Infineon Technologies CY62126EV30LL-45BVXIT

Overview

CY62126EV30LL-45BVXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C), packaged in a 48-ball VFBGA. It delivers ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-level write enable (BHE/ BLE) for portable memory expansion in battery-constrained systems.

For engineers reviewing the CY62126EV30LL-45BVXIT datasheet, CY62126EV30LL-45BVXIT pinout, CY62126EV30LL-45BVXIT application, or CY62126EV30LL-45BVXIT equivalent, key selection criteria include verified 45 ns read/write timing at 3.3 V, guaranteed 1 µA ISB2 standby current under industrial conditions, VFBGA package thermal resistance (θJA = 58.85 °C/W), and MoBL®-optimized active power (1.3 mA typical at 1 MHz).

Technical Context

The CY62126EV30LL-45BVXIT implements a full CMOS 64K × 16 SRAM array with independent high- and low-byte enables (BHE, BLE), enabling selective 8-bit writes without read-modify-write cycles. Its automatic power-down logic activates when CE is HIGH and all address/data lines are stable, reducing ICC to ≤4 µA.

Timing is fully specified for both read (tRC = 45 ns, tDOE = 22 ns) and write (tWC = 45 ns, tSD = 25 ns) operations across 2.2–3.6 V and –40 °C to +85 °C. Input thresholds meet CMOS-compatible VIH/VIL levels, and output drive supports 0.4 V VOL at 2.1 mA sink current.

Key Specifications

Pinout & Package

48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) with 16 bidirectional data I/Os, 16 address inputs, and dedicated CE/OE/WE/BHE/BLE control terminals. NC pins are unconnected on die.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-45NLI, CY62126EV30LL-45BVXIT offers superior packaging flexibility and lower standby power; versus NVMFS16M16T045, it trades nonvolatility for significantly lower active and standby current, making it optimal for pure volatile buffering where cost and power dominate.

Availability

CY62126EV30LL-45BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment UI cache requiring stable component supply, long-lifecycle support, and RoHS-compliant VFBGA packaging.

Supply support for CY62126EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY62126EV30 series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-reliability volatile memory in space- and energy-constrained portable electronics.

FAQ

What is the maximum clock frequency supported for continuous read/write cycling?

The CY62126EV30LL-45BVXIT does not use a clock; it is an asynchronous SRAM. Its maximum operational frequency is determined by access time: at 45 ns, it supports up to ~22.2 MHz random read/write cycles. Sustained burst rates depend on system bus timing margins and are validated up to 1 MHz for typical ICC measurements.

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes. When both BHE and BLE are driven LOW while CE and WE are LOW, the device performs a full 16-bit write to the addressed location. The I/O0–I/O7 and I/O8–I/O15 buses operate concurrently, with no internal arbitration delay between byte lanes.

Is the 48-ball VFBGA pinout compatible with other Cypress SRAMs in the same family?

No. The CY62126EV30LL-45BVXIT uses a proprietary 48-ball VFBGA pinout optimized for signal integrity and thermal performance. It is not pin-compatible with CY62126DV30 or other generations - mechanical and electrical layout must be designed specifically for this ball map.

Does the device retain data when VCC drops below 1.5 V?

Data retention is guaranteed only down to VDR = 1.5 V. Below this voltage, retention is not specified. At VDR = 1.5 V, ICCDR is ≤3 µA (industrial grade), allowing data hold for minutes to hours depending on system capacitance and leakage paths - but no minimum retention time is guaranteed.