The CY15B104QSN-108LPXIT implements a true non-volatile RAM architecture using lead zirconate titanate (PZT) ferroelectric capacitors, enabling byte-level random access reads/writes without erase cycles or wear leveling. Its SPI interface supports mode 0 (SDR/DDR) and mode 3 (SDR only), with dedicated QPI instruction set for high-throughput transfers.

It integrates dual status registers (SR1/SR2), four configuration registers (CR1–CR5), and dedicated 256-byte special sector F-RAM that survives three reflow cycles. On-die ECC corrects 1-bit errors per 8-byte unit and reports 2-bit errors via SR2, while CRC validates full-array data integrity.

Key Specifications

Pinout & Package

Package: 8-pin SOIC (Small Outline Integrated Circuit), 150 mil width, RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with CY15B104QSN-108LAXI, the LPXIT variant offers proven manufacturability in SOIC-8 and superior thermal performance; versus FM25V04-G, it delivers 2.7× faster interface, full ECC/CRC, and broader voltage compatibility - critical for next-gen IIoT edge nodes.

Availability

CY15B104QSN-108LPXIT is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, programmable logic controllers, and medical diagnostic equipment requiring stable component supply across multi-year production cycles.

Supply support for CY15B104QSN-108LPXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

The EXCELON™ Ultra F-RAM product line targets high-reliability, high-write-frequency applications where flash endurance, write latency, or data retention fall short - delivering RAM-like usability with non-volatile persistence.

FAQ

Is CY15B104QSN-108LPXIT pin-compatible with CY15B104QSN-108LAXI?

No. While both share identical electrical functionality and command set, CY15B104QSN-108LPXIT uses an 8-pin SOIC package (5.3 mm × 6.2 mm), whereas CY15B104QSN-108LAXI uses an 8-pin GQFN (3 mm × 3 mm). Footprint, solder paste stencil, and reflow profile differ significantly - direct substitution requires PCB redesign.

Does CY15B104QSN-108LPXIT require external pull-up resistors on WP or RESET pins?

Yes. The WP pin is internally weakly pulled high but requires an external 10 kΩ pull-up to VDD for reliable hardware write protection. RESET has no internal pull-up and must be externally pulled high (typically 10 kΩ to VDD) unless actively driven by the host MCU to ensure proper initialization after power-on.

Can the 256-byte special sector be used for storing cryptographic keys?

Yes. The dedicated special sector retains data through three standard reflow cycles and supports individual byte writes. Its isolation from main array operations makes it suitable for storing immutable keys or calibration constants - though key management logic must reside in host firmware, as the device provides no built-in crypto acceleration.

What happens during a power loss mid-write in QPI mode?

The device guarantees atomicity at the byte level: any successfully transferred byte before power loss is retained; incomplete transfers abort cleanly with no partial writes or array corruption. No external capacitor or backup supply is needed - this behavior stems from ferroelectric physics, not internal charge storage.