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Infineon Technologies CY62126ESL-45ZSXA

Part No.:
CY62126ESL-45ZSXA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62126ESL-45ZSXA.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,739

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Product details

Overview

CY62126ESL-45ZSXA from Cypress Semiconductor is a 1-Mbit (64 K × 16) MoBL® Automotive CMOS static RAM with 45 ns access time, 2.2–3.6 V / 4.5–5.5 V dual-voltage operation, and ultra-low standby current (1 µA typical). It supports byte-level write control via BHE/ BLE, automatic power-down on deselection, and operates across –40 °C to +85 °C for automotive infotainment and ADAS memory buffering.

For engineers reviewing the CY62126ESL-45ZSXA datasheet, CY62126ESL-45ZSXA pinout, CY62126ESL-45ZSXA application, or CY62126ESL-45ZSXA equivalent, key selection criteria include TSOP II package compatibility, 16-bit data bus interface, CE/OE/BHE/ BLE timing margins, and ISB2 ≤ 4 µA at VCC(max) for battery-sensitive systems.

Technical Context

This SRAM implements a 64K × 16 asynchronous architecture with independent high- and low-byte enables (BHE, BLE), enabling partial-word writes without external logic. Its CMOS design achieves 1.3 mA typical active current at 1 MHz and <4 µA maximum standby current under full CMOS input conditions.

The device features automatic power-down when CE is HIGH, forcing I/Os into high-impedance state and reducing ICCDR to ≤3 µA at VCC = 1.5 V. All switching parameters-including tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns-are specified over automotive temperature and dual voltage ranges.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64 K × 16 bits - provides 128 KB of fast, non-volatile-retentive storage for firmware buffers or real-time data logging
Access Time 45 ns - ensures deterministic read latency for microcontroller interfaces running up to ~22 MHz burst rate
Voltage Range 2.2–3.6 V and 4.5–5.5 V - supports dual-rail systems including 3.3 V MCU domains and 5 V legacy peripherals
Standby Current 1 µA typical / 4 µA max - enables >1-year battery life in always-on automotive modules with periodic wake-up
Operating Temperature –40 °C to +85 °C - qualified per AEC-Q100 Grade 2 for under-hood and cabin-mounted ECUs
Package 44-pin TSOP II - surface-mount compatible with standard reflow profiles and board space-constrained automotive PCBs
Input Leakage ±1 µA - minimizes unintended current paths during sleep mode and simplifies high-impedance bus termination

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 0.8 mm pitch, 10.16 mm × 18.4 mm footprint, JEDEC MO-143 compliant. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Inputs 16-bit address bus supporting full 64K word addressing; TTL/CMOS compatible thresholds
I/O0–I/O7 Data Bus (Low Byte) Bi-directional 8-bit data path enabled only when BLE = LOW and CE = LOW (read) or WE = LOW (write)
I/O8–I/O15 Data Bus (High Byte) Bi-directional 8-bit data path enabled only when BHE = LOW and CE = LOW (read) or WE = LOW (write)
CE Chip Enable Active-LOW global enable; HIGH forces automatic power-down and high-impedance I/Os
OE Output Enable Active-LOW read strobe; must be LOW with CE LOW and WE HIGH to place data on I/O pins
WE Write Enable Active-LOW write strobe; controls data latching direction and disables outputs during write cycles
BHE Byte High Enable Active-LOW select for upper byte (I/O8–I/O15); enables partial-word writes without disturbing low byte
BLE Byte Low Enable Active-LOW select for lower byte (I/O0–I/O7); enables partial-word writes without disturbing high byte
VCC Power Supply Dual-rail support: two dedicated VCC pins accept either 2.2–3.6 V or 4.5–5.5 V simultaneously
VSS Ground Two dedicated ground pins ensure stable reference and reduce simultaneous switching noise
NC No Connect Pins 10, 11, 31, 32, 36 - internally unconnected; must remain floating or tied to ground per layout guidelines

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces standby current to 1 µA typical-critical for always-on telematics modules powered by vehicle battery
Automatic CE Power-Down Eliminates need for external power-gating circuitry; cuts ICC by >99% when CE is deasserted
Independent Byte Enables (BHE/ BLE) Enables 8-bit sub-word writes in 16-bit systems-reduces bus contention and eliminates glue logic in MCU interfaces
Automotive Temperature Qualification Validated across –40 °C to +85 °C per AEC-Q100, ensuring reliability in engine control and display units
TSOP II Package with Dual VCC Pins Supports mixed-voltage designs while maintaining JEDEC-standard footprint for drop-in replacement in legacy layouts

Applications

Infotainment Head Unit Buffering ADAS Camera Frame Buffer

Use Scenario: Storing decoded audio/video frames and UI assets in automotive head units with intermittent CPU access.

IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM buffer interfacing directly to ARM Cortex-A53 application processor's external memory bus.

Use Value: 45 ns tRC enables real-time frame rendering at 60 fps; 1 µA ISB2 extends battery backup duration during ignition-off states.

Use Scenario: Temporary storage of raw image data from 1.3 MP camera sensors before compression and transmission over LVDS.

IC Role / Device Role / Timing Role: High-speed parallel buffer between image sensor interface and SoC video processing pipeline.

Use Value: Independent BHE/ BLE allows pixel-row-aligned partial writes; tDOE = 22 ns meets timing closure for 25 MHz pixel clocks.

Body Control Module Event Log Instrument Cluster Display Cache

Use Scenario: Capturing and retaining diagnostic events (e.g., door lock actuation, light fault codes) across vehicle power cycles.

IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM holding timestamped logs accessible via CAN-connected microcontroller.

Use Value: VDR = 1.5 V and ICCDR ≤ 3 µA allow retention using supercapacitor backup; –40 °C to +85 °C rating ensures field reliability.

Use Scenario: Caching rendered gauge graphics and animation frames for TFT LCD displays in digital instrument clusters.

IC Role / Device Role / Timing Role: Dedicated display memory mapped to GPU framebuffer controller with burst-read capability.

Use Value: 64K × 16 organization matches 1280 × 480 × 16-bit display resolution; tAA = 45 ns satisfies GPU read latency budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-Mbit SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV51216BLL-45NLI 45 ns access, same 64K × 16 organization, but rated only for industrial –40 °C to +85 °C (not AEC-Q100 qualified) Lacks automotive qualification; unsuitable for safety-critical ECU use but acceptable for non-certified aftermarket modules Select when AEC-Q100 compliance is not required and cost sensitivity outweighs qualification overhead
Renesas R1LV5256ES-45Z 45 ns access, identical TSOP II package and pinout, but specifies only 2.7–3.6 V operation (no 4.5–5.5 V support) Incompatible with 5 V legacy automotive subsystems; requires level-shifting or separate power domain Select only in pure 3.3 V designs where dual-voltage flexibility is unnecessary

Compared with IS62WV51216BLL-45NLI and R1LV5256ES-45Z, CY62126ESL-45ZSXA uniquely combines AEC-Q100 Grade 2 qualification, dual-voltage support, and guaranteed 45 ns performance across full temperature range-making it the only choice for certified automotive memory subsystems requiring robustness and design reuse.

Availability

CY62126ESL-45ZSXA is available at Aetrix Electronics and suitable for automotive infotainment, ADAS camera interfaces, and body control modules requiring stable component supply across extended temperature and dual-voltage environments.

Supply support for CY62126ESL-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a semiconductor company specializing in memory, PSoC, and USB solutions for automotive, industrial, and consumer markets.

CY62126ESL belongs to the MoBL® Automotive SRAM product line, engineered specifically for low-power, high-reliability memory buffering in automotive electronic control units operating across harsh thermal and electrical environments.

FAQ

What is the minimum VCC required to retain data in CY62126ESL-45ZSXA?

The device guarantees data retention down to VCC = 1.5 V, as specified by VDR parameter. At this voltage, ICCDR remains ≤3 µA, enabling long-term retention using supercapacitor or small backup battery. Operation below 1.5 V risks data loss, and no timing or functional behavior is guaranteed below this threshold.

Can CY62126ESL-45ZSXA operate reliably in the 3.6 V to 4.5 V VCC range?

No. Datasheet Note 2 explicitly states that specifications are not guaranteed for VCC between 3.6 V and 4.5 V. The device is characterized and warranted only for 2.2–3.6 V and 4.5–5.5 V ranges. Operation in the gap may cause undefined behavior or accelerated wear.

How does automatic power-down behave when OE is HIGH but CE is LOW?

Automatic power-down is triggered solely by CE HIGH. When CE is LOW and OE is HIGH, the device remains powered and address/data lines are sampled-but outputs are disabled (high-Z), and no read or write occurs. Active current (ICC) still flows due to internal logic activity, so true low-power state requires CE HIGH.

Are NC pins on CY62126ESL-45ZSXA required to be left floating?

Yes. Pins 10, 11, 31, 32, and 36 are internally unconnected (NC) and must not be soldered to traces or tied to any net. Per datasheet Page 3 Note 1, connecting NC pins may cause unpredictable behavior or increased leakage; they should remain electrically isolated on PCB layout.

CY62126ESL-45ZSXA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62126ESL-45ZSXA FAQ

1.How can I place an order for CY62126ESL-45ZSXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62126ESL-45ZSXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62126ESL-45ZSXA reliable?

The price and inventory of CY62126ESL-45ZSXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126ESL-45ZSXA is usually 5 days.

3.What payment methods are accepted for CY62126ESL-45ZSXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126ESL-45ZSXA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62126ESL-45ZSXA?

CY62126ESL-45ZSXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62126ESL-45ZSXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62126ESL-45ZSXA?

For technical support, including CY62126ESL-45ZSXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126ESL-45ZSXA requirements.

6.How does Aetrix verify that CY62126ESL-45ZSXA is sourced from the original manufacturer or authorized distributors?

All CY62126ESL-45ZSXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126ESL-45ZSXA meets industry standards.

7.What is the process for return or replacement of CY62126ESL-45ZSXA?

All CY62126ESL-45ZSXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62126ESL-45ZSXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62126ESL-45ZSXA part is unused and in its original packaging.

Return procedure for CY62126ESL-45ZSXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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