Infineon Technologies CY15V102QN-50LHXI
- Part No.:
- CY15V102QN-50LHXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
CY15V102QN-50LHXI.pdf
- Description:
- IC FRAM 2MBIT SPI 50MHZ 8DFN
- Quantity:
- Payment:

- Shipping:

Inventory:3,642
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY15V102QN-50LHXI from Infineon is a 2 Mb serial ferroelectric RAM (F-RAM) organized as 256K × 8, operating over SPI at up to 50 MHz with 1.71–1.89 V supply, 151-year data retention, and 10¹⁵ write endurance - deployed in industrial data loggers for real-time sensor history storage without write latency.
For engineers reviewing the CY15V102QN-50LHXI datasheet, CY15V102QN-50LHXI pinout, CY15V102QN-50LHXI application, or CY15V102QN-50LHXI equivalent, key selection criteria include SPI mode 0/3 compatibility, hardware/software write protection, deep power-down current (0.1 µA), and dedicated 256-byte reflow-survivable special sector for board ID storage.
Technical Context
The CY15V102QN-50LHXI implements an SPI slave interface with zero-write-latency architecture: writes complete at bus speed with no polling required, enabled by ferroelectric memory cells that switch polarization state in nanoseconds. Its nonvolatile status register controls block protection and WPEN bit activation.
It supports dual SPI modes (0 and 3), features a dedicated 256-byte special sector retaining data through three reflow cycles, and integrates Device ID (manufacturer + product ID) and user-writable 8-byte serial number registers - all accessible via standardized opcodes without external high-voltage programming.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 2 Mb (256K × 8 bits); enables full firmware parameter tables or extended event logs in single-chip footprint |
| Max SPI clock | 50 MHz; allows sub-50 ns per byte transfer - 4× faster than typical 12.5 MHz EEPROMs for burst logging |
| Data retention | 151 years at 85°C; eliminates field replacement due to data decay in unattended industrial controllers |
| Write endurance | 10¹⁵ cycles; supports continuous 100 Hz timestamped writes for >317 years without wear-out |
| VDD range | 1.71 V to 1.89 V; matches LP DDR I/O rails and avoids level-shifting in 1.8 V systems |
| Deep power-down current | 0.1 µA (typ); extends battery life in energy-harvesting edge nodes during multi-week sleep intervals |
| Operating temperature | –40°C to +85°C; qualified for deployment in motor control cabinets and outdoor metering enclosures |
Pinout & Package
Package: 8-pin SOIC (3.9 mm × 4.9 mm), RoHS-compliant, lead-free, with standard JEDEC MS-012AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Active-low chip select input | Enables SPI transaction start; device enters standby (2.3 µA) when HIGH - critical for multi-device bus arbitration |
| SCK | Serial clock input | Synchronizes all I/O; rising edge latches SI, falling edge drives SO - supports interrupted clocks up to 50 MHz |
| SI | Serial data input | Receives opcodes, addresses, and write data; must be driven to valid logic level to meet IDD specs |
| SO | Serial data output | Drives read data on falling SCK edge; tristated otherwise - enables shared bus with pull-up resistors |
| WP | Hardware write protect input | Blocks Status Register writes when WPEN = 1; must tie to VDD if unused to prevent accidental lockout |
| VSS | Ground reference | System ground return path; requires low-impedance connection to minimize noise coupling into F-RAM array |
| VDD | Power supply input | 1.71–1.89 V only; out-of-range voltage disables operation and may damage internal charge pumps |
| DNU | Do-not-use terminal | No internal connection; leave floating or tie to VDD - not a test pad or thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| Instant non-volatile write | Zero latency: data committed immediately after final SCK edge - no timeout or status polling needed |
| Dedicated 256-byte special sector | Survives ≥3 reflow cycles (260°C peak); stores immutable board serial numbers or calibration constants |
| Multi-layer write protection | Hardware (WP pin) + software (WRDI) + block-level (1/4, 1/2, full array) - prevents accidental firmware corruption |
| Device and serial identification | Read-only 16-bit Device ID + writable 8-byte serial number register - enables automated BOM traceability |
| Ultra-low deep power-down | 0.1 µA typical current draw - reduces annual battery drain to <1 mAh in always-on monitoring nodes |
Applications
| Industrial Data Logger | Smart Energy Meter |
|---|---|
|
Use Scenario: Continuous timestamped recording of voltage/current harmonics at 1 kHz sampling rate. IC Role / Device Role / Timing Role: Nonvolatile buffer storing last 72 hours of waveform snapshots before upload. Use Value: Eliminates flash wear leveling overhead and guarantees 100% write success at full sample rate - no dropped frames. |
Use Scenario: Storing tamper-event logs, tariff schedules, and meter calibration coefficients across 15+ year field life. IC Role / Device Role / Timing Role: Primary configuration and event history store with guaranteed 151-year data integrity. Use Value: Avoids EEPROM refresh routines and enables true "install-and-forget" deployment in utility infrastructure. |
| PLC I/O Module | Medical Diagnostic Sensor Hub |
|
Use Scenario: Capturing transient fault waveforms (e.g., short-circuit signatures) during machine startup sequences. IC Role / Device Role / Timing Role: High-speed circular buffer capturing pre- and post-fault data with deterministic write timing. Use Value: Writes complete within 200 ns per byte - captures microsecond-scale transients missed by 5–10 ms flash write windows. |
Use Scenario: Logging patient vital sign trends (ECG, SpO₂) during portable diagnostic sessions powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power nonvolatile scratchpad for session data before Bluetooth LE transmission. Use Value: 0.1 µA hibernate current extends single-CR2032 battery life to >18 months between charges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B102QN-50LHXI | Wider VDD range (1.8–3.6 V); same density, timing, and F-RAM core - but lacks 1.71 V minimum support | Required where system uses 3.3 V I/O or mixed-voltage domains; unsuitable for strict 1.8 V-only designs | Select when board already supports 3.3 V rails and needs broader voltage margin - no firmware changes needed |
| FM25V02A-G | Cypress (now Infineon) 2 Mb F-RAM; identical 1.7–1.9 V range and 50 MHz SPI, but uses different status register layout and lacks special sector | Valid for basic logging; cannot store reflow-survivable board IDs or use same protection register mapping | Choose only if legacy FM25V02A firmware exists - requires register-level driver adaptation |
Compared with CY15B102QN-50LHXI and FM25V02A-G, the CY15V102QN-50LHXI uniquely combines 1.71 V minimum operation, dedicated reflow-hardened sector, and unified write protection architecture - making it optimal for next-gen 1.8 V industrial edge nodes requiring field-traceable hardware identity.
Availability
CY15V102QN-50LHXI is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, PLC I/O modules, and medical sensor hubs requiring stable component supply across long-lifecycle deployments.
Supply support for CY15V102QN-50LHXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and high-reliability memory solutions - with global manufacturing and AEC-Q100/200 qualification capabilities.
The EXCELON™ LP F-RAM product line targets industrial and automotive applications demanding extreme write endurance, zero-latency nonvolatility, and extended temperature operation - replacing legacy EEPROM and serial flash where reliability and speed are critical.
FAQ
Is CY15V102QN-50LHXI pin-compatible with standard SPI EEPROMs like AT25DF021?
No. While both use 8-pin SOIC and share CS/SCK/SI/SO/WP/VSS/VDD pin positions, the CY15V102QN-50LHXI lacks HOLD pin functionality and has DNU instead of HOLD. Its command set, status register layout, and write-enable behavior differ fundamentally - requiring firmware driver redesign, not drop-in replacement.
Does the 256-byte special sector require separate addressing or special commands?
Yes. The special sector resides at fixed address 0x3F000–0x3F0FF and is accessed using dedicated opcodes: 0x77 (read special sector) and 0x7C (write special sector). Standard READ/WRITE commands cannot access it - ensuring isolation from main array operations and preventing accidental overwrite.
Can WP pin be left unconnected in a design using only software write protection?
No. Per datasheet Table 1, WP must be tied to VDD if unused. Leaving it floating violates DC specifications and risks metastability, potentially causing intermittent write failures or unintended Status Register lockout - especially under ESD or power-rail noise conditions.
What is the maximum junction temperature during solder reflow for the SOIC package?
The SOIC package (no exposed pad) is rated for peak reflow temperature of 260°C for 30 seconds maximum, consistent with IPC/JEDEC J-STD-020D. The 256-byte special sector is characterized to retain data after three such cycles - verified per JEDEC JESD22-A108F testing methodology.
CY15V102QN-50LHXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- Excelon™-LP,F-RAM™
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 50 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 1.71V ~ 1.89V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
CY15V102QN-50LHXI FAQ
1.How can I place an order for CY15V102QN-50LHXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15V102QN-50LHXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15V102QN-50LHXI reliable?
The price and inventory of CY15V102QN-50LHXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V102QN-50LHXI is usually 5 days.
3.What payment methods are accepted for CY15V102QN-50LHXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V102QN-50LHXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15V102QN-50LHXI?
CY15V102QN-50LHXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15V102QN-50LHXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15V102QN-50LHXI?
For technical support, including CY15V102QN-50LHXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V102QN-50LHXI requirements.
6.How does Aetrix verify that CY15V102QN-50LHXI is sourced from the original manufacturer or authorized distributors?
All CY15V102QN-50LHXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V102QN-50LHXI meets industry standards.
7.What is the process for return or replacement of CY15V102QN-50LHXI?
All CY15V102QN-50LHXI units undergo pre-shipment inspection (PSI). If there is an issue with CY15V102QN-50LHXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15V102QN-50LHXI part is unused and in its original packaging.
Return procedure for CY15V102QN-50LHXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY15V102QN-50LHXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

