Infineon Technologies CY22E016L-SZ45XI

Overview

CY22E016L-SZ45XI from Cypress Semiconductor is a 16 Kbit (2K × 8) nonvolatile SRAM with QuantumTrap™ technology, operating at 45 ns access time, single 5V ±10% supply, and SOIC-28 package. It performs automatic STORE on power loss using an external 68 μF VCAP capacitor and RECALL on power-up, enabling data retention for 100 years with 1M STORE cycles. Used in industrial control modules requiring persistent memory without battery backup.

For engineers reviewing the CY22E016L-SZ45XI datasheet, CY22E016L-SZ45XI pinout, CY22E016L-SZ45XI application, or CY22E016L-SZ45XI equivalent, key selection criteria include AutoStore timing compliance, HSB-controlled hardware STORE synchronization, VCAP capacitor sizing, and compatibility with 5V TTL/CMOS bus interfaces in mission-critical embedded systems.

Technical Context

The CY22E016L integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 2048 bytes. STORE is triggered by power-down voltage drop below VSWITCH (~3.6V) or active-low assertion of HSB, with tDELAY (≥20 ns) allowing in-progress writes to complete before initiation.

RECALL occurs automatically on VCC rise above VSWITCH, completing in tHRECALL (≤10 ms), while SRAM read/write operations are inhibited during nonvolatile cycles. The device supports infinite SRAM reads/writes and RECALLs, but limits STORE to 1,000,000 cycles, with data retention guaranteed for 100 years at ≤85°C.

Key Specifications

Pinout & Package

Package: 28-pin Small Outline Integrated Circuit (SOIC), surface-mount, RoHS-compliant, 300 mil body width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-45I and FM24CL16B, CY22E016L-SZ45XI uniquely delivers deterministic 45 ns parallel SRAM performance with capacitor-based AutoStore-eliminating batteries and firmware changes while guaranteeing 10 ms STORE completion under worst-case power-loss slew rates.

Availability

CY22E016L-SZ45XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, and telecom base stations requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY22E016L-SZ45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

CY22E016L belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for applications demanding battery-free, fast, and deterministic nonvolatile storage in harsh power environments.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY22E016L-SZ45XI requires a minimum 68 μF capacitor rated at 6V (±20%) on the VCAP pin to guarantee successful STORE during power loss. Capacitors below this value risk incomplete STORE due to insufficient energy reserve, especially under fast VCC slew rates or elevated temperature. Larger values up to 220 μF are supported but do not improve reliability beyond the 68 μF threshold.

Can CY22E016L-SZ45XI operate without connecting the VCAP pin?

No. VCAP must be connected to a compliant capacitor for AutoStore functionality. If VCAP is left unconnected or shorted to ground, STORE operations will fail. In AutoStore Inhibit mode, VCAP is supplied with +5V directly and VCC is grounded-but this configuration disables automatic power-loss STORE and requires explicit HSB control, altering system power architecture.

How does the HSB pin behave during concurrent SRAM access and STORE request?

When HSB is pulled LOW, the CY22E016L-SZ45XI completes any ongoing SRAM WRITE within tDELAY (≥20 ns) before initiating STORE. In-progress READs continue, but new WRITEs are blocked until HSB returns HIGH. During STORE, HSB remains actively driven LOW and releases only after completion, providing unambiguous hardware busy signaling to the host controller.

Is CY22E016L-SZ45XI compatible with 3.3V I/O systems?

No. CY22E016L-SZ45XI is strictly a 5V-only device: inputs require VIH ≥2.2V and VIL ≤0.8V, and outputs drive VOH ≥2.4V at –4 mA. Interfacing with 3.3V microcontrollers requires level translation on all control and data lines (A0–A10, DQ0–DQ7, CE, WE, OE, HSB), as direct connection risks logic misreads and excessive current leakage.