Infineon Technologies CY22E016L-SZ35XC

Overview

CY22E016L-SZ35XC from Cypress Semiconductor is a 16 Kbit (2K × 8) nonvolatile SRAM with hardware- and auto-store capability, 35 ns access time, single 5V ±10% supply, and SOIC-28 package. It integrates QuantumTrap™ nonvolatile storage per cell, enabling infinite SRAM reads/writes and 1M STORE cycles. Used in industrial control modules requiring persistent memory retention during unexpected power loss.

For engineers reviewing the CY22E016L-SZ35XC datasheet, CY22E016L-SZ35XC pinout, CY22E016L-SZ35XC application, or CY22E016L-SZ35XC equivalent, key selection criteria include AutoStore capacitor sizing (68 μF), HSB-controlled hardware store timing, VCAP voltage threshold (VSWITCH), and compatibility with 5V TTL/CMOS bus interfaces in mission-critical embedded systems.

Technical Context

The CY22E016L-SZ35XC implements a dual-cell architecture: standard fast SRAM array (32 × 512) paired with parallel QuantumTrap™ nonvolatile elements (32 × 512). STORE and RECALL operations execute atomically across all 2048 bytes, with SRAM access inhibited during nonvolatile transfers.

AutoStore initiates on VCC drop below VSWITCH (~3.6 V), using charge from the external VCAP capacitor; hardware STORE is triggered by pulling HSB low, with tDELAY (≥20 ns) allowing pending writes to complete. The device supports three operational modes-AutoStore, AutoStore Inhibit, and Hardware Store-selected via VCC/VCAP connection and HSB state.

Key Specifications

Pinout & Package

Package: 28-pin Small Outline Integrated Circuit (SOIC), surface-mount, RoHS-compliant, 300 mil body width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with CY14B108N-BAI and FM24CL16B, the CY22E016L-SZ35XC uniquely delivers parallel 8-bit bus performance with deterministic hardware STORE control and industrial temperature-rated VCAP-based energy autonomy-critical for real-time deterministic systems where latency and power-loss predictability are non-negotiable.

Availability

CY22E016L-SZ35XC is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, and avionics black box recorders requiring stable component supply, long-lifecycle assurance, and guaranteed RoHS-compliant sourcing.

Supply support for CY22E016L-SZ35XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY22E016L belongs to Cypress's nvSRAM product line, engineered specifically for applications demanding instant-on data persistence without batteries or external controllers-targeting deterministic fail-safe memory in harsh-environment control systems.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY22E016L-SZ35XC requires a minimum 68 μF capacitor on the VCAP pin, rated at 6V ±20%, to guarantee completion of the full STORE cycle during power loss. Tantalum or aluminum electrolytic types are recommended; values below 68 μF risk incomplete STORE and data loss, especially at elevated temperatures or fast VCC slew rates.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes-the HSB pin has an internal weak pull-up and may be left floating if hardware STORE is not required. However, in multi-device configurations or noisy environments, a 10 kΩ external pull-up to VCC is recommended to prevent false STORE triggers due to noise coupling on the open-drain node.

Does the CY22E016L-SZ35XC support true simultaneous READ and WRITE operations?

No-it does not support simultaneous READ and WRITE. During any WRITE cycle (CE and WE LOW), the device latches address and data; concurrent READ attempts are ignored until the WRITE completes. STORE and RECALL operations also block all SRAM access, enforcing strict sequential execution for data integrity.

How does the device behave during power-up when VCC rises slowly?

During slow VCC ramp-up, the CY22E016L-SZ35XC inhibits all STORE and WRITE operations until VCC exceeds VSWITCH (~3.6 V). Once crossed, an automatic RECALL cycle begins and completes in tHRECALL (typ. 10 ms); only after RECALL finishes does the device accept normal READ/WRITE commands, preventing corrupted initialization.