Infineon Technologies CY15B201QN-50SXET

Overview

CY15B201QN-50SXET from Infineon is an automotive-grade 1-Mb serial ferroelectric RAM (F-RAM) organized as 128 K × 8, supporting SPI up to 50 MHz, operating from 1.8 V to 3.6 V, and rated for –40°C to +125°C. It delivers instant non-volatile writes with no write delay, 10¹³ read/write endurance, and 121-year data retention-enabling reliable logging in engine control units and ADAS sensor fusion nodes.

For engineers reviewing the CY15B201QN-50SXET datasheet, CY15B201QN-50SXET pinout, CY15B201QN-50SXET application, or CY15B201QN-50SXET equivalent, key selection criteria include SPI mode 0/3 compatibility, WP pin-based hardware write protection, 256-byte dedicated special sector survivability across reflow cycles, and AEC-Q100 Grade 1 qualification for under-hood deployment.

Technical Context

The CY15B201QN-50SXET implements a true SPI slave interface with zero-latency write execution: data is committed to non-volatile memory immediately upon byte transfer completion, eliminating polling and timeout handling required by flash/EEPROM. Its internal architecture integrates a 128 K × 8 main F-RAM array, a separate 256-byte special sector, Device ID/Unique ID registers, and a non-volatile status register with WPEN bit control.

Write protection operates at three levels: hardware via active-low WP pin (when WPEN = 1), software via WRDI instruction, and configurable block protection (1/4, 1/2, or full array). The device supports both SPI Mode 0 (CPOL = 0, CPHA = 0) and Mode 3 (CPOL = 1, CPHA = 1), with SI/SO pins operating on SCK rising/falling edges respectively and CS falling-edge synchronization for opcode initiation.

Key Specifications

Pinout & Package

Package: 8-pin Small Outline Integrated Circuit (SOIC), RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ferroelectric RAM applications.

Compared with CY15B201QN-50SXET, CY15B102QN-50ZSXE offers double capacity with identical timing and qualification, while FM25V20A-G trades special-sector reliability and identity features for marginally lower cost in less demanding automotive contexts.

Availability

CY15B201QN-50SXET is available at Aetrix Electronics and suitable for engine control units, ADAS sensor fusion nodes, electric power steering modules, and automotive gateway systems requiring stable component supply across extended product lifecycles.

Supply support for CY15B201QN-50SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and high-reliability memory solutions for safety-critical systems.

The EXCELON™ Auto F-RAM product line targets automotive applications demanding ultra-high endurance, instant write, and long-term data integrity-specifically designed for ECU logging, ADAS data buffering, and functional safety-critical configuration storage.

FAQ

Does CY15B201QN-50SXET require external high-voltage programming pulses like EEPROM?

No. The CY15B201QN-50SXET uses ferroelectric capacitor technology that enables standard 1.8–3.6 V write operations with no charge pumps or high-voltage generators. All writes occur at bus speed using standard SPI commands-eliminating the 5–20 ms delays and complex timing sequences required by EEPROM.

Can the WP pin be left unconnected in a design?

Yes-the WP pin has an internal weak pull-up resistor, so it defaults to HIGH (write-enabled) when floating. However, for robustness in noisy automotive environments, Infineon recommends tying WP to VDD via a 10 kΩ resistor or directly connecting it if hardware write protection is not needed.

What is the purpose of the 256-byte special sector, and how is it accessed?

The 256-byte special sector is a physically separate F-RAM region designed to retain data through up to three standard lead-free reflow soldering cycles (260°C peak). It is accessed using dedicated opcodes (0x77 for write, 0x78 for read) and resides at fixed address 0x000000–0x0000FF-enabling post-manufacturing calibration storage without risk of erasure during assembly.

Is CY15B201QN-50SXET compatible with existing SPI EEPROM drivers?

Yes-its command set is largely EEPROM-compatible (e.g., WREN, WRDI, READ, WRITE), but requires minor firmware updates to omit polling loops and handle the Device ID/Unique ID registers. The pinout and timing (especially t_W = 0 ns) allow drop-in replacement on most layouts, though WP pin behavior differs from typical EEPROM hardware protect schemes.