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Infineon Technologies CY15V104QN50BFXITXUMA1
- Part No.:
- CY15V104QN50BFXITXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-UFLGA
- Datasheet:
-
CY15V104QN50BFXITXUMA1.pdf
- Description:
- IC FRAM 4MBIT SPI 8UFLGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
CY15V104QN50BFXITXUMA1 from Infineon is a 4-Mb serial ferroelectric RAM (F-RAM) organized as 512K × 8, operating on SPI interface at up to 50 MHz with 1.71–1.89 V supply. It delivers instant non-volatile writes, 10¹⁵ read/write endurance, and 151-year data retention-enabling reliable logging in industrial sensor nodes and real-time metering systems.
For engineers reviewing the CY15V104QN50BFXITXUMA1 datasheet, CY15V104QN50BFXITXUMA1 pinout, CY15V104QN50BFXITXUMA1 application, or CY15V104QN50BFXITXUMA1 equivalent, this F-RAM offers bus-speed write capability without polling, ultra-low deep power-down current (0.70 µA), hardware/software write protection, and a dedicated 256-byte reflow-survivable special sector for critical configuration storage.
Technical Context
The CY15V104QN50BFXITXUMA1 implements an SPI slave interface compliant with modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), supporting continuous read/write transfers at up to 50 MHz clock rate. Its internal architecture integrates a 512K × 8 F-RAM array, a 256-byte dedicated special sector, nonvolatile status register, Device ID/Unique ID registers, and serial number registers.
Write operations complete synchronously with the SPI bus-no delay or polling required-due to ferroelectric memory physics. The device uses a tristatable SO pin, active-Low CS for standby entry, and WP pin for hardware-level status register lock when WPEN=1; DNU pin must be left floating or tied to VDD.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mb (512K × 8 bits), directly addressable via 19-bit SPI address field |
| SPI max frequency | 50 MHz - enables ≤200 ns per byte transfer time, eliminating write latency bottlenecks |
| Data retention | 151 years at +85°C - validated per JEDEC JESD22-A117, enabling maintenance-free operation in sealed industrial enclosures |
| Endurance | 10¹⁵ read/write cycles - supports >1000× more frequent writes than EEPROM in data-logging applications |
| Supply voltage | 1.71 V to 1.89 V - optimized for single-cell LiFePO₄ or regulated 1.8 V rails in space-constrained IoT edge devices |
| Deep power-down current | 0.70 µA (typ) - allows multi-year battery life in always-on sensor nodes with infrequent wake-up intervals |
| Operating temperature | –40°C to +85°C - qualified for industrial control cabinets, smart grid meters, and automotive under-hood telemetry modules |
Pinout & Package
Package: 8-pin SOIC (Small Outline Integrated Circuit), 150 mil width, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Active-Low chip select input | Asserts SPI slave mode; HIGH places device in standby (2.3 µA), LOW enables SCK sampling and I/O activity |
| SCK | Serial clock input | Synchronizes all SPI transfers; rising edge latches SI, falling edge drives SO; supports 0–50 MHz with interrupt tolerance |
| SI | Serial data input | Receives opcodes, addresses, and write data; must be driven to valid logic level to meet IDD specs |
| SO | Serial data output | Drives read data during MISO phase; tristated otherwise; transitions occur on SCK falling edge |
| WP | Active-Low write protect input | Locks status register when WPEN=1; must tie to VDD if unused to prevent accidental protection activation |
| VSS | Ground reference | System ground connection point; required for stable internal biasing and ESD path integrity |
| VDD | Power supply input | 1.71–1.89 V nominal; powers core logic, F-RAM array, and I/O buffers; decoupling capacitor mandatory |
| DNU | Do-not-use terminal | No internal connection; must remain unconnected or tied to VDD-floating acceptable per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Instant non-volatile write | Zero write latency: data committed immediately after SPI byte transfer-no timeout or polling needed |
| Dedicated 256-byte special sector | Retains content through ≥3 standard reflow cycles (260°C peak), ideal for factory-programmed calibration or security keys |
| Multi-layer write protection | Hardware (WP pin), software (WRDI), and block-level (1/4, 1/2, full array) schemes prevent unintended overwrites |
| Device identification | Read-only Manufacturer ID + Product ID + Unique ID + writable 8-byte serial number for traceability and anti-cloning |
| Ultra-low deep power-down | 0.70 µA typical current draw enables >10-year coin-cell operation in wake-on-event sensor designs |
Applications
| Industrial Data Logger | Smart Energy Meter |
|---|---|
Use Scenario: Continuous timestamped voltage/current sampling at 1 kHz in DIN-rail mounted PLC modules. IC Role / Device Role / Timing Role: Nonvolatile buffer storing last 72 hours of raw sensor data before upload; replaces EEPROM due to write-cycle constraints. Use Value: Eliminates 5–10 ms write delays per record, preventing data loss during brownouts or rapid power cycling. | Use Scenario: Tamper-proof storage of tariff tables, billing counters, and cryptographic keys in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: Secure, reflow-survivable configuration store; special sector holds AES-128 keys written once at factory. Use Value: Guarantees 151-year key persistence without refresh, meeting NIST SP 800-131A key lifetime requirements. |
| Automotive Telematics ECU | Medical Infusion Pump |
Use Scenario: Storing GPS trajectory snapshots and diagnostic fault codes in ADAS black-box recorders. IC Role / Device Role / Timing Role: High-endurance event logger capturing crash-triggered data bursts within 100 µs of impact detection. Use Value: Supports >10¹⁵ writes-enough for 100+ years of daily 1000-event logging-without wear leveling firmware overhead. | Use Scenario: Retaining dose history, calibration offsets, and safety-critical error logs in Class IIa infusion pumps. IC Role / Device Role / Timing Role: Fail-safe nonvolatile memory for FDA 21 CFR Part 11 audit trails; powered from backup supercap during main power loss. Use Value: Meets IEC 62304 SW safety Class C requirement for deterministic write completion and zero data corruption risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-50SXI | Wider VDD range (1.8–3.6 V); same 4 Mb density, 50 MHz SPI, and F-RAM endurance | Preferred for mixed-voltage systems (e.g., 3.3 V MCU + 1.8 V sensor rail) where voltage flexibility outweighs tight 1.8 V optimization | Select when board already uses 3.3 V supply and no low-voltage optimization is required |
| AT45DB041E-SHN-T | 4 Mb DataFlash (NOR-based); 100k endurance, 20 ms page write time, 2.7–3.6 V operation | Suitable only for infrequent configuration storage-not for high-frequency logging due to write latency and endurance limits | Choose only for cost-sensitive, low-write-count boot code storage where F-RAM advantages are unnecessary |
Compared with CY15B104QN-50SXI, the CY15V104QN50BFXITXUMA1 trades voltage flexibility for superior low-power performance (0.70 µA vs. 1.2 µA deep power-down) and tighter 1.8 V regulation-critical for energy-harvesting sensors. Versus AT45DB041E, it delivers 10¹⁰× higher endurance and eliminates write latency, making it irreplaceable in real-time data capture.
Availability
CY15V104QN50BFXITXUMA1 is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, automotive telematics ECUs, and medical infusion pumps requiring stable component supply across extended product lifecycles.
Supply support for CY15V104QN50BFXITXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and security solutions for industrial, automotive, and IoT markets.
This part belongs to the EXCELON™ LP F-RAM product line, engineered specifically for high-reliability, high-write-frequency nonvolatile storage in resource-constrained embedded systems where flash and EEPROM fall short.
FAQ
Is CY15V104QN50BFXITXUMA1 pin-compatible with standard SPI EEPROMs like AT25DF041?
No. While both use 8-pin SOIC and SPI protocol, CY15V104QN50BFXITXUMA1 has a DNU pin (pin 2) not present in AT25DF041, and its WP pin behavior differs: it locks only the status register when WPEN=1, whereas AT25DF041 uses WP for full-array protection. PCB layout requires dedicated footprint validation.
Does the 256-byte special sector support individual byte writes?
Yes. The special sector is fully byte-addressable and supports single-byte writes identical to main array operations-no page programming or erase cycles required. Its reflow survivability stems from process-level ferroelectric layer hardening, not logical partitioning.
Can the Unique ID be overwritten or reset?
No. The Unique ID is factory-laser-trimmed and stored in one-time-programmable (OTP) metal fuses. It is read-only via the RDUID command (0x4B) and cannot be altered by software, hardware reset, or power cycle-ensuring permanent device identity for secure boot and anti-counterfeiting.
What happens during power loss mid-write?
F-RAM physics guarantees atomic write completion: if power drops during a byte transfer, only that incomplete byte is lost-the rest of the array remains intact and uncorrupted. No external capacitor or backup supply is needed to ensure data integrity, unlike serial flash which risks sector corruption.
CY15V104QN50BFXITXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-UFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 50 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 1.71V ~ 1.89V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UFLGA (3.28x3.23)
CY15V104QN50BFXITXUMA1 FAQ
1.How can I place an order for CY15V104QN50BFXITXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15V104QN50BFXITXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15V104QN50BFXITXUMA1 reliable?
The price and inventory of CY15V104QN50BFXITXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V104QN50BFXITXUMA1 is usually 5 days.
3.What payment methods are accepted for CY15V104QN50BFXITXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V104QN50BFXITXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15V104QN50BFXITXUMA1?
CY15V104QN50BFXITXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15V104QN50BFXITXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15V104QN50BFXITXUMA1?
For technical support, including CY15V104QN50BFXITXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V104QN50BFXITXUMA1 requirements.
6.How does Aetrix verify that CY15V104QN50BFXITXUMA1 is sourced from the original manufacturer or authorized distributors?
All CY15V104QN50BFXITXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V104QN50BFXITXUMA1 meets industry standards.
7.What is the process for return or replacement of CY15V104QN50BFXITXUMA1?
All CY15V104QN50BFXITXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with CY15V104QN50BFXITXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15V104QN50BFXITXUMA1 part is unused and in its original packaging.
Return procedure for CY15V104QN50BFXITXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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