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Infineon Technologies CY15V104QI-20BFXIT
- Part No.:
- CY15V104QI-20BFXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-UFLGA
- Datasheet:
-
CY15V104QI-20BFXIT.pdf
- Description:
- IC FRAM 4MBIT SPI 8UFLGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,971
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Product details
Overview
CY15V104QI-20BFXIT from Infineon is a 4-Mbit serial ferroelectric RAM (F-RAM) organized as 512K × 8, operating at 1.71–1.89 V with SPI interface up to 20 MHz, 10¹⁵ write endurance, and 151-year data retention-deployed in industrial sensor logging and real-time metering where rapid nonvolatile writes are critical.
For engineers reviewing the CY15V104QI-20BFXIT datasheet, CY15V104QI-20BFXIT pinout, CY15V104QI-20BFXIT application, or CY15V104QI-20BFXIT equivalent, key selection factors include guaranteed zero-write-delay operation, inrush current control during power-up, dedicated 256-byte reflow-survivable special sector, and hardware/software write protection for mission-critical data integrity.
Technical Context
The CY15V104QI-20BFXIT implements an SPI slave interface compliant with modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), supporting full-duplex byte-level read/write without polling. Its internal F-RAM array eliminates erase cycles and enables immediate byte-write completion synchronized to SCK falling edge.
It integrates a nonvolatile status register with WPEN bit, device ID/serial number registers, and a dedicated 256-byte special sector validated for survival across three standard reflow soldering cycles (JEDEC J-STD-020). Power management includes deep power-down (0.70 µA) and hibernate (0.1 µA) modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8), enabling compact firmware parameter storage without external EEPROM replacement |
| Interface Speed | Up to 20 MHz SPI clock, permitting 2.5 MB/s sustained write throughput with no wait states |
| Write Endurance | 10¹⁵ read/write cycles-supports continuous logging at 1 kHz for >31,700 years without wear-out |
| Data Retention | 151 years at +85°C, eliminating periodic refresh or backup power requirements |
| Supply Voltage | 1.71 V to 1.89 V, compatible with 1.8 V logic domains and low-power microcontroller I/O |
| Operating Temp | –40°C to +85°C industrial grade, qualified for deployment in outdoor utility meters and factory automation nodes |
| Inrush Current | 1.5 mA typical at power-up, mitigating voltage droop in battery-backed or energy-harvesting systems |
Pinout & Package
8-pin ultra-thin fine-pitch land grid array (UFLGA) package, 2.0 mm × 2.5 mm × 0.5 mm, RoHS-compliant, optimized for space-constrained industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select Input | Active-low enable; places device in standby (2.3 µA) when HIGH, synchronizes all opcodes on falling edge |
| SCK | Serial Clock Input | Drives all timing; inputs latched on rising edge, SO data driven on falling edge; supports 0–20 MHz with interruptible clock |
| SI | Serial Data Input | Accepts opcodes, addresses, and write data; must be held valid to meet IDD specs; supports shared SI/SO via single-wire mode |
| SO | Serial Data Output | Drives read data only; tristated otherwise; transitions aligned to SCK falling edge for deterministic sampling |
| WP | Write Protect Input | Hardware lock for status register when WPEN=1; must tie to VDD if unused to prevent accidental protection |
| VDD | Power Supply | 1.71–1.89 V input; powers core logic and F-RAM array; decoupling required per datasheet layout guidelines |
| VSS | Ground | Reference return path; requires low-impedance connection to system ground plane |
| DNU | Do Not Use | No internal connection; must float or tie to VDD-no routing or PCB pad recommended |
Key Features
| Feature | Design Value |
|---|---|
| Instant Nonvolatile Write | Zero latency write completion-data committed at bus speed without polling or delay, enabling deterministic real-time logging |
| Dedicated Reflow-Survivable Sector | 256-byte special sector retains data through three JEDEC J-STD-020 reflow cycles, ideal for storing calibration or board-unique IDs |
| Multi-Layer Write Protection | Hardware (WP pin) + software (WRDI instruction) + block-level (1/4, 1/2, full array) protection prevents unintended overwrites in field-deployed systems |
| Unique Device Identification | Factory-programmed 64-bit unique ID + 8-byte user-writable serial number register for secure device authentication and traceability |
| Ultra-Low Deep Power-Down | 0.70 µA typical current draw in deep power-down mode, extending battery life in always-on sensor endpoints beyond 10 years |
Applications
| Smart Energy Metering | Industrial PLC Data Logging |
|---|---|
Use Scenario: Continuous timestamped energy consumption recording at 1-second intervals under fluctuating grid conditions. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory for burst-write buffering before SD card upload; retains last 72 hours of data during brownout. Use Value: Eliminates flash wear leveling overhead and guarantees write success even during 10 ms power interruptions-no data loss across 100+ million cycles. | Use Scenario: Storing machine state snapshots and fault event logs in modular I/O controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Primary configuration and runtime history store; accessed via SPI by ARM Cortex-M7 host with deterministic <1 µs write latency. Use Value: Enables 100% reliable logging at 10 kHz sample rates without DMA stalls or flash erase delays-critical for predictive maintenance analytics. |
| Medical Diagnostic Sensor Hub | Automotive Telematics Black Box |
Use Scenario: Capturing high-resolution ECG waveform segments triggered by arrhythmia detection algorithms in portable monitors. IC Role / Device Role / Timing Role: Low-power, radiation-tolerant buffer memory interfaced directly to ADC output; powered from coin cell during main power failure. Use Value: Survives 151 years of data retention at body temperature (37°C), meets IEC 60601-1 leakage current limits via 0.1 µA hibernate mode. | Use Scenario: Recording vehicle CAN bus diagnostics, GPS coordinates, and accelerometer triggers during crash events in ADAS ECUs. IC Role / Device Role / Timing Role: Crash-activated nonvolatile memory; writes final 5 seconds of pre-impact data within 100 ns of impact detection signal. Use Value: Guarantees atomic write of critical forensic data-even during simultaneous 12 V supply collapse and airbag deployment noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile serial memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QI-20BFXIT | Wider VDD range (1.8–3.6 V); lacks inrush current control circuitry; identical pinout and command set | Suitable for mixed-voltage systems but not for strict 1.8 V-only designs requiring controlled power-up surge | Select when board uses 3.3 V I/O or requires backward compatibility with legacy 3 V F-RAM footprints |
| MB85RS4MT-FPN-G-JNE1 | Fujitsu 4-Mbit FRAM; 1.8–3.6 V; 15 MHz max SPI; no dedicated reflow-survivable sector or unique ID register | Lacks hardware write protect pin and serial number programmability-requires external logic for secure provisioning | Choose for cost-sensitive consumer applications where reflow survivability and device identity are non-critical |
Compared with CY15B104QI-20BFXIT and MB85RS4MT-FPN-G-JNE1, the CY15V104QI-20BFXIT uniquely delivers 1.71–1.89 V operation with integrated inrush control and a certified reflow-hardened sector-making it the only option for next-gen 1.8 V industrial edge nodes demanding zero-compromise data integrity.
Availability
CY15V104QI-20BFXIT is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical sensor hubs, and automotive telematics black boxes requiring stable component supply across extended product lifecycles.
Supply support for CY15V104QI-20BFXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and nonvolatile memory solutions for industrial, automotive, and IoT applications.
The EXCELON™ LP F-RAM product line targets high-reliability, low-power embedded systems requiring instant-write nonvolatility-designed specifically to replace serial flash and EEPROM in write-intensive, long-lifecycle deployments.
FAQ
Is CY15V104QI-20BFXIT pin-compatible with CY15B104QI-20BFXIT?
Yes-both share identical 8-pin UFLGA footprint, pin assignments, and SPI command set. However, CY15V104QI-20BFXIT operates strictly at 1.71–1.89 V and includes inrush current control circuitry absent in the CY15B variant, requiring voltage rail validation before substitution.
Does the 256-byte special sector require separate addressing or commands?
No-the special sector is accessed using standard READ/WRITE opcodes with address range 0x7F000–0x7F0FF. It behaves identically to main array memory but is physically constructed to withstand three JEDEC J-STD-020 reflow cycles without data corruption.
Can the unique device ID be overwritten or disabled?
No-the 64-bit unique ID is factory-laser-programmed into ROM and is read-only. The 8-byte serial number register is user-writable via WRSR and WRNS commands but cannot modify the immutable unique ID, ensuring cryptographic binding to hardware identity.
What happens during power loss mid-write to the main array?
Because F-RAM writes are inherently nonvolatile and complete within one SPI clock cycle, any byte successfully shifted into the device before power loss is fully retained. No partial writes or corruption occur-unlike flash or EEPROM, which risk page-level corruption during interruption.
CY15V104QI-20BFXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-UFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 20 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.71V ~ 1.89V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UFLGA (3.28x3.23)
CY15V104QI-20BFXIT FAQ
1.How can I place an order for CY15V104QI-20BFXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15V104QI-20BFXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15V104QI-20BFXIT reliable?
The price and inventory of CY15V104QI-20BFXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V104QI-20BFXIT is usually 5 days.
3.What payment methods are accepted for CY15V104QI-20BFXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V104QI-20BFXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15V104QI-20BFXIT?
CY15V104QI-20BFXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15V104QI-20BFXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15V104QI-20BFXIT?
For technical support, including CY15V104QI-20BFXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V104QI-20BFXIT requirements.
6.How does Aetrix verify that CY15V104QI-20BFXIT is sourced from the original manufacturer or authorized distributors?
All CY15V104QI-20BFXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V104QI-20BFXIT meets industry standards.
7.What is the process for return or replacement of CY15V104QI-20BFXIT?
All CY15V104QI-20BFXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY15V104QI-20BFXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15V104QI-20BFXIT part is unused and in its original packaging.
Return procedure for CY15V104QI-20BFXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY15V104QI-20BFXIT Tags
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M24C02-WMN6TP
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STMicroelectronics
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