Infineon Technologies CY15V108QI-20LPXC

Overview

CY15V108QI-20LPXC from Infineon is an 8-Mbit serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating on SPI interface at up to 20 MHz, with 1.71–1.89 V supply, industrial temperature range (–40°C to +85°C), and 10¹⁵ read/write endurance - deployed in real-time data logging systems requiring deterministic nonvolatile writes without write latency.

For engineers reviewing the CY15V108QI-20LPXC datasheet, CY15V108QI-20LPXC pinout, CY15V108QI-20LPXC application, or CY15V108QI-20LPXC equivalent, key selection criteria include SPI mode 0/3 compatibility, hardware/software write protection granularity (1/4, 1/2, full array), deep power-down current (0.1 µA), dedicated 256-byte reflow-survivable special sector, and inrush current control for stable power-up sequencing.

Technical Context

The CY15V108QI-20LPXC implements a true SPI slave architecture with zero-write-latency F-RAM core, eliminating polling and enabling immediate bus turnaround after each byte write. Its status register controls WPEN, BP0/BP1 bits for configurable block protection and supports Device ID (0x01, 0x15) and unique 64-bit ID reads.

It features dual low-power states: deep power-down (0.1 µA) with wake-up via CS assertion, and hibernate mode (0.1 µA) retaining full memory state while disabling SPI logic - both activated by dedicated opcodes (0xB9 and 0x66). The 256-byte special sector retains data across three standard reflow cycles (260°C peak).

Key Specifications

Pinout & Package

Package: 8-pin ultra-thin fine-pitch land grid array (UFLGA), 2.0 mm × 2.5 mm × 0.5 mm, RoHS-compliant, NRND status noted for GQFN variant but UFLGA is active for CY15V108QI-20LPXC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B108QI-20LPXC and FM25V05-G, the CY15V108QI-20LPXC uniquely balances 1.8 V operation, 20 MHz performance, 256-byte reflow-hardened storage, and cryptographic device identity - making it optimal for next-gen industrial edge sensors where voltage headroom, write speed, and manufacturing traceability are co-constrained.

Availability

CY15V108QI-20LPXC is available at Aetrix Electronics and suitable for smart metering infrastructure, programmable logic controller (PLC) modules, medical diagnostic transducers, and automotive ADAS ECUs requiring stable component supply across multi-year production programs.

Supply support for CY15V108QI-20LPXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

The EXCELON™ LP F-RAM product line targets high-reliability, low-power nonvolatile data logging - designed specifically for applications where flash/EEPROM latency, endurance limits, or power-up instability create system-level failure modes.

FAQ

Is CY15V108QI-20LPXC pin-compatible with standard SPI EEPROMs or flash devices?

No - while it shares the 8-pin SPI footprint (CS, SCK, SI, SO, WP, VSS, VDD, DNU), the DNU pin is unconnected and must not be bonded. Unlike EEPROMs, it lacks HOLD pin and requires no write-enable polling. Firmware must issue WRDI before WREN to enable writes, and status register bit interpretation differs significantly.

Does the 256-byte special sector require separate addressing or command set?

Yes - it uses dedicated opcodes: 0x77 for special sector read and 0x76 for write. Addressing is offset-based within the 256-byte space (0x00–0xFF), independent of main array addressing. The sector is write-protected by default and requires WP pin LOW and status register unlock sequence to modify.

How does inrush current control function during power-up?

The device integrates an internal slew-rate-limited charge pump that caps peak inrush to 1.6 mA (typ) during VDD ramp from 0 V to 1.71 V. This prevents system LDO dropout when multiple devices power up simultaneously, and eliminates need for external inrush limiters in compact PCB layouts.

Can the unique device ID be overwritten or disabled?

No - the 64-bit unique ID is factory-laser-trimmed into ROM and is read-only via opcode 0x4B. It cannot be altered, erased, or disabled. The 8-byte writable serial number register (accessed via 0x9F) is separate and intended for user-defined board-level identification.