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Infineon Technologies CY15B108QI-20BFXIT

Part No.:
CY15B108QI-20BFXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-UFLGA
Datasheet:
AetrixCY15B108QI-20BFXIT.pdf
Description:
IC FRAM 8MBIT SPI 8UFLGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,333

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Product details

Overview

CY15B108QI-20BFXIT from Infineon is an 8-Mbit serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating over SPI at up to 20 MHz with 1.8–3.6 V supply, 1015 write endurance, and 151-year data retention. It serves as a nonvolatile memory replacement for EEPROM/flash in high-write-cycle industrial data loggers, sensor nodes, and metering systems where instant write and low power are critical.

For engineers reviewing the CY15B108QI-20BFXIT datasheet, CY15B108QI-20BFXIT pinout, CY15B108QI-20BFXIT application, or CY15B108QI-20BFXIT equivalent, key selection factors include its bus-speed write capability (no polling), inrush current control, hardware/software write protection, dedicated 256-byte special sector, and industrial −40°C to +85°C operation.

Technical Context

The CY15B108QI-20BFXIT implements a true SPI slave interface compliant with modes 0 and 3, supporting full-duplex communication with SI/SO pins and chip-select–driven activation. Its internal architecture eliminates write latency by performing byte-level nonvolatile writes synchronously with SPI clock edges-no erase cycles or status polling required.

It integrates dual-layer write protection: hardware-level via active-low WP pin (when WPEN=1) and software-level via WRDI instruction and configurable block protection (1/4, 1/2, or full array). A dedicated 256-byte special sector retains data across three reflow cycles, and device identification includes manufacturer ID, product ID, unique device ID, and user-writable 8-byte serial number.

Key Specifications

ParameterValue and Actual Design Meaning
Memory density8 Mbit (1024K × 8); supports byte-addressable nonvolatile storage without page/sector erase overhead.
SPI speedUp to 20 MHz; enables 2.5 MB/s sustained write throughput with zero wait states.
Write endurance1015 read/write cycles; supports >273 years of continuous 100-Hz logging at full array depth.
Data retention151 years at +85°C; guarantees data integrity without refresh or backup power in unattended deployments.
Supply voltage1.8 V to 3.6 V; interoperable with 1.8 V, 2.5 V, and 3.3 V microcontroller I/O domains.
Operating temperature−40°C to +85°C; qualified for industrial environments including factory automation and smart grid infrastructure.
Deep power-down current0.90 µA typical; reduces system standby power in battery-powered edge sensors.

Pinout & Package

Package: 8-pin ultra-thin fine-pitch land grid array (UFLGA), 2.0 mm × 2.5 mm × 0.5 mm, RoHS-compliant, NRND status noted but commercially available per Infineon documentation.

Pin/TerminalCircuit RoleDesign Meaning
CSActive-low chip select inputEnables SPI communication; device enters tristate and standby when HIGH, eliminating bus contention in multi-device configurations.
SCKSerial clock inputSynchronizes all data transfers; rising edge latches inputs, falling edge drives outputs-supports interrupted clock and variable frequency (0–20 MHz).
SISerial data inputReceives opcodes, addresses, and write data; may be shared with SO in single-wire mode per design note.
SOSerial data outputDrives read data on falling SCK edge; remains high-impedance during writes and standby to prevent signal conflicts.
WPHardware write protect inputBlocks Status Register writes when WPEN=1; must be tied to VDD if unused to prevent accidental lockout.
DNUNo-connect terminalNot internally bonded; floating or tied to VDD-no electrical function or timing impact.
VSSGround referencePrimary return path for all digital and analog currents; requires low-impedance connection to system ground plane.
VDDPower supply inputSupplies core logic and memory array; supports inrush current control circuitry to limit peak startup draw to 1.6 mA typical.

Key Features

FeatureDesign Value
Instant nonvolatile writeWrites complete at bus speed-no delay between byte transfer and data persistence; eliminates firmware polling loops and timeout handling.
Dedicated special sector256-byte F-RAM region survives ≥3 reflow cycles; enables secure storage of calibration data, MAC addresses, or firmware version stamps directly on PCB.
Inrush current controlPeak startup current limited to 1.6 mA typical; prevents brown-out in power-constrained systems during cold boot or reset recovery.
Unique device identificationFactory-programmed 64-bit unique ID + 8-byte writable serial number; supports device traceability, secure boot binding, and field asset management.
Multi-layer write protectionHardware (WP pin) + software (WRDI, BP bits) protection; prevents unintended writes during ESD events, firmware bugs, or voltage droops.

Applications

Industrial Data LoggerSmart Electricity Meter

Use Scenario: Continuous timestamped sensor sampling (temperature, pressure, vibration) at 100 Hz in remote substations with no external backup power.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory storing raw samples before batch upload; performs 100% reliable writes during mains dropout or brown-out events.

Use Value: Eliminates flash wear leveling complexity and guarantees 151-year retention without supercapacitor or battery support.

Use Scenario: Tamper-evident energy consumption logging with cryptographic signature generation and secure firmware updates.

IC Role / Device Role / Timing Role: Secure storage for metering registers, tamper logs, and public-key certificates; accessed via SPI by secure MCU during boot and update phases.

Use Value: Unique ID enables device-specific key binding; 1015 endurance supports daily firmware patching over 40+ year service life.

PLC I/O ModuleMedical Diagnostic Sensor Hub

Use Scenario: Real-time state capture of discrete I/O transitions and analog input snapshots during cyclic scan execution in harsh factory environments.

IC Role / Device Role / Timing Role: High-speed nonvolatile buffer capturing transient faults or configuration changes; written synchronously with each PLC scan cycle.

Use Value: Zero-latency writes ensure no transition is missed-even during 10 kHz edge detection; −40°C to +85°C rating ensures reliability in unconditioned cabinets.

Use Scenario: Portable ultrasound or ECG device requiring calibration persistence across sterilization cycles and battery replacements.

IC Role / Device Role / Timing Role: Stores sensor gain offsets, probe IDs, and patient session metadata; special sector retains calibration data through three reflow cycles during board rework.

Use Value: 0.90 µA deep power-down current extends battery life; 1.8 V minimum VDD enables direct connection to Li-ion cell without LDO.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY15B108QN-20BFXITSame die, 8-pin GQFN package (2.5 mm × 2.5 mm); higher thermal resistance; NRND status confirmed.Preferred where board space allows larger footprint and legacy GQFN assembly lines are in use.Select only if UFLGA reflow compatibility is unavailable; identical electrical behavior and timing.
FM25V05-GCypress (now Infineon) 512-Kbit F-RAM; 1.7–2.2 V supply; max 40 MHz SPI; no special sector or unique ID.Suitable for lower-density, ultra-low-voltage designs where 8 Mbit and industrial temp range are not required.Choose for cost-sensitive, sub-2 V systems; not drop-in due to density, voltage, and feature gaps.

Compared with CY15B108QN-20BFXIT, the UFLGA variant offers smaller footprint and better thermal performance; versus FM25V05-G, it delivers 16× density, wider voltage range, and enhanced security features-making it optimal for next-gen industrial edge nodes.

Availability

CY15B108QI-20BFXIT is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, and PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY15B108QI-20BFXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and high-reliability memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The EXCELON™ LP F-RAM product line targets high-endurance, low-power nonvolatile memory applications in industrial automation, energy infrastructure, and medical devices-designed to replace flash and EEPROM where write speed, reliability, and longevity are critical.

FAQ

Is CY15B108QI-20BFXIT pin-compatible with standard SPI EEPROMs or flash devices?

No-it shares the same 8-pin SPI pinout (CS, SCK, SI, SO, WP, VSS, VDD, DNU) but differs electrically: no write enable polling, no erase commands, and no address latching delays. Firmware must be adapted to omit status polling and erase sequences, though command opcodes for read/write are SPI-standard.

Does the "DNU" pin require any PCB layout treatment?

Yes-the DNU pin is not internally connected and must either be left floating (unrouted) or tied to VDD. Routing it to ground or driving it actively violates datasheet specifications and may increase leakage or cause undefined behavior during power-up sequencing.

How is the 151-year data retention validated?

Infineon validates retention per JEDEC JESD22-A117 using accelerated high-temperature testing (125°C, 150°C) with Arrhenius modeling, extrapolated to real-world conditions. The 151-year figure applies at +85°C ambient and assumes proper PCB layout (ground plane, decoupling) and VDD within 1.8–3.6 V tolerance.

Can the special sector be used for secure key storage?

While the 256-byte special sector survives reflow and supports write protection, it lacks hardware encryption or access control. It is suitable for static keys only when combined with external secure elements or MCU-based key wrapping; Infineon does not guarantee cryptographic isolation within this sector.

CY15B108QI-20BFXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-UFLGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
SPI
Clock Frequency:
20 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.8V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UFLGA (3.28x3.23)

CY15B108QI-20BFXIT FAQ

1.How can I place an order for CY15B108QI-20BFXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY15B108QI-20BFXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY15B108QI-20BFXIT reliable?

The price and inventory of CY15B108QI-20BFXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B108QI-20BFXIT is usually 5 days.

3.What payment methods are accepted for CY15B108QI-20BFXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B108QI-20BFXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY15B108QI-20BFXIT?

CY15B108QI-20BFXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY15B108QI-20BFXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY15B108QI-20BFXIT?

For technical support, including CY15B108QI-20BFXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B108QI-20BFXIT requirements.

6.How does Aetrix verify that CY15B108QI-20BFXIT is sourced from the original manufacturer or authorized distributors?

All CY15B108QI-20BFXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B108QI-20BFXIT meets industry standards.

7.What is the process for return or replacement of CY15B108QI-20BFXIT?

All CY15B108QI-20BFXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY15B108QI-20BFXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY15B108QI-20BFXIT part is unused and in its original packaging.

Return procedure for CY15B108QI-20BFXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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