Infineon Technologies CY15E016J-SXAT
- Part No.:
- CY15E016J-SXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
CY15E016J-SXAT.pdf
- Description:
- IC FRAM 16KBIT I2C 1MHZ 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:2,448
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Product details
Overview
CY15E016J-SXAT from Cypress Semiconductor is a 16-Kbit (2K × 8) automotive-grade serial F-RAM with I²C interface, operating from 4.5 V to 5.5 V over –40 °C to +85 °C. It delivers NoDelay™ writes, 1014 read/write endurance, and 151-year data retention-enabling reliable nonvolatile logging in engine control units, airbag controllers, and ADAS sensor nodes.
For engineers reviewing the CY15E016J-SXAT datasheet, CY15E016J-SXAT pinout, CY15E016J-SXAT application, or CY15E016J-SXAT equivalent, key selection criteria include write-cycle speed vs. EEPROM, I²C timing compatibility at 1 MHz, WP pin behavior for hardware write protection, and SOIC-8 thermal performance under automotive transient conditions.
Technical Context
The CY15E016J-SXAT implements a ferroelectric memory array with no internal charge-pump circuitry, enabling immediate byte-write completion without polling. Its I²C slave logic supports standard START/STOP, ACK/NACK, and 7-bit slave address (1010xxxR/W) with 3-bit page select.
It uses an 11-bit internal address counter (8-bit row + 3-bit segment), auto-incrementing on each byte transfer. Write operations complete within one I²C clock cycle after ACK-no delay between successive bytes-and retain data without power across full automotive temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 16 Kbit (2,048 × 8), directly addressable via 11-bit I²C word address |
| I²C speed | Up to 1 MHz - enables 10× faster write throughput than 100-kHz EEPROM |
| Write endurance | 100 trillion (10¹⁴) cycles - supports continuous logging at 100 Hz for >31 years |
| Data retention | 151 years at +85 °C - eliminates periodic refresh or backup power requirements |
| Supply voltage | 4.5 V to 5.5 V - compatible with 5-V automotive microcontroller I/O rails |
| Operating temp | –40 °C to +85 °C (Automotive-A grade) - qualified per AEC-Q100 Class 2 |
| Active current | 100 µA at 100 kHz - reduces system-level power budget in always-on modules |
Pinout & Package
Package: 8-pin Small Outline Integrated Circuit (SOIC), surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: WP | Write Protect input | Hardware-enforced write lock: tied to VDD disables all writes; tied to GND enables full memory access |
| 2: SCL | I²C clock input | Master-generated clock; rising edge samples SDA, falling edge outputs data - defines bus timing |
| 3: SDA | I²C bidirectional data line | Open-drain, Schmitt-triggered input with slope-controlled output - requires external pull-up resistor |
| 4: NC | No connect | Die pad not bonded - must remain unconnected to avoid parasitic coupling or ESD path |
| 5: NC | No connect | Die pad not bonded - floating; no routing or termination required |
| 6: VSS | Ground reference | Primary return path for I²C signaling and core logic - must be low-impedance connection to system GND |
| 7: VDD | Power supply | 5-V nominal supply; powers internal logic and I/O buffers - bypass capacitor required per layout guidelines |
| 8: NC | No connect | Die pad not bonded - electrically isolated; no PCB trace or solder mask opening needed |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ write | Byte writes complete synchronously with I²C ACK - zero wait states, no polling, deterministic latency |
| Ferroelectric process | Eliminates high-voltage charge pump - reduces write power by >95% vs. EEPROM and avoids wear-out mechanisms |
| I²C drop-in replacement | Pin- and protocol-compatible with 2K×8 serial EEPROMs - same SOIC-8 footprint and 1010xxxR/W slave address |
| Automotive-A qualification | Validated for engine bay and cabin modules - meets AEC-Q100 stress test requirements including HTOL and TC |
| Low standby current | 4 µA typical - enables battery-backed operation in sleep modes without compromising data integrity |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Storing real-time calibration offsets and fault codes during engine runtime. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfaced directly to MCU's I²C peripheral. Use Value: Enables sub-millisecond write bursts during misfire detection events without interrupting main control loop. |
Use Scenario: Capturing radar sensor fusion timestamps and lane-departure trigger history. IC Role / Device Role / Timing Role: High-endurance event logger synchronized to CAN message triggers. Use Value: Survives 1014 write cycles - supports continuous 100-Hz logging for vehicle lifetime without degradation. |
| Occupant Detection System | Telematics Control Unit (TCU) |
|
Use Scenario: Recording seatbelt usage patterns and airbag deployment readiness flags. IC Role / Device Role / Timing Role: Safety-critical status register with hardware write-protection via WP pin. Use Value: WP tied to ignition signal prevents accidental overwrites during power transitions - meets ISO 26262 ASIL-B requirements. |
Use Scenario: Storing cellular modem configuration, SIM authentication keys, and OTA update metadata. IC Role / Device Role / Timing Role: Secure boot-time configuration store accessed before main processor initialization. Use Value: 151-year data retention ensures keys remain valid across 15-year vehicle service life without refresh. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT24C16D-SSHM-T (Microchip) | 16-Kbit I²C EEPROM; 1M write cycles; 10 ms write time; 1.7–5.5 V operation | Lacks automotive temperature rating; requires software polling; higher write energy | Use where cost is primary constraint and write frequency < 1000×/day |
| FM24V10-G (Cypress) | 1-Mbit F-RAM; 3.0–3.6 V only; SPI interface; 1014 endurance; same retention | Higher density but incompatible voltage and interface; requires PCB redesign | Use when migrating to larger memory with SPI-based architecture and 3.3-V systems |
Compared with AT24C16D-SSHM-T, CY15E016J-SXAT eliminates write latency and extends endurance by 100 million×; compared with FM24V10-G, it retains 5-V compatibility and I²C simplicity while trading density for drop-in replaceability in legacy 5-V automotive designs.
Availability
CY15E016J-SXAT is available at Aetrix Electronics and suitable for engine control units, ADAS sensor nodes, and telematics control units requiring stable component supply across extended automotive production lifecycles.
Supply support for CY15E016J-SXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with focus on memory, PSoC, and connectivity.
CY15E016J belongs to Cypress's automotive F-RAM product line, engineered specifically to replace EEPROM in safety-critical, high-write-frequency automotive subsystems without compromising timing or reliability.
FAQ
Is CY15E016J-SXAT pin-compatible with standard 2K×8 I²C EEPROMs?
Yes. It uses an 8-pin SOIC package with identical pinout (WP, SCL, SDA, VSS, VDD, and three NC pins) and conforms to the industry-standard 7-bit I²C slave address format (1010xxxR/W). No PCB redesign is needed for drop-in replacement of devices like AT24C16 or CAT24C16.
Does the WP pin require an external pull-up or pull-down resistor?
No. The WP pin has an internal pull-down resistor. When left unconnected, it defaults to write-enabled mode. To enable hardware write protection, connect WP directly to VDD - no external resistor is required or recommended.
What is the maximum sustained write rate achievable with CY15E016J-SXAT?
At 1 MHz I²C clock, the device supports up to 100 kbytes/s sequential write throughput. Each byte completes in ≤10 µs (including ACK), enabling burst writes of 256-byte pages without inter-byte delay - significantly exceeding EEPROM's 10-ms/page limit.
How does data retention behave at temperatures below –40 °C?
Data retention is specified for –40 °C to +85 °C per AEC-Q100. At –40 °C, retention exceeds 151 years; at lower temperatures (e.g., –55 °C), retention increases further due to reduced ferroelectric domain relaxation - though this is not formally characterized in the datasheet.
CY15E016J-SXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- I2C
- Clock Frequency:
- 1 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15E016J-SXAT FAQ
1.How can I place an order for CY15E016J-SXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15E016J-SXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15E016J-SXAT reliable?
The price and inventory of CY15E016J-SXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15E016J-SXAT is usually 5 days.
3.What payment methods are accepted for CY15E016J-SXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15E016J-SXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15E016J-SXAT?
CY15E016J-SXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15E016J-SXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15E016J-SXAT?
For technical support, including CY15E016J-SXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15E016J-SXAT requirements.
6.How does Aetrix verify that CY15E016J-SXAT is sourced from the original manufacturer or authorized distributors?
All CY15E016J-SXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15E016J-SXAT meets industry standards.
7.What is the process for return or replacement of CY15E016J-SXAT?
All CY15E016J-SXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY15E016J-SXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15E016J-SXAT part is unused and in its original packaging.
Return procedure for CY15E016J-SXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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