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Infineon Technologies CY62126ESL-45ZSXAT

Part No.:
CY62126ESL-45ZSXAT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62126ESL-45ZSXAT.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,887

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Product details

Overview

CY62126ESL-45ZSXAT from Cypress Semiconductor is a 1-Mbit (64 K × 16) automotive-grade CMOS static RAM with 45 ns access time, 2.2–3.6 V / 4.5–5.5 V dual-voltage operation, and ultra-low standby current (1 µA typical). It supports byte-wide read/write via independent BHE/ BLE controls and features automatic CE-driven power-down for battery-sensitive applications including telematics control units and ADAS sensor buffers.

For engineers reviewing the CY62126ESL-45ZSXAT datasheet, CY62126ESL-45ZSXAT pinout, CY62126ESL-45ZSXAT application, or CY62126ESL-45ZSXAT equivalent, key selection criteria include its dual-voltage compatibility, 44-pin TSOP II package, 99% standby power reduction, and MoBL®-optimized active current (1.3 mA at 1 MHz).

Technical Context

The CY62126ESL-45ZSXAT implements a full CMOS 64K × 16 SRAM array with independent high- and low-byte enables (BHE/BLE), enabling selective 8-bit writes without disturbing adjacent data. Its address decoding uses A0–A15 for full 64K-word addressing and supports asynchronous read/write cycles with guaranteed tRC = 45 ns across automotive temperature range (–40°C to +85°C).

Power management is handled through CE-controlled automatic power-down: when CE is HIGH at CMOS level, ICCDR drops to ≤3 µA at VCC = 1.5 V, and ISB2 remains ≤4 µA at max VCC. I/O pins enter high-impedance state during deselect, OE HIGH, or write operations-ensuring clean bus sharing in multi-device memory systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64 K × 16 bits - provides 128 KB of fast, non-refreshing storage for firmware caching or real-time data buffering
Access Time 45 ns - ensures deterministic timing for microcontroller interfaces operating up to ~22 MHz burst rate
Voltage Range 2.2–3.6 V and 4.5–5.5 V - supports dual-rail systems without level-shifting in automotive body control modules
Standby Current 1 µA typical / 4 µA max - enables >10-year battery backup in always-on vehicle subsystems
Active Current 1.3 mA typical at 1 MHz - reduces thermal load in sealed ECUs with limited airflow
Data Retention Voltage 1.5 V minimum - allows graceful degradation during brown-out conditions without data loss
Operating Temperature –40°C to +85°C - qualified for under-hood and cabin-mounted automotive electronics per AEC-Q100 Class 2

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), 400 mil width, lead-free (RoHS-compliant), JEDEC MO-141AC standard.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Inputs 16-bit address bus supporting full 64K-word decode; TTL/CMOS compatible
I/O0–I/O7 Data Bus (Low Byte) Bi-directional 8-bit data path enabled by BLE LOW; high-impedance when deselected
I/O8–I/O15 Data Bus (High Byte) Bi-directional 8-bit data path enabled by BHE LOW; independent from low-byte control
CE Chip Enable Active-LOW master select; drives automatic power-down and high-Z I/O when HIGH
OE Output Enable Active-LOW read strobe; disables outputs (high-Z) when HIGH, regardless of CE state
WE Write Enable Active-LOW write strobe; initiates write cycle when CE and WE both LOW
BHE Byte High Enable Active-LOW control for I/O8–I/O15; enables partial-word writes without affecting low byte
BLE Byte Low Enable Active-LOW control for I/O0–I/O7; enables partial-word writes without affecting high byte
VCC Power Supply Dual-rail compatible: two dedicated VCC pins support decoupling for noise isolation
VSS Ground Two dedicated ground pins minimize ground bounce in high-speed access cycles
NC No Connect Pins 1, 10, 11, 31, 32, 36 - not bonded on die; must be left unconnected

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces standby current to 1 µA typical-enables multi-year battery life in always-on telematics modules
Independent Byte Enables (BHE/BLE) Allows 8-bit writes to either half of 16-bit word without read-modify-write overhead or bus contention
Automatic CE Power-Down Guarantees >99% power reduction when CE is HIGH; eliminates need for external power gating logic
Dual-Voltage Operation Operates natively at 2.5 V or 5 V rails-supports legacy 5 V MCU interfaces and modern low-voltage SoCs
Automotive Temperature Qualification Validated from –40°C to +85°C per AEC-Q100 stress testing-suitable for engine control and ADAS domains

Applications

Telematics Control Unit (TCU) Advanced Driver Assistance Systems (ADAS) Sensor Hub

Use Scenario: Real-time GPS position logging and cellular handshaking buffer in connected vehicle platforms.

IC Role / Device Role / Timing Role: High-speed, low-power SRAM for temporary packet assembly and timestamped event storage.

Use Value: 45 ns access enables seamless 10 Hz GNSS update handling; 1 µA standby extends battery runtime during ignition-off tracking.

Use Scenario: Aggregating raw camera, radar, and ultrasonic sensor data before fusion processing.

IC Role / Device Role / Timing Role: Local frame buffer for pre-processing pipeline with byte-selective write capability.

Use Value: Independent BHE/BLE allows parallel 8-bit writes from multiple sensors; dual-voltage support matches mixed-signal sensor interface levels.

Body Control Module (BCM) Infotainment Head Unit Boot Cache

Use Scenario: Storing door lock status, lighting profiles, and HVAC settings across power cycles.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM backed by supercapacitor or backup battery.

Use Value: 1.5 V data retention threshold permits reliable operation during 12 V rail sag; TSOP II footprint fits tight PCB layouts.

Use Scenario: Caching boot firmware images for fast cold-start performance in Android Automotive head units.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency instruction/data cache between flash and application processor.

Use Value: 45 ns tRC meets ARM Cortex-A53/A72 burst read requirements; 44-pin TSOP II simplifies routing vs. BGA alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV102416BLL-45NLI Same 64K × 16 organization and 45 ns speed, but only 2.7–3.6 V operation; no 4.5–5.5 V support Restricted to 3.3 V-only systems; unsuitable for dual-rail automotive designs requiring 5 V compatibility Select when system operates exclusively at 3.3 V and requires lower cost; verify voltage margin against supply ripple
Renesas R1LV0108ESB-45PB Identical 64K × 16, 45 ns, and automotive temp grade, but uses 48-pin TSOP I package (wider pitch) Requires PCB redesign due to different pin count, spacing, and NC pin layout; no direct drop-in replacement Choose only if existing design already uses 48-pin TSOP I footprint; avoid for new designs targeting CY62126ESL-45ZSXAT's 44-pin layout

Compared with IS62WV102416BLL-45NLI and R1LV0108ESB-45PB, the CY62126ESL-45ZSXAT uniquely supports dual-voltage rails and fits the industry-standard 44-pin TSOP II footprint-making it the only option for cost-sensitive, space-constrained automotive systems needing both 2.5 V and 5 V interoperability.

Availability

CY62126ESL-45ZSXAT is available at Aetrix Electronics and suitable for telematics control units, ADAS sensor hubs, and body control modules requiring stable component supply across extended automotive lifecycles.

Supply support for CY62126ESL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a global leader in high-performance memory, microcontrollers, and connectivity solutions for automotive, industrial, and consumer applications.

The CY62126ESL belongs to Cypress's MoBL® Automotive SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in battery-backed and always-on vehicle subsystems.

FAQ

What is the minimum VCC required to retain data in CY62126ESL-45ZSXAT?

The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA, allowing extended hold time during brown-out events. Full functionality resumes once VCC rises above 2.2 V (for low-voltage mode) or 4.5 V (for high-voltage mode), with 100 µs ramp time recommended.

Can CY62126ESL-45ZSXAT operate reliably at 3.3 V?

Yes-3.3 V falls within the validated 2.2–3.6 V operating range. All AC and DC parameters, including 45 ns access time and 1.3 mA active current, are fully specified and tested at 3.3 V. The device also meets AEC-Q100 Class 2 requirements at this voltage across –40°C to +85°C.

How does the automatic power-down feature activate?

Automatic power-down activates when Chip Enable (CE) is driven HIGH at CMOS level (≥VCC – 0.2 V), regardless of OE or WE state. This forces the device into ISB2 mode (≤4 µA), disables internal circuitry, and places all I/O pins in high-impedance state-no additional control signals or configuration registers are required.

Are the NC pins on CY62126ESL-45ZSXAT electrically isolated?

Yes-pins 1, 10, 11, 31, 32, and 36 are No Connect (NC) and are not bonded to the silicon die. They must remain unconnected on the PCB; routing traces or applying voltage to these pins may cause unpredictable behavior or damage. The datasheet explicitly states "NC pins are not connected on the die."

CY62126ESL-45ZSXAT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62126ESL-45ZSXAT FAQ

1.How can I place an order for CY62126ESL-45ZSXAT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62126ESL-45ZSXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62126ESL-45ZSXAT reliable?

The price and inventory of CY62126ESL-45ZSXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126ESL-45ZSXAT is usually 5 days.

3.What payment methods are accepted for CY62126ESL-45ZSXAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126ESL-45ZSXAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62126ESL-45ZSXAT?

CY62126ESL-45ZSXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62126ESL-45ZSXAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62126ESL-45ZSXAT?

For technical support, including CY62126ESL-45ZSXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126ESL-45ZSXAT requirements.

6.How does Aetrix verify that CY62126ESL-45ZSXAT is sourced from the original manufacturer or authorized distributors?

All CY62126ESL-45ZSXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126ESL-45ZSXAT meets industry standards.

7.What is the process for return or replacement of CY62126ESL-45ZSXAT?

All CY62126ESL-45ZSXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62126ESL-45ZSXAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62126ESL-45ZSXAT part is unused and in its original packaging.

Return procedure for CY62126ESL-45ZSXAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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