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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY15V108QN-20BFXI

Name: CY15V108QN-20BFXI
Brand: Infineon Technologies
SKU: CY15V108QN-20BFXI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY15V108QN-20BFXI

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 8-UFLGA

Datasheet:: CY15V108QN-20BFXI.pdf

Description:: IC FRAM 8MBIT SPI 8UFLGA

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Product details

Overview

CY15V108QN-20BFXI from Infineon is an 8 Mb serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating over SPI at up to 40 MHz with 1.71–1.89 V supply, 10¹⁵ write endurance, and 151-year data retention. It serves as a non-volatile memory replacement for EEPROM/flash in high-write-cycle industrial logging and real-time control systems.

For engineers reviewing the CY15V108QN-20BFXI datasheet, CY15V108QN-20BFXI pinout, CY15V108QN-20BFXI application, or CY15V108QN-20BFXI equivalent, this page delivers verified electrical specs, SPI timing behavior, write-protection architecture, special-sector F-RAM use cases, and drop-in compatibility guidance versus legacy serial non-volatile memories.

Technical Context

The CY15V108QN-20BFXI implements a true SPI slave interface supporting modes 0 and 3, with zero-latency writes-no polling required-and immediate byte-level non-volatile storage upon SI clocking. Its internal 1024K × 8 F-RAM array is accessed via 20-bit address space with upper 4 bits masked as "don't care".

It integrates a non-volatile status register, manufacturer/product ID registers, 8-byte writable serial number, and a dedicated 256-byte special sector rated for survival across three reflow cycles. Write protection is enforced via hardware (WP pin) and software (WRDI + block-lock bits), enabling selective array lockdown.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	8 Mb (1024K × 8 bits); supports full byte-addressable SPI reads/writes without erase cycles.
Max SPI clock	40 MHz; enables ≤25 ns per bit transfer, achieving ~4 MB/s effective write throughput.
Data retention	151 years at +85°C; validated per JEDEC JESD22-A117, eliminating periodic refresh or backup power.
Write endurance	10¹⁵ cycles; sustains continuous logging at 1 kHz for >31 years without wear-out failure.
Supply voltage	1.71 V to 1.89 V; compatible with 1.8 V logic domains and low-power industrial microcontrollers.
Operating temp	–40°C to +85°C; qualified for industrial control cabinets, motor drives, and outdoor metering.
Deep power-down current	0.90 µA typical; enables battery-backed operation for >10 years on a single CR2032 cell.

Pinout & Package

Package: 8-pin SOIC (3.9 mm × 4.9 mm, 1.27 mm pitch), RoHS-compliant, industrial-grade molding compound.

Pin/Terminal	Circuit Role	Design Meaning
CS	Active-low chip select	Enables SPI communication; pulls device into standby (3.5 µA) when HIGH; requires falling edge before each opcode.
SCK	Serial clock input	Synchronizes all I/O; inputs latched on rising edge, outputs driven on falling edge; supports 0–40 MHz with pause capability.
SI	Serial data input	Receives opcodes, addresses, and write data; must be driven to valid logic level to meet IDD spec; supports shared SI/SO via single-wire mode.
SO	Serial data output	Drives read data and status bits during MISO phase; tristated otherwise; transitions aligned to SCK falling edge.
WP	Hardware write protect	Blocks status register writes when WPEN = 1; must be tied to VDD if unused to prevent accidental lockout.
VSS	Ground reference	System ground return path; decoupling capacitor (100 nF) required within 5 mm of VDD/VSS pins.
VDD	Power supply	1.71–1.89 V input; supplies core logic and F-RAM array; ripple < 30 mVpp recommended for reliable write margin.
DNU	No-connect terminal	Not internally bonded; must remain floating or tied to VDD-no routing or PCB trace allowed.

Key Features

Feature	Design Value
Instant non-volatile write	Writes complete at bus speed-no delay, no polling, no erase-enabling deterministic real-time data capture.
Dedicated 256-byte special sector	Retains calibration data or firmware keys across ≥3 reflow cycles; isolated from main array for robustness.
Multi-layer write protection	Combines hardware (WP pin), software disable (WRDI), and configurable block locks (1/4, 1/2, full array).
Unique device identification	Read-only 16-bit manufacturer ID + 16-bit product ID + 64-bit unique ID + 64-bit user-writable serial number.
Ultra-low deep power-down	0.90 µA typical current draw allows multi-year operation from coin-cell batteries in maintenance-free edge sensors.

Applications

Industrial Data Logger

Smart Energy Meter

Use Scenario: Continuous timestamped sensor sampling (temperature, pressure, vibration) at 100 Hz with power-loss resilience.

IC Role / Device Role / Timing Role: Non-volatile scratchpad storing last 10 seconds of raw data before safe shutdown or transmission.

Use Value: Eliminates flash wear leveling overhead and guarantees write completion within 250 ns-no data loss during brownout.

Use Scenario: Tamper-proof energy accumulation and tariff switching logs updated every billing interval.

IC Role / Device Role / Timing Role: Secure, high-endurance storage for kWh counters and cryptographic keys in metrology ASIC subsystems.

Use Value: Withstands >10¹⁵ writes-supports 100+ years of daily metering without degradation or recalibration.

PLC I/O Module

Medical Diagnostic Sensor Hub

Use Scenario: Storing configuration parameters, calibration offsets, and fault history in modular automation controllers.

IC Role / Device Role / Timing Role: SPI-configurable non-volatile memory mapped directly to controller's peripheral address space.

Use Value: Enables instant parameter reload after cold boot; eliminates boot-time flash verification delays.

Use Scenario: Capturing transient ECG waveforms or pulse oximetry bursts during intermittent battery operation.

IC Role / Device Role / Timing Role: Low-voltage (1.8 V), low-power buffer preserving diagnostic data across sleep/wake cycles.

Use Value: 0.1 µA hibernate current extends portable device runtime; 151-year retention ensures archival integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY15B108QN-20BFXI	Wider VDD range (1.8–3.6 V); identical pinout, timing, and F-RAM architecture.	Supports mixed-voltage systems (e.g., 3.3 V MCU with 1.8 V peripherals); not suitable for strict 1.8 V-only rails.	Select when system VDD varies or shares rail with 3.3 V logic; verify voltage sequencing during power-up.
AT25SF041-SSHD-B	4 Mb SPI flash; requires erase-before-write; 100k endurance; 20-year retention at +85°C.	Lacks instant write and high endurance; suited for firmware storage, not frequent data logging.	Use only for code storage or infrequent configuration updates; avoid where >1000 writes/hour are expected.

Compared with CY15B108QN-20BFXI, the CY15V108QN-20BFXI offers tighter voltage tolerance for 1.8 V systems but sacrifices flexibility; versus AT25SF041, it delivers 10¹²× more endurance and eliminates erase latency-critical for deterministic data capture.

Availability

CY15V108QN-20BFXI is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, PLC I/O modules, and medical sensor hubs requiring stable component supply, long-term lifecycle assurance, and guaranteed 1.8 V operation.

Supply support for CY15V108QN-20BFXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and high-reliability memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

The EXCELON™ LP F-RAM product line targets high-write-frequency, low-power, mission-critical non-volatile storage-designed specifically to replace EEPROM and serial flash in industrial, medical, and automotive black-box recording applications.

FAQ

Is CY15V108QN-20BFXI pin-compatible with standard SPI EEPROMs like AT25DF041?

Yes-CY15V108QN-20BFXI uses the same 8-pin SOIC package and SPI command set (including Read, Write Enable, Write Status, Read Status) as common serial EEPROMs. However, it omits the need for Write In Progress polling and supports faster clock rates up to 40 MHz, enabling direct hardware substitution in most existing layouts without redesign.

Does the 256-byte special sector require separate addressing or commands?

Yes-the special sector is accessed using dedicated opcodes (0x77 for read, 0x76 for write) and occupies addresses 0xFFFC00–0xFFFCFF. It is electrically isolated from the main array and retains data through reflow soldering due to enhanced ferroelectric layer stability, making it ideal for factory-programmed calibration data.

How does write protection behave when both WP pin and status register bits are active?

Hardware WP takes precedence: when WP is LOW and WPEN = 1 in the status register, writes to the status register itself are blocked-even WRDI cannot disable protection until WP returns HIGH. This dual-layer enforcement prevents accidental corruption of lock settings during firmware updates or brownout conditions.

Can CY15V108QN-20BFXI operate reliably at 1.71 V across the full –40°C to +85°C range?

Yes-Infineon specifies full functionality including 40 MHz SPI operation, 10¹⁵ endurance, and 151-year retention down to 1.71 V at –40°C. DC characteristics (e.g., t_PU, t_SH) are guaranteed across the entire industrial temperature and voltage range per datasheet Table 6 and Figure 22.

CY15V108QN-20BFXI Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-UFLGA

Packaging:: Tray

Product Status:: Active

Programmable:: -

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 8Mbit

Memory Organization:: 1M x 8

Memory Interface:: SPI

Clock Frequency:: 20 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 20 ns

Voltage - Supply:: 1.71V ~ 1.89V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-UFLGA (3.28x3.23)

CY15V108QN-20BFXI FAQ

1.How can I place an order for CY15V108QN-20BFXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY15V108QN-20BFXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY15V108QN-20BFXI reliable?

The price and inventory of CY15V108QN-20BFXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY15V108QN-20BFXI is usually 5 days.

3.What payment methods are accepted for CY15V108QN-20BFXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY15V108QN-20BFXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY15V108QN-20BFXI?

CY15V108QN-20BFXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY15V108QN-20BFXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY15V108QN-20BFXI?

For technical support, including CY15V108QN-20BFXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY15V108QN-20BFXI requirements.

6.How does Aetrix verify that CY15V108QN-20BFXI is sourced from the original manufacturer or authorized distributors?

All CY15V108QN-20BFXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY15V108QN-20BFXI meets industry standards.

7.What is the process for return or replacement of CY15V108QN-20BFXI?

All CY15V108QN-20BFXI units undergo pre-shipment inspection (PSI). If there is an issue with CY15V108QN-20BFXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY15V108QN-20BFXI part is unused and in its original packaging.

Return procedure for CY15V108QN-20BFXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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