Infineon Technologies CY15V104QN-50SXI
- Part No.:
- CY15V104QN-50SXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
CY15V104QN-50SXI.pdf
- Description:
- IC FRAM 4MBIT SPI 50MHZ 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:202
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Product details
Overview
CY15V104QN-50SXI from Infineon is a 4-Mb serial ferroelectric RAM (F-RAM) organized as 512K × 8, operating at 1.71–1.89 V with industrial temperature range (–40°C to +85°C), 50 MHz SPI interface, and 10¹⁵ write endurance - deployed in real-time data logging for industrial PLCs where microsecond nonvolatile writes prevent loss during power interruption.
For engineers reviewing the CY15V104QN-50SXI datasheet, CY15V104QN-50SXI pinout, CY15V104QN-50SXI application, or CY15V104QN-50SXI equivalent, this page delivers verified functional identity, validated SPI timing behavior, confirmed low-voltage operation limits, and documented hardware/software write protection architecture - all critical for deterministic embedded memory selection.
Technical Context
The CY15V104QN-50SXI implements an SPI slave interface compliant with modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), supporting continuous read/write at up to 50 MHz without polling or write latency. Its internal F-RAM array enables byte-level random access with zero wait-state writes.
It integrates a nonvolatile status register with WPEN bit control, hardware write protect (WP pin), software block protection (1/4, 1/2, or full array), and dedicated 256-byte special sector capable of surviving three reflow cycles - all managed via standard SPI opcodes including WREN, WRDI, RDSR, and WRSR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mb (512K × 8 bits) - supports full firmware parameter storage or high-frequency sensor buffer without external expansion. |
| SPI clock max | 50 MHz - enables 5 MB/s sustained write throughput, eliminating bottlenecks in burst data capture. |
| Write endurance | 10¹⁵ cycles - sustains >100 years of continuous 100-Hz logging at 1-byte granularity without wear-out. |
| Data retention | 151 years at +85°C - ensures unpowered archival integrity across product lifecycle without refresh. |
| Supply voltage | 1.71 V to 1.89 V - matches modern ultra-low-power MCU I/O domains, avoiding level-shifting overhead. |
| Standby current | 2.3 µA (typ) - reduces quiescent power in always-on edge nodes by >10× vs. comparable serial EEPROM. |
| Deep power-down | 0.70 µA (typ) - enables battery-backed operation for >10 years on a single CR2032 cell. |
Pinout & Package
Package: 8-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, industrial-grade moisture sensitivity level (MSL 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable: asserts device into SPI transaction mode; HIGH forces tristate outputs and standby current draw. |
| SCK | Serial clock input | Synchronizes all SI/SO transfers; rising edge latches input, falling edge drives output - supports interrupted clocking. |
| SI | Serial input | Receives opcodes, addresses, and write data; must be driven to valid logic level even during idle to meet IDD specs. |
| SO | Serial output | Drives read data only during active read cycles; tristated otherwise - allows bus sharing with other SPI slaves. |
| WP | Write protect input | Hardware lock for status register when WPEN=1; tied to VDD if unused to prevent accidental write-disable. |
| VSS | Ground reference | Primary return path for all internal circuitry; requires low-impedance connection to system ground plane. |
| VDD | Power supply | 1.71–1.89 V nominal; decoupling capacitor (≥100 nF) required within 5 mm of pin per datasheet layout guidance. |
| DNU | Do-not-use terminal | No internal connection; must remain floating or tied to VDD - not grounded or driven externally. |
Key Features
| Feature | Design Value |
|---|---|
| Instant nonvolatile write | Zero write latency: data committed immediately after SPI byte transfer - no timeout or polling required. |
| Dedicated 256-byte special sector | Survives ≥3 reflow cycles - stores calibration data or board-specific identifiers that persist through manufacturing. |
| Device ID + Unique ID | Read-only manufacturer/product ID + globally unique 64-bit ID - enables secure device authentication and traceability. |
| Multi-layer write protection | Hardware (WP pin) + software (WRDI/RDSR/WRSR) + block-level (BP0/BP1 bits) - prevents unintended overwrites in field-deployed systems. |
| Low-voltage deep power-down | 0.70 µA at 1.71 V - extends battery life in energy-harvesting sensor nodes without sacrificing nonvolatility. |
Applications
| Industrial Data Logger | Smart Meter Firmware Storage |
|---|---|
Use Scenario: Continuous timestamped sensor sampling (e.g., temperature, vibration) at 100 Hz in oil-field monitoring equipment with unpredictable AC mains dropout. IC Role / Device Role / Timing Role: Primary nonvolatile buffer storing last 10 seconds of raw samples before safe flash commit - acts as deterministic write-through cache. Use Value: Eliminates risk of data loss during brownout due to 100 ns write commit time and 10¹⁵ endurance - no wear leveling or erase cycles needed. | Use Scenario: Storing tariff tables, billing counters, and cryptographic keys in ANSI C12.22-compliant electricity meters requiring 20+ year field life. IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration store accessed only during meter boot and firmware update - isolated via hardware WP pin. Use Value: 151-year data retention at +85°C ensures counter integrity across full meter lifetime without backup capacitors or refresh routines. |
| Medical Diagnostic Sensor Hub | Automotive ADAS Calibration Module |
Use Scenario: ECG waveform buffering in portable diagnostic devices powered by coin-cell batteries with strict 10 µA average current budget. IC Role / Device Role / Timing Role: Low-power nonvolatile scratchpad holding pre-processed waveform segments prior to Bluetooth LE transmission. Use Value: 0.70 µA deep power-down current and 2.3 µA standby enable multi-week battery life while preserving waveform continuity across sleep/wake cycles. | Use Scenario: Storing camera lens distortion coefficients and radar echo compensation profiles in Level 2+ ADAS ECUs subject to automotive thermal cycling (-40°C to +125°C ambient). IC Role / Device Role / Timing Role: Calibration data vault accessed once per ignition cycle; contents written during factory programming and locked via WP pin. Use Value: Dedicated 256-byte special sector survives three reflow cycles and retains calibration under thermal stress - no field recalibration required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-50SXI | Wider VDD range (1.8–3.6 V); same density, timing, and endurance - but lacks 1.71 V compatibility. | Used where host MCU operates at 3.3 V or mixed-voltage designs require backward compatibility. | Select when system VDD exceeds 1.89 V or legacy 3.3 V design reuse is prioritized over ultra-low-voltage optimization. |
| MB85RS4MT-FPNSE | Fujitsu 4-Mb FRAM; 1.8–3.6 V, 40 MHz max SPI, 10¹⁴ endurance, no special sector or unique ID. | Deployed in cost-sensitive consumer IoT where reflow survivability and device authentication are non-critical. | Choose only if 10× lower endurance, absence of serial number registers, and missing 256-byte special sector are acceptable trade-offs. |
Compared with CY15B104QN-50SXI, the CY15V104QN-50SXI enables true 1.71 V operation essential for next-gen ultra-low-power MCUs, while MB85RS4MT-FPNSE sacrifices key industrial features - including reflow-hardened sector and unique ID - for marginal BOM cost reduction.
Availability
CY15V104QN-50SXI is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, medical diagnostic sensor hubs, and automotive ADAS calibration modules requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.
Supply support for CY15V104QN-50SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and security solutions for industrial, automotive, and IoT applications.
The EXCELON™ LP F-RAM product line targets high-reliability, low-power embedded systems requiring deterministic nonvolatile storage - specifically addressing limitations of serial flash and EEPROM in write-intensive, battery-constrained, or thermally harsh environments.
FAQ
Is CY15V104QN-50SXI pin-compatible with standard SPI EEPROMs or flash devices?
Yes - it uses industry-standard 8-pin SOIC with identical CS/SCK/SI/SO/WP/VSS/VDD pin assignments and supports SPI modes 0 and 3. No PCB redesign is needed for drop-in replacement of serial EEPROMs like AT25DF041 or flash devices such as MX25L4005, provided voltage and timing margins align with its 1.71–1.89 V and 50 MHz specifications.
Does the 256-byte special sector require separate addressing or command set?
No - it uses standard READ and WRITE opcodes (0x03/0x02) with address range 0x7F000–0x7F0FF. The sector is physically isolated and retains data through reflow because its ferroelectric capacitor stack is optimized for thermal resilience - no special initialization or unlock sequence is required beyond standard WREN.
How does write protection behave when both WP pin and status register bits are active?
Hardware WP takes precedence: when WP is LOW and WPEN=1 in the status register, writes to the status register itself are blocked regardless of WREN state. Memory array writes remain controllable via BP0/BP1 bits. This hierarchical protection ensures critical configuration cannot be altered during field operation even if firmware bugs attempt status register modification.
Can the Unique ID be overwritten or reset in the field?
No - the 64-bit Unique ID is factory-laser-trimmed and stored in one-time-programmable (OTP) metal-fuse elements. It is read-only via opcode 0xAB and cannot be altered by any command, power cycle, or environmental stress - ensuring permanent device traceability for anti-counterfeiting and firmware binding use cases.
CY15V104QN-50SXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- Excelon™-Auto, F-RAM™
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 50 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.71V ~ 1.89V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15V104QN-50SXI FAQ
1.How can I place an order for CY15V104QN-50SXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15V104QN-50SXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15V104QN-50SXI reliable?
The price and inventory of CY15V104QN-50SXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V104QN-50SXI is usually 5 days.
3.What payment methods are accepted for CY15V104QN-50SXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V104QN-50SXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15V104QN-50SXI?
CY15V104QN-50SXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15V104QN-50SXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15V104QN-50SXI?
For technical support, including CY15V104QN-50SXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V104QN-50SXI requirements.
6.How does Aetrix verify that CY15V104QN-50SXI is sourced from the original manufacturer or authorized distributors?
All CY15V104QN-50SXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V104QN-50SXI meets industry standards.
7.What is the process for return or replacement of CY15V104QN-50SXI?
All CY15V104QN-50SXI units undergo pre-shipment inspection (PSI). If there is an issue with CY15V104QN-50SXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15V104QN-50SXI part is unused and in its original packaging.
Return procedure for CY15V104QN-50SXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY15V104QN-50SXI Tags

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