Infineon Technologies CY62126ESL-45ZSXI

Overview

CY62126ESL-45ZSXI from Cypress Semiconductor is a 1-Mbit (64 K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (max 4 µA), and TTL-compatible I/O for embedded microcontroller memory expansion in portable industrial systems.

For engineers reviewing the CY62126ESL-45ZSXI datasheet, CY62126ESL-45ZSXI pinout, CY62126ESL-45ZSXI application, or CY62126ESL-45ZSXI equivalent, key selection criteria include its dual-voltage support, byte-enable architecture (BHE/ BLE), automatic CE power-down behavior, and TSOP II package compatibility with legacy 5 V and modern low-voltage controllers.

Technical Context

The device implements a 64K × 16-bit SRAM array with independent high- and low-byte enables (BHE, BLE), enabling selective 8-bit writes to I/O8–I/O15 or I/O0–I/O7 without full-word access. Its CMOS core delivers TTL-level input thresholds and output drive capability, supporting direct interface with 5 V microcontrollers while maintaining sub-2 mA active current at 1 MHz.

Automatic power-down activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA - a >99% reduction versus active mode. Data retention remains valid down to VCC = 1.5 V, with tCDR = 0 ns and tR = 45 ns recovery, making it suitable for battery-backed suspend modes in handheld instrumentation and edge sensor nodes.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), Type II, lead-free, top-view pinout with NC pins unconnected on die. Pin pitch: 0.8 mm; body width: 10.16 mm; height: 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-45NLI and NB16L16T-45Z, CY62126ESL-45ZSXI uniquely balances dual-voltage interoperability, ultra-low 4 µA standby, and pure SRAM determinism-making it optimal for cost-sensitive, battery-constrained, and mixed-rail industrial designs where external NVRAM complexity must be avoided.

Availability

CY62126ESL-45ZSXI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, handheld test equipment, and smart energy meters requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62126ESL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply stability.

The MoBL® (More Battery Life™) SRAM product line targets portable and energy-harvesting systems requiring ultra-low quiescent current, fast access, and robust data retention - directly addressing design constraints in battery-operated edge devices.

FAQ

Is CY62126ESL-45ZSXI compatible with 5 V microcontrollers?

Yes - its TTL-compatible input thresholds (VIH ≥ 2.2 V at 2.7–3.6 V, ≥ 2.2 V at 4.5–5.5 V) and output drive (VOH ≥ 2.4 V, VOL ≤ 0.4 V) meet standard 5 V TTL logic levels. It operates natively at 4.5–5.5 V, eliminating need for level shifters when interfacing with legacy 8051 or AVR devices.

What happens to data when VCC drops below 2.2 V but stays above 1.5 V?

Data remains retained as long as VCC ≥ 1.5 V and CE remains HIGH at CMOS level. The device enters data retention mode with ICCDR ≤ 3 µA; no external capacitor or battery is required. Recovery time tR is 45 ns once VCC returns to operational range and CE goes LOW.

Can I use only the low byte (I/O0–I/O7) without connecting BHE?

Yes - leaving BHE unconnected (or held HIGH) disables the high byte, allowing exclusive use of I/O0–I/O7 with BLE control. However, BHE must not float during operation; tie to VCC through a 10 kΩ pull-up if unused to ensure defined logic state and prevent leakage-induced noise coupling.

Does CY62126ESL-45ZSXI support asynchronous burst reads?

No - it is a classic asynchronous SRAM with no internal burst counter or sequential address generation. Each read requires valid address setup before CE/OE assertion, and data appears after tAA (≤45 ns). Burst transfers must be managed externally by the controller using address incrementing logic.