Infineon Technologies CY15V104QN-20LPXIT

Overview

CY15V104QN-20LPXIT from Infineon is a 4-Mb serial ferroelectric RAM (F-RAM) organized as 512K × 8, operating at 1.71–1.89 V with industrial temperature range (–40°C to +85°C), 50 MHz SPI interface, and 10¹⁵ write endurance - deployed in real-time data logging systems where millisecond-level nonvolatile writes prevent loss during power interruption.

For engineers reviewing the CY15V104QN-20LPXIT datasheet, CY15V104QN-20LPXIT pinout, CY15V104QN-20LPXIT application, or CY15V104QN-20LPXIT equivalent, key selection criteria include guaranteed 151-year data retention, zero-write-delay SPI operation, hardware/software write protection, and compatibility with legacy SPI EEPROM/flash footprints in industrial control and metering designs.

Technical Context

The CY15V104QN-20LPXIT implements an SPI slave interface compliant with modes 0 and 3, supporting up to 50 MHz clock frequency with no internal write latency - all writes complete within the same SPI transaction cycle. Its memory architecture uses a dedicated 256-byte special sector that survives three reflow cycles, and integrates nonvolatile Device ID, Unique ID, and user-writable 8-byte serial number registers.

Write protection is enforced via dual-layer control: hardware-level WP pin assertion (active-low) combined with software-configurable status register bits (WPEN, BP0–BP2), enabling selective locking of 1/4, 1/2, or full array. Power management includes deep power-down (0.70 µA typ) and hibernate (0.1 µA typ) modes, activated via SPI command without external circuitry.

Key Specifications

Pinout & Package

8-pin SOIC package (3.9 mm × 4.9 mm, 1.27 mm pitch), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile serial memory applications.

Compared with CY15B104QN-20LPXIT, the CY15V104QN-20LPXIT offers tighter voltage optimization for ultra-low-power 1.8 V domains, while AT45DB041E demands significant firmware adaptation and sacrifices >10¹⁰× endurance - making CY15V104QN the sole choice for deterministic, high-cycle, zero-latency nonvolatile storage.

Availability

CY15V104QN-20LPXIT is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and automotive body control modules requiring stable component supply, guaranteed 151-year data retention, and zero-write-delay nonvolatile memory.

Supply support for CY15V104QN-20LPXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line delivers instant-write, high-endurance nonvolatile memory optimized for real-time data capture in resource-constrained embedded systems where flash and EEPROM fail under frequent write stress.

FAQ

Is CY15V104QN-20LPXIT pin-compatible with standard SPI EEPROMs like AT25DF041A?

Yes - it uses identical 8-pin SOIC footprint and SPI command set (Read, Write, WREN, WRDI, RDSR), enabling direct PCB-level replacement without layout changes. However, write timing differs fundamentally: CY15V104QN completes writes instantly, eliminating the need for status polling or timeout loops required by EEPROMs.

Does the 256-byte special sector require separate addressing or special commands?

Yes - it uses dedicated opcodes (0x77 for read, 0x76 for write) and occupies address range 0x7F000–0x7F0FF. Unlike main array access, special sector reads/writes do not require Write Enable (WREN) first, and its contents survive three Pb-free reflow cycles due to hardened ferroelectric layer design.

Can the WP pin be left unconnected in designs without hardware write protection?

No - per datasheet Section 2, WP must be tied to VDD if unused. Leaving it floating violates DC specifications and may cause unpredictable status register write blocking. This requirement ensures deterministic behavior during power-up and prevents inadvertent lockout of configuration updates.

What is the maximum junction temperature during reflow for the SOIC package?

The SOIC package is qualified for standard Pb-free reflow per JEDEC J-STD-020, with peak temperature of 260°C for ≤40 seconds. The 256-byte special sector is specifically characterized to retain data across three such cycles - confirmed in datasheet Section 14.1 and Table 12.