Infineon Technologies CY15B108QI-20LPXI

Overview

CY15B108QI-20LPXI from Infineon is an 8-Mbit serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating over SPI at up to 20 MHz with 1.8–3.6 V supply, 10¹⁵ write endurance, and 151-year data retention. It serves as a nonvolatile memory replacement for EEPROM/flash in high-write-cycle industrial data loggers, metering systems, and real-time control units where instant write and low power are critical.

For engineers reviewing the CY15B108QI-20LPXI datasheet, CY15B108QI-20LPXI pinout, CY15B108QI-20LPXI application, or CY15B108QI-20LPXI equivalent, this page delivers verified technical context, SPI timing constraints, write-protection architecture, inrush current control behavior, and validated drop-in alternatives for industrial-grade nonvolatile memory selection.

Technical Context

The CY15B108QI-20LPXI implements a true SPI slave interface supporting modes 0 and 3, with zero-latency writes-no polling required-and immediate byte-level persistence after each SPI transfer. Its internal ferroelectric array eliminates erase cycles and enables deterministic 20 MHz bus-speed writes across full temperature range (–40°C to +85°C).

It integrates hardware write protection via the active-low WP pin, software-controlled status register locking (WRDI), and configurable block protection (1/4, 1/2, or full array). A dedicated 256-byte special sector survives up to three reflow cycles, and device identification includes manufacturer ID, product ID, unique device ID, and user-writable 8-byte serial number.

Key Specifications

Pinout & Package

Package: 8-pin ultra-thin fine-pitch land grid array (UFLGA), 2.0 mm × 2.5 mm × 0.55 mm, RoHS-compliant, industrial-grade thermal profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B108QN-20LPXI and FM25V05-G, the CY15B108QI-20LPXI uniquely combines 8-Mbit density, 1.8–3.6 V flexibility, UFLGA footprint, reflow-hardened sector, and factory-unique ID-making it the sole option for next-gen industrial edge nodes demanding scalability, traceability, and zero-compromise reliability.

Availability

CY15B108QI-20LPXI is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical diagnostics, and automotive telematics requiring stable component supply across extended temperature and long-life product cycles.

Supply support for CY15B108QI-20LPXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line targets high-reliability, high-write-frequency nonvolatile memory applications where flash and EEPROM fail-delivering instant write, extreme endurance, and ultra-low power in compact packages.

FAQ

Is CY15B108QI-20LPXI pin-compatible with standard SPI EEPROMs or flash devices?

No-it shares the same 8-pin SPI pinout (CS, SCK, SI, SO, WP, VSS, VDD, DNU) but differs electrically: WP is active-low hardware lock for Status Register only, DNU must be floated or tied to VDD, and SO is strictly push-pull (not open-drain). Direct replacement requires verifying WP handling and DNU routing in existing layouts.

Does the 256-byte special sector require separate addressing or command set?

Yes-the special sector uses dedicated opcodes (0x77 for read, 0x78 for write) and occupies address range 0xFFFC00–0xFFFDFF. It is write-protected by default and requires explicit unlock sequence before programming. Its contents survive reflow because ferroelectric cells retain polarization through soldering thermal profiles.

What is the actual power-up sequence requirement for reliable initialization?

VDD must ramp monotonically from 0 V to nominal (1.8–3.6 V) within 100 ms; CS must remain HIGH until VDD stabilizes and ≥100 µs elapse post-stabilization. Failure to observe this causes undefined status register state and may require WRDI + WREN sequence before first write.

How does inrush current control function during cold start?

An internal charge pump limiter caps peak inrush to 1.6 mA typical by throttling internal capacitance charging rate. This prevents system rail collapse in multi-load environments-verified across –40°C to +85°C-without external current-limiting resistors or soft-start circuits.