Infineon Technologies CY15V108QN-20LPXC

Overview

CY15V108QN-20LPXC from Infineon is an 8-Mbit serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating at up to 50 MHz SPI clock, with 1.71–1.89 V supply, -40°C to +85°C industrial temperature range, and 10¹⁵ read/write endurance. It delivers instant non-volatile writes without write delays or polling, enabling real-time data logging in power-constrained industrial controllers.

For engineers reviewing the CY15V108QN-20LPXC datasheet, CY15V108QN-20LPXC pinout, CY15V108QN-20LPXC application, or CY15V108QN-20LPXC equivalent, key selection criteria include SPI mode 0/3 compatibility, hardware/software write protection, 256-byte special sector survivability across three reflow cycles, and sub-1 µA hibernate current for ultra-low-power edge nodes.

Technical Context

The CY15V108QN-20LPXC implements a true SPI slave interface with zero-latency write execution-data commits immediately after byte transfer, eliminating status polling. Its F-RAM core uses lead zirconate titanate (PZT) ferroelectric capacitors to achieve non-volatility without charge-pump programming or erase cycles.

It integrates a non-volatile status register, manufacturer/product ID registers, 8-byte user-writable serial number, and a dedicated 256-byte special sector hardened for reflow soldering. Write protection is enforced via WP pin (hardware) and WRDI instruction plus block-lock bits (software), supporting 1/4, 1/2, or full-array lock.

Key Specifications

Pinout & Package

Package: 24-ball fine-pitch ball grid array (FBGA), 4.0 mm × 3.0 mm × 0.75 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with CY15B108QN-20LPXC, the CY15V108QN-20LPXC offers tighter voltage tolerance and lower quiescent current but sacrifices supply flexibility; versus MB85RS8MT, it provides superior thermal robustness, integrated security features, and drop-in FBGA compatibility for space-constrained designs.

Availability

CY15V108QN-20LPXC is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, medical diagnostic recorders, and automotive ADAS event buffers requiring stable component supply across extended product lifecycles.

Supply support for CY15V108QN-20LPXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and IoT markets.

The EXCELON™ LP F-RAM product line targets high-reliability, low-power non-volatile memory applications demanding extreme endurance, instant writes, and long-term data retention in harsh environments.

FAQ

Is CY15V108QN-20LPXC pin-compatible with standard SPI flash devices?

Yes, it uses identical 24-ball FBGA pinout and SPI command set (including Read, Write, WREN, WRDI, RDSR) as common 8-Mbit SPI flash, enabling hardware drop-in replacement without layout changes. However, WP pin behavior differs: it protects only the status register when WPEN=1, unlike flash where WP typically locks entire memory.

What is the purpose of the 256-byte special sector?

The dedicated 256-byte special sector is fabricated with enhanced process margin to retain data through ≥3 Pb-free reflow soldering cycles (peak 260°C). It is intended for factory-programmed calibration coefficients, security keys, or serial numbers that must survive board assembly and rework.

Does CY15V108QN-20LPXC require external high-voltage programming?

No. Unlike EEPROM or flash, it performs writes at standard VDD (1.71–1.89 V) with no charge pump or high-voltage generator. All operations use single-supply logic-level signaling, simplifying power design and eliminating HV-related EMI or reliability concerns.

How does write endurance compare to serial EEPROM?

It delivers 10¹⁵ read/write cycles - one quadrillion - which is 1000 million times greater than typical serial EEPROM (10⁶ cycles). At 1000 writes/second, this equates to continuous operation for over 151 years without wear-out, eliminating lifetime write-cycle budgeting.