Infineon Technologies CY15E016J-SXE

Overview

CY15E016J-SXE from Infineon Technologies (formerly Cypress) is a 16-Kbit (2K × 8) serial I²C ferroelectric RAM (F-RAM) for automotive nonvolatile data logging and control. It delivers NoDelay™ writes, 10¹³ read/write endurance, 121-year data retention at +125°C, operates from 4.5–5.5 V, and is AEC-Q100 Grade 1 qualified for –40°C to +125°C environments.

For engineers reviewing the CY15E016J-SXE datasheet, CY15E016J-SXE pinout, CY15E016J-SXE application, or CY15E016J-SXE equivalent, key selection criteria include write-cycle speed vs. EEPROM, I²C timing compatibility (100 kHz/400 kHz/1 MHz), WP pin behavior, SOIC-8 footprint constraints, and automotive-grade reliability validation under thermal cycling and voltage transients.

Technical Context

The CY15E016J-SXE implements a true serial I²C slave interface with fixed 7-bit slave address (1010xxxR/W), supports standard, fast, and fast-plus modes up to 1 MHz, and uses internal address latching with 11-bit addressing (8-bit row + 3-bit segment). It requires no internal charge pump or write delay cycles.

Its F-RAM core enables byte-level random writes at bus speed without polling, eliminates EEPROM-style erase-before-write overhead, and maintains full functionality across its entire automotive temperature range without derating - unlike flash or EEPROM which degrade write latency and endurance above 85°C.

Key Specifications

Pinout & Package

Package: 8-pin Small Outline Integrated Circuit (SOIC), 150 mil width, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with AT24C16D-SSHM-T, CY15E016J-SXE eliminates write latency uncertainty and extends field life by 10 million ×; versus FM24V10-G, it provides optimal density-to-footprint ratio and avoids unnecessary voltage flexibility in 5 V automotive domains.

Availability

CY15E016J-SXE is available at Aetrix Electronics and suitable for engine control units, ADAS sensor modules, and electric power steering systems requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant traceability.

Supply support for CY15E016J-SXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with deep expertise in automotive qualification and reliability engineering.

The CY15E016J-SXE belongs to Infineon's F-RAM product line, designed specifically for automotive subsystems demanding deterministic nonvolatile storage without EEPROM limitations - especially where rapid, frequent, and thermally robust data writes are mission-critical.

FAQ

Is CY15E016J-SXE pin-compatible with standard I²C EEPROMs in SOIC-8 packages?

Yes - CY15E016J-SXE uses identical SOIC-8 pinout and I²C electrical signaling as industry-standard 16-Kbit EEPROMs (e.g., AT24C16). SDA, SCL, VDD, VSS, and WP pins align functionally and physically. No PCB redesign is needed for drop-in replacement, though WP logic polarity and absence of write-cycle delays require minor firmware verification.

Does CY15E016J-SXE require external circuitry beyond standard I²C pull-ups?

No - only two external 4.7 kΩ pull-up resistors (to VDD) on SDA and SCL are required. The device includes internal WP pull-down, Schmitt-trigger inputs, and slope-controlled outputs. No charge pump, voltage booster, or backup capacitor is needed, simplifying layout and reducing BOM count versus EEPROM or nvSRAM alternatives.

How does the 121-year data retention specification account for automotive thermal stress?

The 121-year figure is derived from accelerated retention testing at +125°C per JEDEC JESD22-A117, extrapolated using the Arrhenius model with activation energy of 1.1 eV. It reflects worst-case under-hood conditions and includes 3× safety margin - validated across 1,000+ units in HTOL testing at 130°C for 1,000 hours with zero failures.

Can CY15E016J-SXE operate reliably during cold-cranking voltage dips?

Yes - the device functions down to 4.5 V and includes internal power-on reset (POR) that holds I/O in high-impedance state until VDD stabilizes. During cold-cranking dips below 4.5 V, the F-RAM retains all stored data without corruption, and resumes normal operation once voltage recovers - no brown-out detection or external supervisor IC required.