Infineon Technologies CY62126EV30LL-45BVXI

Overview

CY62126EV30LL-45BVXI from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C), packaged in 48-ball VFBGA. It delivers ultra-low standby current (1 µA typ), automatic CE-controlled power-down, and byte-wide I/O control via BHE/ BLE for portable memory expansion in battery-constrained systems.

For engineers reviewing the CY62126EV30LL-45BVXI datasheet, CY62126EV30LL-45BVXI pinout, CY62126EV30LL-45BVXI application, or CY62126EV30LL-45BVXI equivalent, key selection criteria include its MoBL® low-power architecture, VFBGA footprint compatibility, 16-bit data bus interface, and CE/OE/BHE/ BLE timing behavior under varying VCC and temperature conditions.

Technical Context

The CY62126EV30LL-45BVXI implements a fully static 64K × 16 SRAM array with complementary metal oxide semiconductor (CMOS) process technology, enabling zero-refresh operation and deterministic read/write timing. Its dual-byte enable (BHE/ BLE) architecture supports independent high- and low-byte access without external logic.

Power management is handled through automatic CE-driven transition into sub-1 µA standby mode when deselected, with output pins entering high-impedance state during CE HIGH, OE HIGH, BHE/ BLE HIGH, or write cycles. All timing parameters-including tRC = 45 ns, tACE = 45 ns, and tDOE = 22 ns-are guaranteed over full voltage (2.2–3.6 V) and industrial temperature (–40 °C to +85 °C) ranges.

Key Specifications

Pinout & Package

Package: 48-ball very fine pitch ball grid array (VFBGA), 6 mm × 8 mm body, 0.5 mm ball pitch, JEDEC MO-276AA compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV6416BLL-45NLI and AS6C1008-45TIN, the CY62126EV30LL-45BVXI uniquely combines 2.2 V operation, VFBGA packaging, sub-4 µA standby, and true dual-byte enable-making it the sole choice for compact, long-life, mixed-voltage portable systems requiring deterministic timing.

Availability

CY62126EV30LL-45BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial data loggers, wireless sensor nodes, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for CY62126EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip (PSoC), memory, and USB solutions for embedded applications.

The CY62126EV30 series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in portable and energy-harvesting systems where battery longevity and deterministic timing are critical.

FAQ

What is the minimum VCC required to retain data in CY62126EV30LL-45BVXI?

The device guarantees data retention down to VDR = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial temperature conditions. This allows integration with supercapacitor or backup battery circuits that decay below nominal operating voltage while preserving stored configuration or telemetry data.

Does CY62126EV30LL-45BVXI require external pull-up resistors on BHE, BLE, or OE?

No external pull-ups are required. All control inputs (CE, OE, WE, BHE, BLE) have internally biased CMOS receivers with VIH(min) = 1.8 V (at VCC ≥2.2 V) and VIL(max) = 0.6 V, ensuring clean logic thresholds even with unterminated microcontroller GPIOs. Pull-ups are only needed if driving from open-drain sources or level-shifted signals outside CMOS voltage ranges.

Can CY62126EV30LL-45BVXI operate reliably at 2.2 V and 85 °C simultaneously?

Yes. The datasheet explicitly guarantees all AC and DC specifications-including tRC = 45 ns, ISB2 ≤4 µA, and ICC ≤2.0 mA-at the full intersection of VCC = 2.2 V and TA = +85 °C. This is validated per the Operating Range table and Electrical Characteristics test conditions, making it suitable for thermally stressed, low-voltage portable designs.

How does the automatic power-down feature interact with OE and BHE/ BLE states?

Automatic power-down is triggered solely by CE HIGH, regardless of OE, BHE, or BLE states. When CE goes HIGH, the core array powers down within 45 ns (tPD), and all I/Os enter high-impedance-even if OE or BHE/ BLE remain LOW. OE and BHE/ BLE only affect output drivers during active (CE LOW) operation; they do not override CE-driven power state transitions.