Infineon Technologies CY22E016L-SZ35XI

Overview

CY22E016L-SZ35XI from Cypress Semiconductor is a 16 Kbit (2K × 8) nonvolatile static RAM with integrated QuantumTrap™ technology, operating at 35 ns access time, single 5V ±10% supply, and SOIC-28 package. It performs automatic STORE on power loss using an external 68 μF VCAP capacitor and RECALL on power-up, enabling data retention for 100 years with 1M STORE cycles. Used in industrial control modules requiring persistent memory without battery backup.

For engineers reviewing the CY22E016L-SZ35XI datasheet, CY22E016L-SZ35XI pinout, CY22E016L-SZ35XI application, or CY22E016L-SZ35XI equivalent, key selection criteria include AutoStore timing compliance, HSB-controlled hardware STORE synchronization, VCAP capacitor sizing, and SRAM-compatible interface timing under industrial temperature range (–40°C to +85°C).

Technical Context

The CY22E016L-SZ35XI integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 2,048 bytes. STORE is triggered by power-down voltage drop below VSWITCH (~3.6V) or active-low HSB assertion, with tSTORE ≤ 10 ms and tHRECALL ≤ 15 ms.

It uses standard SRAM control signals (CE#, OE#, WE#) with tri-state I/O (DQ0–DQ7), address bus A0–A10, and dedicated VCAP power rail for energy storage. HSB operates as open-drain output during STORE and input for hardware initiation, supporting multi-device synchronization via shared VCAP and HSB bus.

Key Specifications

Pinout & Package

Package: 28-pin Small Outline Integrated Circuit (SOIC), surface-mount, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-35I/M and FM24CL16B-G, the CY22E016L-SZ35XI uniquely combines deterministic 10 ms STORE execution, HSB-driven multi-device coordination, and zero-battery maintenance-making it optimal for industrial systems where power-interruption resilience and serviceability are critical.

Availability

CY22E016L-SZ35XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, automotive body control modules, and telecom base stations requiring stable component supply with guaranteed long-term availability.

Supply support for CY22E016L-SZ35XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY22E016L belongs to Cypress's nvSRAM product line, engineered specifically to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-retention, and autonomous power-loss recovery are mandatory.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY22E016L-SZ35XI requires a minimum 68 μF capacitor (±20%, 6V rating) connected between VCAP and VSS to guarantee successful STORE during worst-case 10 ms power loss. Values up to 220 μF are supported; undersized capacitors risk incomplete STORE and data loss. Ceramic or tantalum types are acceptable if ESR remains below 1 Ω.

Can HSB be left unconnected if AutoStore is not used?

Yes - HSB may be left unconnected when AutoStore is enabled via VCAP and no hardware STORE is needed. The pin has an internal weak pull-up, so it remains HIGH by default. However, if HSB is used for multi-device synchronization, a 10 kΩ external pull-up to VCC is mandatory, and all HSB pins must be wired in parallel.

Does the CY22E016L-SZ35XI support true SRAM timing during RECALL?

No - during RECALL (which takes ≤15 ms), all SRAM READ and WRITE operations are inhibited. The device enters a non-responsive state until RECALL completes and internal logic re-enables the address/data paths. Host firmware must poll HSB or implement timeout-based wait loops before resuming memory access.

How does the CY22E016L-SZ35XI handle brown-out conditions?

When VCC falls below VSWITCH (~3.6V), the CY22E016L-SZ35XI disables all externally initiated STORE and WRITE operations to prevent data corruption. It continues SRAM reads until VCC drops further, then initiates AutoStore using VCAP energy. If VCC recovers above VSWITCH before STORE completes, RECALL begins immediately upon stabilization.