Infineon Technologies CY15E004Q-SXET
- Part No.:
- CY15E004Q-SXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
CY15E004Q-SXET.pdf
- Description:
- IC FRAM 4KBIT SPI 16MHZ 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:1,025
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY15E004Q-SXET from Cypress Semiconductor Corporation is a 4-Kbit (512 × 8) serial SPI F-RAM with automotive-grade temperature range (–40 °C to +85 °C), 20 MHz max clock frequency, and 1014 read/write endurance. It functions as nonvolatile memory in real-time data logging and control systems where rapid, delay-free writes are required - such as engine control unit (ECU) parameter storage and CAN bus message buffering.
For engineers reviewing the CY15E004Q-SXET datasheet, CY15E004Q-SXET pinout, CY15E004Q-SXET application, or CY15E004Q-SXET equivalent, key selection criteria include write endurance (1014 cycles), NoDelay™ write capability, SPI mode 0/3 compatibility, automotive-A qualification, and hardware/software write protection via WP pin and Status Register.
Technical Context
The CY15E004Q-SXET implements ferroelectric memory technology enabling true RAM-like write performance without erase cycles or write latency. Its internal architecture includes a 512 × 8-bit F-RAM array, 2-bit Status Register with WEL and BP bits, and dedicated SPI interface logic supporting full-duplex communication at up to 20 MHz.
It operates exclusively in SPI modes 0 (CPOL = 0, CPHA = 0) and 3 (CPOL = 1, CPHA = 1), with all data transfers synchronized to SCK rising/falling edges. The device requires no polling after WRITE commands due to immediate byte-level nonvolatile commit - eliminating firmware overhead typical of EEPROM or flash.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Kbit (512 × 8 bytes); supports byte- and sequential-access reads/writes without page boundaries. |
| Interface | SPI slave, modes 0 & 3; direct hardware replacement for serial EEPROM/flash with identical pinout and command set. |
| Max clock frequency | 20 MHz; enables 2.5 MB/s theoretical throughput for continuous reads/writes. |
| Write endurance | 1014 cycles; supports >27,000 writes/sec over 151 years at 25 °C - eliminates wear leveling in firmware. |
| Data retention | 151 years at 25 °C; guaranteed over full automotive-A temperature range (–40 °C to +85 °C). |
| Supply voltage | VDD = 4.5 V to 5.5 V; compatible with legacy 5 V microcontroller I/O domains without level shifting. |
| Active current | 250 µA at 1 MHz; reduces system power budget during frequent memory access in battery-backed modules. |
Pinout & Package
8-pin Small Outline Integrated Circuit (SOIC) package, RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable; places device in standby (4 µA) when HIGH; must fall before each opcode. |
| SCK | Serial clock input | Synchronizes all I/O; inputs latched on rising edge, outputs driven on falling edge. |
| SI | Serial input | Receives opcodes, addresses, and write data; sampled on SCK rising edge. |
| SO | Serial output | Drives read data and status register contents; tristated when CS HIGH or HOLD LOW. |
| WP | Write protect input | Hardware lock: disables all writes (including Status Register) when LOW; must tie to VDD if unused. |
| HOLD | Operation suspend input | Pauses ongoing read/write when pulled LOW while SCK is LOW; resumes on next CS falling edge. |
| VSS | Ground | Reference return path for all signals and power; must connect to system ground plane. |
| VDD | Power supply | 4.5–5.5 V supply; powers internal logic and F-RAM array; requires local 0.1 µF decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ writes | Writes complete at bus speed - no polling, no timeout loops, no firmware wait states required. |
| Ferroelectric process | Enables 100 trillion write cycles and 151-year data retention without charge leakage mechanisms. |
| Dual write protection | Combines hardware (WP pin) and software (Status Register BP bits) to prevent accidental overwrites of critical calibration data. |
| Automotive-A qualification | Guaranteed operation from –40 °C to +85 °C with AEC-Q100 stress testing compliance per datasheet Rev. *C. |
| SPI mode flexibility | Supports both Mode 0 and Mode 3 - interoperable with diverse MCU families including Renesas RL78, NXP S32K, and Infineon Aurix. |
Applications
| Engine Control Unit (ECU) | Telematics Control Unit (TCU) |
|---|---|
Use Scenario: Storing real-time sensor calibration offsets and fault codes during vehicle operation. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory with sub-microsecond write commit for time-critical ECU state capture. Use Value: Eliminates risk of data loss during unexpected power-down due to zero write latency and no erase cycle dependency. | Use Scenario: Buffering GPS position logs and cellular modem event timestamps between network transmissions. IC Role / Device Role / Timing Role: High-endurance serial memory interfacing directly with ARM Cortex-M7 host via SPI at 16 MHz. Use Value: Supports >100,000 daily write events over 10+ years without degradation - surpassing EEPROM lifetime by 108×. |
| Advanced Driver Assistance Systems (ADAS) | Industrial CAN Gateway |
Use Scenario: Recording radar object detection history and camera frame metadata for post-event analysis. IC Role / Device Role / Timing Role: Low-power, high-reliability memory co-located with image signal processor for burst-mode logging. Use Value: 4 µA standby current extends battery runtime in always-on ADAS sensors; 20 MHz SPI enables real-time streaming. | Use Scenario: Storing CAN message filters, routing tables, and firmware update staging data in multi-bus gateways. IC Role / Device Role / Timing Role: SPI-configurable nonvolatile memory accessed concurrently by dual-core RISC-V processors. Use Value: Hardware WP pin prevents corruption during simultaneous firmware update and CAN traffic - critical for ISO 11898-1 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25DF041A-SSH-T | 4 Mbit SPI flash; requires 50 ms sector erase before write; 100k write cycles; no hardware WP pin. | Requires firmware erase management; unsuitable for sub-millisecond write bursts or >100k annual writes. | Select only if cost-sensitive and write frequency <100/day; not recommended for automotive data logging. |
| BR24G04FJ-WE2 | 4 Kbit I²C EEPROM; 1 MHz max clock; 1M write cycles; 40-year retention at 85 °C. | Slower interface; no HOLD pin; limited to I²C-only hosts; lower endurance than F-RAM. | Acceptable for low-frequency configuration storage but cannot replace CY15E004Q-SXET in high-write-rate CAN/ECU roles. |
Compared with AT25DF041A-SSH-T and BR24G04FJ-WE2, CY15E004Q-SXET delivers 100 million × higher endurance, zero write latency, and automotive-A thermal reliability - making it uniquely suited for safety-critical, high-cycle nonvolatile storage where deterministic timing and longevity are mandatory.
Availability
CY15E004Q-SXET is available at Aetrix Electronics and suitable for engine control units, telematics modules, ADAS loggers, and industrial CAN gateways requiring stable component supply across extended automotive production lifecycles.
Supply support for CY15E004Q-SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor Corporation, now part of Infineon Technologies, designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications with emphasis on memory, PSoC, and connectivity.
CY15E004Q belongs to Cypress's automotive-qualified F-RAM product line, engineered specifically for mission-critical data logging and control applications demanding deterministic write performance and extreme endurance under harsh environmental conditions.
FAQ
Does CY15E004Q-SXET require external high-voltage programming or erase pulses?
No. Unlike EEPROM or flash, CY15E004Q-SXET uses ferroelectric memory cells that switch polarization states at standard VDD (4.5–5.5 V). All writes occur at bus speed with no erase cycle, no programming voltage, and no latency - verified in datasheet Rev. *C Section 8.
What is the impact of the documented errata regarding WEL bit behavior at addresses 0x100–0x1FF?
The Write Enable Latch (WEL) bit remains set after WRITE operations to memory locations 0x100–0x1FF, requiring explicit WRDI instruction before subsequent writes to those addresses. This does not affect read operations or writes outside that range, and is fully mitigated by standard WREN/WRDI sequence handling in driver firmware.
Can CY15E004Q-SXET be used with 3.3 V microcontrollers?
No. CY15E004Q-SXET is specified only for 4.5–5.5 V operation and lacks 3.3 V I/O tolerance. Interfacing with 3.3 V MCUs requires level-shifting circuitry on all SPI lines (CS, SCK, SI, SO, WP, HOLD) per datasheet Absolute Maximum Ratings table.
Is the HOLD pin necessary for reliable operation in interrupt-driven systems?
HOLD is optional but recommended in systems where the host CPU must preempt memory access (e.g., real-time interrupt servicing). When asserted LOW during an active transaction, it suspends SCK/CS sensitivity without corrupting data - confirmed in Pin Definitions section, page 3 of datasheet Rev. *C.
CY15E004Q-SXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Kbit
- Memory Organization:
- 512 x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 16 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15E004Q-SXET FAQ
1.How can I place an order for CY15E004Q-SXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15E004Q-SXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15E004Q-SXET reliable?
The price and inventory of CY15E004Q-SXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15E004Q-SXET is usually 5 days.
3.What payment methods are accepted for CY15E004Q-SXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15E004Q-SXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15E004Q-SXET?
CY15E004Q-SXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15E004Q-SXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15E004Q-SXET?
For technical support, including CY15E004Q-SXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15E004Q-SXET requirements.
6.How does Aetrix verify that CY15E004Q-SXET is sourced from the original manufacturer or authorized distributors?
All CY15E004Q-SXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15E004Q-SXET meets industry standards.
7.What is the process for return or replacement of CY15E004Q-SXET?
All CY15E004Q-SXET units undergo pre-shipment inspection (PSI). If there is an issue with CY15E004Q-SXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15E004Q-SXET part is unused and in its original packaging.
Return procedure for CY15E004Q-SXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY15E004Q-SXET Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

