Infineon Technologies CY15V108QN-40LPXIT

Overview

CY15V108QN-40LPXIT from Infineon is an 8 Mb serial ferroelectric RAM (F-RAM) organized as 1024K × 8, operating at up to 40 MHz SPI clock, with 1.71–1.89 V supply, 10¹⁵ read/write endurance, and 151-year data retention. It serves as a non-volatile memory replacement for EEPROM/flash in high-write-cycle industrial data loggers.

For engineers reviewing the CY15V108QN-40LPXIT datasheet, CY15V108QN-40LPXIT pinout, CY15V108QN-40LPXIT application, or CY15V108QN-40LPXIT equivalent, key selection criteria include instant write capability, ultra-low deep power-down current (0.90 µA), hardware/software write protection, and SOIC-8 industrial-grade packaging.

Technical Context

The CY15V108QN-40LPXIT implements a true SPI slave interface supporting modes 0 and 3, with zero-latency writes-no polling required-and full bus-speed data transfer. Its internal architecture integrates a 1024K × 8 F-RAM array, a 256-byte dedicated special sector, non-volatile status register, Device ID/serial number registers, and independent WP pin control logic.

It features dual-layer write protection: hardware-level via active-low WP pin (when WPEN=1), and software-level via WRDI instruction and block-protection bits (BP0/BP1) enabling 1/4, 1/2, or full-array lock. The device enters standby (<3.5 µA) when CS is HIGH and supports four low-power states including hibernate (0.1 µA).

Key Specifications

Pinout & Package

Package: 8-pin SOIC (Small Outline Integrated Circuit), RoHS-compliant, industrial-grade moisture sensitivity level (MSL3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with CY15B108QN-40LPXIT, the CY15V108QN-40LPXIT delivers superior power efficiency and tighter voltage tolerance for 1.8 V systems, while AT25SF041 lacks endurance and write speed-making it unfit for high-cycle industrial logging despite lower unit cost.

Availability

CY15V108QN-40LPXIT is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, PLC I/O modules, and portable medical diagnostic devices requiring stable component supply across extended product lifecycles.

Supply support for CY15V108QN-40LPXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949 and AEC-Q200.

The EXCELON™ LP F-RAM product line targets industrial and automotive applications demanding extreme endurance, zero-write-latency, and long-term data retention-replacing legacy EEPROM and serial flash where reliability and speed are critical.

FAQ

Is CY15V108QN-40LPXIT pin-compatible with standard SPI EEPROMs like AT25DF041?

Yes, it uses the same 8-pin SOIC package and standard SPI pinout (CS, SCK, SI, SO, WP, VSS, VDD), enabling drop-in replacement in most layouts. However, WP functionality differs: CY15V108QN requires WPEN bit set in status register to activate hardware write protection, whereas AT25DF041 uses WP pin unconditionally. Firmware must initialize the status register accordingly.

Does the 256-byte special sector require separate addressing or commands?

No-it resides at fixed address 0xFFE00–0xFFEFF and is accessed using standard READ/WRITE opcodes (0x03/0x02), but with dedicated SPECIAL SECTOR WRITE (0x7C) and READ (0x7D) commands to ensure robustness during reflow. These commands bypass normal write protection and are validated to survive three lead-free soldering cycles.

What is the maximum achievable write throughput in continuous mode?

At 40 MHz SPI clock with 8-bit data, theoretical throughput is 5 MB/s. Real-world sustained write rate is ~4.2 MB/s due to opcode/address overhead and minimal inter-byte gaps. Unlike flash, no erase or page-program delays apply-each byte commits instantly upon SI shift completion.

How does the device handle power loss during a write operation?

F-RAM technology guarantees atomic byte-level writes: if power fails mid-transfer, only the incomplete byte is lost-the rest of the array remains intact and uncorrupted. No internal charge pumps or high-voltage generators are used, eliminating flash-style partial-page corruption or need for wear-leveling recovery algorithms.