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Infineon Technologies CY15V104QN-50SXIT
- Part No.:
- CY15V104QN-50SXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
CY15V104QN-50SXIT.pdf
- Description:
- IC FRAM 4MBIT SPI 50MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,793
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Product details
Overview
CY15V104QN-50SXIT from Infineon is a 4-Mb serial ferroelectric RAM (F-RAM) organized as 512K × 8, operating at 1.71–1.89 V with industrial temperature range (–40°C to +85°C), 50 MHz SPI interface, and 10¹⁵ write endurance - deployed in real-time data logging for industrial PLCs where microsecond nonvolatile writes prevent data loss during power interruption.
For engineers reviewing the CY15V104QN-50SXIT datasheet, CY15V104QN-50SXIT pinout, CY15V104QN-50SXIT application, or CY15V104QN-50SXIT equivalent, key selection criteria include guaranteed 50 MHz SPI timing, 151-year data retention without refresh, hardware/software write protection, dedicated 256-byte reflow-survivable sector, and VDD=1.71–1.89 V low-voltage operation for battery-backed systems.
Technical Context
The CY15V104QN-50SXIT implements an SPI slave interface compliant with modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), with zero-latency write execution - no polling required - because each byte is committed to nonvolatile memory immediately upon SI clocking, enabling deterministic bus turnaround. Its internal architecture integrates a 512K × 8 F-RAM array, 256-byte special sector, Device ID/Unique ID registers, and a nonvolatile status register with WPEN control.
Write protection operates at three levels: hardware via active-low WP pin (when WPEN=1), software via WRDI instruction, and block-level via BP0/BP1 bits enabling 1/4, 1/2, or full-array lock. The device supports deep power-down (0.70 µA) and hibernate (0.1 µA) modes, with VSS-to-VDD sequencing defined per Infineon's AC/DC specifications for industrial reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mb (512K × 8 bits) - provides byte-addressable nonvolatile storage matching EEPROM footprint but with RAM-like access semantics |
| SPI max frequency | 50 MHz - enables 5 MB/s sustained write throughput without wait states or command overhead |
| Data retention | 151 years at +85°C - eliminates need for periodic refresh or wear-leveling firmware in long-life deployments |
| Endurance | 10¹⁵ read/write cycles - supports continuous logging at 1 kHz for >31,700 years without degradation |
| Supply voltage | 1.71 V to 1.89 V - compatible with single-cell LiFePO₄ or regulated 1.8 V rails in space-constrained IoT edge nodes |
| Operating temp | –40°C to +85°C - qualified for industrial automation, motor drives, and smart metering environments |
| Deep power-down current | 0.70 µA (typ) - extends battery life in always-on sensor nodes with infrequent write events |
Pinout & Package
Package: 8-pin SOIC (Small Outline Integrated Circuit), 150 mil width, RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable: falling edge initiates opcode decoding; HIGH places device in standby (2.3 µA) |
| SCK | Serial clock input | Synchronizes all I/O; rising edge latches SI, falling edge drives SO; supports 0–50 MHz with interruptible clock |
| SI | Serial data input | Accepts opcodes, addresses, and write data; must be driven to valid logic level to meet IDD specs |
| SO | Serial data output | Drives read data on falling SCK edge; tristated when not reading or during write cycles |
| WP | Write protect input | Hardware lock for status register when WPEN=1; must tie to VDD if unused |
| VSS | Ground | Reference return path for all internal circuitry; requires low-impedance connection to system ground plane |
| VDD | Power supply | 1.71–1.89 V input; powers core, I/O, and F-RAM array; decoupling capacitor mandatory per datasheet layout guidelines |
| DNU | Do-not-use terminal | No internal connection; leave floating or tie to VDD - no electrical function or signal routing permitted |
Key Features
| Feature | Design Value |
|---|---|
| Instant nonvolatile write | Zero write latency: data committed on final SCK edge of byte transfer - no polling, no timeout handling required in host firmware |
| Dedicated 256-byte special sector | Retains content through ≥3 standard reflow cycles (260°C peak) - enables permanent board identification or calibration data storage pre-assembly |
| Multi-level write protection | Hardware (WP pin), software (WRDI), and block-level (BP0/BP1) - prevents accidental overwrites in field-deployed equipment with varying access privileges |
| Device and serial identification | Read-only 16-bit Device ID (manufacturer + product code) + 64-bit Unique ID + writable 8-byte serial number - supports secure provisioning and traceability in production |
| Ultra-low deep power-down | 0.70 µA typical current draw - allows multi-year operation from coin-cell batteries in maintenance-free remote sensors |
Applications
| Industrial Data Logger | Smart Energy Meter |
|---|---|
Use Scenario: Continuous timestamped sensor sampling (e.g., vibration, temperature) in factory-floor controllers with unpredictable power loss risk. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory storing last 10,000 samples; accepts writes at 10 kHz burst rate without buffering or delay. Use Value: Eliminates flash wear-out and EEPROM write stalls - ensures every sample survives brownout, enabling full forensic analysis post-failure. | Use Scenario: Storing tariff schedules, billing counters, and tamper logs in DIN-rail electricity meters operating 20+ years unattended. IC Role / Device Role / Timing Role: Primary event log memory; records meter disconnects, phase faults, and firmware updates with atomic 1-byte writes. Use Value: 10¹⁵ endurance guarantees >100 writes/second for 31,700 years - exceeds meter lifetime by 1,500×, removing replacement planning. |
| Medical Diagnostic Sensor Hub | Automotive ADAS Calibration Module |
Use Scenario: Portable ECG/EEG devices capturing raw waveform data during battery-powered field use with intermittent charging. IC Role / Device Role / Timing Role: Buffer memory holding 30 seconds of high-resolution biometric traces before USB upload; powered only during acquisition. Use Value: 1.71–1.89 V operation matches LiFePO₄ discharge curve; 0.1 µA hibernate mode preserves state between sessions without supercapacitor backup. | Use Scenario: Storing camera lens alignment offsets, radar beamforming coefficients, and thermal compensation tables in ADAS ECUs. IC Role / Device Role / Timing Role: Calibration parameter store updated once per vehicle service; survives solder reflow during module repair. Use Value: Dedicated 256-byte reflow-hardened sector retains critical calibration across board rework - avoids costly recalibration at dealership. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile serial memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-50ZSXI | Wider VDD range (1.8–3.6 V); identical 4-Mb F-RAM core, 50 MHz SPI, and endurance | Supports mixed-voltage systems (e.g., 3.3 V MCU with 1.8 V peripherals); not suitable for strict 1.8 V-only designs | Select when system VDD varies or shares rail with 3.3 V logic; verify WP pin behavior under 3.3 V conditions |
| AT45DB041E-SSHN-B | 4-Mb DataFlash (NOR-based); 66 MHz max SPI; 100k write cycles; 20-year retention; requires erase-before-write | Lower cost but introduces 8–20 ms erase latency per page; unsuitable for sub-millisecond write bursts | Choose only for infrequent configuration storage where write speed and endurance are non-critical |
Compared with CY15B104QN-50ZSXI, the CY15V104QN-50SXIT offers tighter voltage tolerance ideal for energy-harvesting or single-cell LiFePO₄ systems, while AT45DB041E demands erase management and degrades after ~10⁵ cycles - making it unfit for high-frequency logging despite similar density.
Availability
CY15V104QN-50SXIT is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, medical diagnostic sensor hubs, and automotive ADAS calibration modules requiring stable component supply across extended product lifecycles.
Supply support for CY15V104QN-50SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and nonvolatile memory solutions for industrial, automotive, and IoT applications.
The EXCELON™ LP F-RAM product line delivers instant-write, high-endurance serial memory targeting applications where flash/EEPROM latency, wear-out, or power constraints compromise system reliability.
FAQ
Is CY15V104QN-50SXIT pin-compatible with standard SPI EEPROMs like AT25DF041?
No. While both use 8-pin SOIC and SPI protocol, CY15V104QN-50SXIT has a DNU pin (pin 2) and different status register mapping, WP behavior, and no erase commands. Direct replacement requires firmware adaptation for command set and protection logic.
Does the 256-byte special sector require separate addressing or special opcodes?
Yes. Access uses dedicated opcodes: 0x77 for special sector write and 0x78 for read. It resides at fixed address 0x000000–0x0000FF and is write-protected independently - standard array commands do not affect it.
Can the Unique ID be overwritten or reprogrammed after manufacturing?
No. The 64-bit Unique ID is laser-trimmed during wafer test and stored in one-time-programmable (OTP) memory. It is read-only via opcode 0x4B and cannot be altered in-system or during programming.
What is the maximum junction temperature during reflow for the SOIC package?
The SOIC package is rated for standard lead-free reflow per JEDEC J-STD-020: peak temperature 260°C for ≤40 seconds, with ramp-up ≤3°C/s and ramp-down ≤6°C/s. The 256-byte special sector is validated to retain data across three such cycles.
CY15V104QN-50SXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- Excelon™-Auto, F-RAM™
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 50 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 1.71V ~ 1.89V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
CY15V104QN-50SXIT FAQ
1.How can I place an order for CY15V104QN-50SXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY15V104QN-50SXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY15V104QN-50SXIT reliable?
The price and inventory of CY15V104QN-50SXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V104QN-50SXIT is usually 5 days.
3.What payment methods are accepted for CY15V104QN-50SXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V104QN-50SXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY15V104QN-50SXIT?
CY15V104QN-50SXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY15V104QN-50SXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY15V104QN-50SXIT?
For technical support, including CY15V104QN-50SXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V104QN-50SXIT requirements.
6.How does Aetrix verify that CY15V104QN-50SXIT is sourced from the original manufacturer or authorized distributors?
All CY15V104QN-50SXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V104QN-50SXIT meets industry standards.
7.What is the process for return or replacement of CY15V104QN-50SXIT?
All CY15V104QN-50SXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY15V104QN-50SXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY15V104QN-50SXIT part is unused and in its original packaging.
Return procedure for CY15V104QN-50SXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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