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Infineon Technologies CY15E004J-SXET
- Part No.:
- CY15E004J-SXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
CY15E004J-SXET.pdf
- Description:
- IC FRAM 4KBIT I2C 3.4MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,959
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Product details
Overview
CY15E004J-SXET from Infineon Technologies (formerly Cypress) is a 4-Kbit (512 × 8) serial I²C ferroelectric RAM (F-RAM) designed for automotive nonvolatile data logging and control. It delivers NoDelay™ writes, 10¹³ read/write endurance, 121-year data retention at +125 °C, operates from 4.5–5.5 V, and meets AEC-Q100 Grade 1 (–40 °C to +125 °C).
For engineers reviewing the CY15E004J-SXET datasheet, CY15E004J-SXET pinout, CY15E004J-SXET application, or CY15E004J-SXET equivalent, this page provides verified functional context, validated I²C timing behavior, confirmed automotive-grade reliability metrics, and hardware-compatible alternatives for rapid EEPROM replacement in safety-critical systems.
Technical Context
The CY15E004J-SXET implements a true nonvolatile memory core using lead zirconate titanate (PZT) ferroelectric capacitors, enabling RAM-like write access without charge-pump circuitry. Its I²C interface supports 100 kHz, 400 kHz, and 1 MHz modes with full backward compatibility to legacy EEPROM timing.
It uses a 9-bit internal address space (8-bit word + 1-bit page select), with device addressing via two external pins (A1, A2) allowing up to four devices on one bus. Write protection is controlled by the WP pin, and all I/O pins include Schmitt-trigger inputs and slope-controlled outputs for noise immunity and EMI reduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Kbit (512 × 8); enables compact storage of calibration tables, fault logs, or configuration registers without external buffering. |
| Interface | I²C (2-wire serial); direct hardware drop-in for standard EEPROMs-no firmware or PCB changes required. |
| Write Endurance | 10¹³ cycles; supports >27,000 writes/second continuously for 10 years-eliminates wear-leveling firmware overhead. |
| Data Retention | 121 years at +125 °C; guarantees integrity across full automotive lifetime without refresh or backup power. |
| Operating Voltage | 4.5 V to 5.5 V; compatible with 5 V automotive microcontroller I/O domains and avoids level-shifting complexity. |
| Temperature Range | –40 °C to +125 °C (AEC-Q100 Grade 1); qualified for engine control units, transmission modules, and ADAS sensor nodes. |
| Active Current | 250 µA at 100 kHz; reduces system power budget during frequent logging in always-on vehicle subsystems. |
Pinout & Package
8-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads, RoHS-compliant, moisture sensitivity level (MSL) 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2 | Device Address Input | Selects one of up to four identical F-RAMs on shared I²C bus; pulled down internally-default address 0x50 when both grounded. |
| SDA | Bidirectional Data Line | Open-drain I²C data line with Schmitt trigger input and slope-controlled output; requires external pull-up resistor. |
| SCL | Clock Input | Master-generated I²C clock with Schmitt trigger input; defines timing for all read/write transfers. |
| WP | Hardware Write Protect | Active-high logic: tied to VDD locks entire memory map; tied to GND enables full write access. |
| VDD | Power Supply | 5 V nominal supply; must remain within 4.5–5.5 V to ensure valid operation and data retention guarantees. |
| VSS | Ground Reference | System ground return path; must be low-impedance and co-located with microcontroller ground for noise immunity. |
| NC | No Connect | Internally unconnected die pad; left floating or grounded per board layout best practices-no electrical function. |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ Writes | Zero-latency byte writes-data commits immediately after ACK; eliminates polling loops and prevents data loss during power failure. |
| Ferroelectric Core | Nonvolatile storage without charge pumps or high-voltage generators-reduces EMI, simplifies power design, and improves long-term reliability. |
| I²C Timing Compatibility | Supports 100/400 kHz legacy modes and 1 MHz high-speed mode-enables seamless migration from EEPROM without firmware rework. |
| AEC-Q100 Grade 1 Qualification | Validated for continuous operation at +125 °C ambient-meets functional safety requirements for ASIL-B–capable systems. |
| Low-Power Write Operation | Writes consume only 250 µA active current-avoids voltage droop and thermal stress during burst logging in battery-constrained modules. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Storing real-time engine knock sensor calibration offsets and misfire history across ignition cycles. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfacing directly to MCU's I²C peripheral; retains values during cranking-induced brownouts. Use Value: Enables deterministic sub-millisecond write latency and 10¹³-cycle durability-critical for adaptive learning algorithms requiring >100,000 updates/hour. | Use Scenario: Capturing timestamped radar object tracking metadata during autonomous emergency braking events. IC Role / Device Role / Timing Role: High-reliability event logger synchronized to CAN-triggered interrupts; stores pre-crash snapshots without CPU intervention. Use Value: Guarantees atomic write completion before next frame capture-prevents corruption during 10 ms power interruptions common in 12 V rail transients. |
| Electric Power Steering (EPS) | Body Control Module (BCM) |
Use Scenario: Recording torque sensor zero-point drift compensation values during vehicle startup and periodic self-test routines. IC Role / Device Role / Timing Role: Safety-critical parameter store accessed via I²C under ISO 26262 ASIL-B software partitioning. Use Value: Delivers 121-year retention at +125 °C-ensures calibration validity over full vehicle service life without recalibration campaigns. | Use Scenario: Maintaining door lock actuator cycle count, window position memory, and lighting fade profiles across sleep/wake transitions. IC Role / Device Role / Timing Role: Low-power nonvolatile register bank supporting ultra-low-quiescent-current (≤50 µA) standby operation. Use Value: Reduces average system current by 40 µA vs. EEPROM-extends battery life in key-off monitoring states beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT24C04C-SSHM-T (Microchip) | 4-Kbit I²C EEPROM; 1 million write cycles; 100-year retention at +85 °C; requires 5 ms write cycle time. | Limited to infrequent configuration storage; unsuitable for high-frequency logging due to polling and endurance constraints. | Choose only if cost sensitivity outweighs write performance and automotive temperature range requirements. |
| FM24V04-G (Cypress/Infineon) | 4-Kbit I²C F-RAM; identical architecture but rated for industrial (–40 °C to +85 °C), not automotive-E grade. | Not qualified for under-hood deployment; lacks AEC-Q100 Grade 1 validation and extended retention at +125 °C. | Select only for cabin or chassis modules operating below +85 °C ambient where qualification cost must be minimized. |
Compared with AT24C04C-SSHM-T and FM24V04-G, the CY15E004J-SXET uniquely combines automotive-grade temperature qualification, zero-write-latency operation, and 10¹³-cycle endurance-making it the sole option for safety-critical, high-write-frequency applications in engine bay or ADAS environments.
Availability
CY15E004J-SXET is available at Aetrix Electronics and suitable for engine control units, ADAS sensor nodes, electric power steering modules, and body control modules requiring stable component supply across multi-year automotive production programs.
Supply support for CY15E004J-SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with broad manufacturing scale and automotive qualification expertise.
The CY15E004J-SXET belongs to Infineon's F-RAM product line, engineered specifically for automotive applications demanding deterministic nonvolatile writes, extreme endurance, and guaranteed data integrity under harsh thermal and electrical conditions.
FAQ
Is CY15E004J-SXET pin-compatible with standard I²C EEPROMs like AT24C04?
Yes-CY15E004J-SXET uses an 8-pin SOIC package with identical pinout (VDD, VSS, SDA, SCL, WP, A1, A2, NC) and matches the I²C slave address structure (0x50–0x53) of AT24C04-series EEPROMs. No PCB redesign or firmware modification is needed for drop-in replacement.
Does CY15E004J-SXET require external high-voltage circuitry for writes?
No-unlike EEPROM, the CY15E004J-SXET uses ferroelectric storage cells that switch polarization states at standard VDD (4.5–5.5 V). It contains no charge pump or high-voltage generator, eliminating associated EMI, power spikes, and reliability risks.
How does the 121-year data retention specification apply in real-world automotive use?
The 121-year retention is measured at +125 °C per JEDEC JESD22-A117 and extrapolated using Arrhenius modeling. At typical under-hood temperatures (e.g., +85 °C), projected retention exceeds 1,000 years-ensuring data integrity over the full vehicle lifetime without refresh or backup power.
Can CY15E004J-SXET operate reliably during cold-cranking voltage drops?
Yes-the device maintains valid operation down to 4.5 V and features built-in power-on reset (POR) with hysteresis. During cranking events where battery voltage dips to 4.7 V for ≤100 ms, the F-RAM continues to accept and commit writes without corruption or latch-up.
CY15E004J-SXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Kbit
- Memory Organization:
- 512 x 8
- Memory Interface:
- I2C
- Clock Frequency:
- 3.4 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15E004J-SXET FAQ
1.How can I place an order for CY15E004J-SXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15E004J-SXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15E004J-SXET reliable?
The price and inventory of CY15E004J-SXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15E004J-SXET is usually 5 days.
3.What payment methods are accepted for CY15E004J-SXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15E004J-SXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15E004J-SXET?
CY15E004J-SXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15E004J-SXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15E004J-SXET?
For technical support, including CY15E004J-SXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15E004J-SXET requirements.
6.How does Aetrix verify that CY15E004J-SXET is sourced from the original manufacturer or authorized distributors?
All CY15E004J-SXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15E004J-SXET meets industry standards.
7.What is the process for return or replacement of CY15E004J-SXET?
All CY15E004J-SXET units undergo pre-shipment inspection (PSI). If there is an issue with CY15E004J-SXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15E004J-SXET part is unused and in its original packaging.
Return procedure for CY15E004J-SXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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