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Infineon Technologies CY15B256J-SXAT

Part No.:
CY15B256J-SXAT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixCY15B256J-SXAT.pdf
Description:
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,608

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Product details

Overview

CY15B256J-SXAT from Cypress Semiconductor is a 256-Kbit (32K × 8) automotive-grade serial F-RAM with I²C interface, operating from 2.0 V to 3.6 V over –40 °C to +85 °C. It delivers NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention-enabling reliable nonvolatile logging in vehicle control units, ADAS event recorders, and powertrain ECUs.

For engineers reviewing the CY15B256J-SXAT datasheet, CY15B256J-SXAT pinout, CY15B256J-SXAT application, or CY15B256J-SXAT equivalent, key selection criteria include I²C bus-speed write capability (no polling), automotive temperature compliance, WP-enabled hardware write protection, and drop-in replacement feasibility for legacy serial EEPROM in safety-critical embedded systems.

Technical Context

The CY15B256J-SXAT implements a ferroelectric memory array logically organized as 32,768 × 8 bits, accessed via standard two-wire I²C protocol with slave address 0xA0–0xA7 (A0–A2 configurable). It supports standard-mode (100 kHz), fast-mode (400 kHz), and high-speed mode (3.4 MHz) with master code handshake.

Its control logic eliminates write latency by performing byte-level writes at bus speed-no internal write cycle delay, no status polling, and no elevated voltage generation. The device integrates on-die Device ID (manufacturer + product ID) and hardware write protect (WP pin) for secure, deterministic memory access in automotive subsystems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size256 Kbit (32K × 8); provides 32,768 addressable bytes for firmware parameter storage or runtime event logging.
InterfaceI²C two-wire serial; compatible with microcontroller I²C peripherals without protocol translation or glue logic.
Write Endurance10¹⁴ cycles; supports >27,000 writes/second continuously for 10+ years-ideal for high-frequency sensor data capture.
Data Retention151 years at +85 °C; ensures integrity of calibration data and fault logs across full vehicle lifecycle without refresh.
Operating Voltage2.0 V to 3.6 V; matches automotive MCU I/O rails and enables direct connection to 3.3 V domains without level shifters.
Temperature Range–40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 for under-hood and cabin ECU deployment.
Active Current175 µA at 100 kHz; minimizes power impact during periodic CAN message timestamping or diagnostic log updates.

Pinout & Package

Package: 8-pin SOIC (Small Outline Integrated Circuit), surface-mount, RoHS-compliant, 150 mil body width.

Pin/TerminalCircuit RoleDesign Meaning
A0–A2Device Select Address InputsConfigure slave address bits 3–1 (0xA0–0xA7); enable up to eight devices on same I²C bus without address conflict.
SDASerial Data I/OBidirectional open-drain I²C data line with Schmitt trigger input and slope-controlled output; requires external pull-up.
SCLSerial Clock InputMaster-generated clock; rising edge samples data, falling edge outputs data; includes Schmitt trigger for noise immunity.
WPHardware Write ProtectActive-high signal; ties entire memory map read-only when pulled to VDD-prevents accidental overwrites during firmware updates.
VDDPower Supply2.0–3.6 V supply input; powers internal logic and F-RAM array; decoupling capacitor required near pin.
VSSGround ReferenceSystem ground return path; must be low-impedance connection to minimize noise coupling into sensitive analog sections.

Key Features

FeatureDesign Value
NoDelay™ Write ArchitectureWrites complete within one I²C byte transfer-eliminates software polling loops and reduces CPU overhead by >95% vs. EEPROM.
Ferroelectric Memory CoreNonvolatile storage without charge pumps or high-voltage generators-reduces EMI, simplifies PCB layout, and improves system-level reliability.
Hardware Write ProtectionPin-controlled (WP) global lock prevents unintended writes during power transients or reset sequences-critical for ASIL-B functional safety compliance.
Device ID RegisterRead-only Manufacturer ID (0x01) and Product ID (0x59); enables runtime verification of correct memory part in multi-supplier BOMs.
Low-Power Sleep Mode8 µA standby current; allows continuous power monitoring while preserving memory state during vehicle sleep modes (e.g., CAN wake-on-event).

Applications

Telematics Event LoggingPowertrain ECU Calibration Storage

Use Scenario: Capturing GPS coordinates, accelerometer triggers, and crash pulse data at 100 Hz during vehicle incidents.

IC Role / Device Role / Timing Role: Nonvolatile buffer for time-stamped telemetry; writes occur synchronously with CAN frame timestamps.

Use Value: 10¹⁴ endurance ensures >30 years of incident logging at 100 Hz without wear-out; zero-write-latency prevents data loss during rapid successive events.

Use Scenario: Storing adaptive fuel trim tables and ignition timing offsets updated during closed-loop engine operation.

IC Role / Device Role / Timing Role: Runtime-configurable parameter store accessible via microcontroller I²C during idle or deceleration phases.

Use Value: Eliminates 5–10 ms EEPROM write delays-enables real-time calibration updates without interrupting combustion control loop timing.

ADAS Camera Module ConfigurationBody Control Module (BCM) State Memory

Use Scenario: Holding lens focus offset, white balance coefficients, and exposure settings across camera power cycles.

IC Role / Device Role / Timing Role: Persistent configuration register mapped to I²C address space; loaded at boot before image processing pipeline initialization.

Use Value: 151-year data retention guarantees factory calibration remains valid over full vehicle service life-even after repeated thermal cycling in dashboard environments.

Use Scenario: Saving door lock state, window position, mirror angle, and lighting profiles between ignition cycles.

IC Role / Device Role / Timing Role: Low-power nonvolatile scratchpad; written only on user action (e.g., "save seat position") and read at power-on reset.

Use Value: 8 µA sleep current extends battery drain budget in parked BCM; WP pin prevents corruption during jump-start voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AT24C256C-SSHL-T (Microchip)256-Kbit I²C EEPROM; 1M write cycles; 10 ms typical write time; 1.7–5.5 V operation.Lacks automotive temp rating (–40 °C to +85 °C not guaranteed); no hardware WP pin; higher write latency limits high-frequency logging.Select only for cost-sensitive non-automotive designs where write frequency <100×/hour and extended temperature range is not required.
FM24V10-G (Cypress)1-Mbit I²C F-RAM; identical endurance (10¹⁴), retention (151 yr), and automotive temp grade; 2.7–3.6 V only.Higher density enables consolidated storage of multiple ECU datasets; narrower VDD range may require LDO redesign in 2.0 V systems.Choose when >256 Kbit capacity is needed and system VDD is stable ≥2.7 V-avoids dual-memory architecture.

Compared with AT24C256C-SSHL-T, CY15B256J-SXAT delivers 100,000× greater endurance and eliminates write latency, enabling robust event logging in safety-critical automotive systems; versus FM24V10-G, it offers broader voltage compatibility (2.0 V min) at lower density-ideal for compact, low-power modules where 32K × 8 suffices.

Availability

CY15B256J-SXAT is available at Aetrix Electronics and suitable for automotive telematics, powertrain control units, ADAS camera modules, and body electronics requiring stable component supply with AEC-Q100 qualification and long-term lifecycle support.

Supply support for CY15B256J-SXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on embedded memory and programmable systems.

The CY15B256J belongs to Cypress's automotive F-RAM product line, engineered specifically to replace serial EEPROM in safety-critical, high-write-frequency automotive subsystems while meeting AEC-Q100 stress test requirements.

FAQ

Is CY15B256J-SXAT pin-compatible with standard 8-pin SOIC EEPROMs like AT24C256?

Yes-CY15B256J-SXAT uses identical 8-pin SOIC footprint and I²C pin assignments (SDA, SCL, WP, VDD, VSS, A0–A2). No PCB redesign is needed for drop-in replacement; however, firmware must disable EEPROM polling routines since F-RAM writes complete instantly.

Does CY15B256J-SXAT support I²C Fast-mode Plus (1 MHz) or High-Speed Mode (3.4 MHz) per NXP specification?

It supports 3.4 MHz High-Speed Mode (Hs-mode) with master code handshake but does not meet NXP's Hs-mode VHYS specification. Per datasheet Rev. *I, DC electrical characteristics confirm operation up to 3.4 MHz in controlled environments, though system-level timing margin analysis is recommended for 3.4 MHz deployments.

How is write protection implemented, and can individual memory pages be locked?

Write protection is hardware-based and global: tying WP pin to VDD disables all write operations across the full 32K × 8 memory map. There is no software-configurable page-level locking-this simplifies safety certification but requires external logic if selective protection is needed.

What is the maximum supported I²C bus capacitance for reliable 400 kHz operation?

Per datasheet AC switching characteristics, total bus capacitance must not exceed 400 pF for guaranteed 400 kHz timing compliance. This includes PCB trace capacitance, MCU I/O pin capacitance, and other devices on the bus-designers should verify with oscilloscope rise/fall time measurements using the recommended RPmin/RPmax pull-up resistor formulas.

CY15B256J-SXAT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
I2C
Clock Frequency:
3.4 MHz
Write Cycle Time - Word, Page:
-
Access Time:
130 ns
Voltage - Supply:
2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

CY15B256J-SXAT FAQ

1.How can I place an order for CY15B256J-SXAT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY15B256J-SXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY15B256J-SXAT reliable?

The price and inventory of CY15B256J-SXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15B256J-SXAT is usually 5 days.

3.What payment methods are accepted for CY15B256J-SXAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15B256J-SXAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY15B256J-SXAT?

CY15B256J-SXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY15B256J-SXAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY15B256J-SXAT?

For technical support, including CY15B256J-SXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15B256J-SXAT requirements.

6.How does Aetrix verify that CY15B256J-SXAT is sourced from the original manufacturer or authorized distributors?

All CY15B256J-SXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15B256J-SXAT meets industry standards.

7.What is the process for return or replacement of CY15B256J-SXAT?

All CY15B256J-SXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY15B256J-SXAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY15B256J-SXAT part is unused and in its original packaging.

Return procedure for CY15B256J-SXAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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