Infineon Technologies CY15V102QN-50SXI

Overview

CY15V102QN-50SXI from Infineon is a 2 Mb serial ferroelectric RAM (F-RAM) organized as 256K × 8, operating over SPI at up to 50 MHz with 1.71–1.89 V supply, 10¹⁵ write endurance, and 151-year data retention. It serves as a nonvolatile memory replacement for EEPROM/flash in real-time data logging and industrial control systems requiring instant writes without polling.

For engineers reviewing the CY15V102QN-50SXI datasheet, CY15V102QN-50SXI pinout, CY15V102QN-50SXI application, or CY15V102QN-50SXI equivalent, key selection factors include its 50 MHz SPI interface timing, hardware/software write protection scheme, dedicated 256-byte special sector, low deep power-down current (0.70 µA), and industrial temperature range (–40°C to +85°C).

Technical Context

The CY15V102QN-50SXI implements an SPI slave interface compliant with Modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), supporting full-duplex communication with SI/SO pins and chip-select–driven activation. Its internal architecture integrates a 256K × 8 F-RAM array, nonvolatile status register, device ID/serial number registers, and a dedicated 256-byte special sector tolerant of three reflow cycles.

Write operations execute at bus speed with zero latency-no write cycle delay or status polling required-enabling deterministic timing for high-frequency data capture. The device uses ferroelectric storage cells enabling 10¹⁵ read/write cycles and eliminating wear leveling or erase-before-write overhead inherent in flash and EEPROM.

Key Specifications

Pinout & Package

Package: 8-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, surface-mountable with standard 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B102QN-50SXI, the CY15V102QN offers superior voltage efficiency for 1.8 V systems but less flexibility across mixed-rail designs; versus AT25DF021A, it delivers 10¹⁰× higher endurance and eliminates write delays entirely-making it the sole viable choice for deterministic, high-frequency nonvolatile storage.

Availability

CY15V102QN-50SXI is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and automotive body control modules requiring stable component supply, long-life data retention, and zero-latency nonvolatile writes.

Supply support for CY15V102QN-50SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line targets applications demanding reliable, high-endurance, low-power nonvolatile memory-specifically replacing legacy EEPROM and flash where write speed, longevity, and deterministic timing are critical.

FAQ

Is CY15V102QN-50SXI pin-compatible with CY15B102QN-50SXI?

Yes-both share identical 8-pin SOIC packaging, pin assignments, SPI command set, memory map, and timing specifications. The only difference is the VDD operating range: CY15V102QN supports 1.71–1.89 V, while CY15B102QN supports 1.8–3.6 V. No PCB redesign is needed when substituting within the overlapping 1.8–1.89 V window.

Does the CY15V102QN-50SXI require external pull-up resistors on SI, SO, or WP pins?

WP must be pulled up to VDD if unused, per datasheet requirement. SI and SO do not require external pull-ups-the device internally manages signal integrity during SPI transactions. However, a 10 kΩ pull-up on WP is recommended for noise immunity in electrically noisy industrial environments.

Can the dedicated 256-byte special sector be used for firmware storage?

No-the special sector is intended for calibration data, serial numbers, or board IDs that must survive reflow soldering. It is not executable memory and lacks features like error correction or secure boot support. Firmware should reside in the main 256K × 8 array, which supports full read/write/erase-equivalent operations via standard SPI commands.

What is the maximum sustained write throughput achievable with CY15V102QN-50SXI at 50 MHz SPI?

At 50 MHz with 8-bit opcode + 24-bit address + 8-bit data per byte, each write transaction takes ~80 ns minimum. Accounting for CS assertion/deassertion and inter-byte gaps, sustained throughput reaches ~4.8 MB/s for sequential writes-limited only by host controller SPI peripheral performance, not device latency.