Infineon Technologies CY62126EV30LL-45ZSXA

Overview

CY62126EV30LL-45ZSXA from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C), packaged in a 48-ball VFBGA. It delivers ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-wide I/O control via BHE/ BLE for portable battery-powered systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62126EV30LL-45ZSXA datasheet, CY62126EV30LL-45ZSXA pinout, CY62126EV30LL-45ZSXA application, or CY62126EV30LL-45ZSXA equivalent, key selection criteria include its 45 ns read cycle time, 1 µA typical ISB2 standby current, VFBGA-48 package compatibility, and dual-byte enable architecture supporting partial-word writes in space-constrained embedded designs.

Technical Context

The CY62126EV30LL-45ZSXA implements a full CMOS 64K × 16 SRAM array with independent high- and low-byte enables (BHE, BLE), enabling selective 8-bit writes without disturbing adjacent data. Its automatic power-down logic activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA.

Read and write operations are controlled by synchronous assertion of CE with OE (read) or WE (write), while output impedance transitions (tLZOE = 5 ns, tHZOE = 18 ns) ensure clean bus sharing in multi-device memory subsystems. All timing parameters are specified over full voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6.0 mm × 8.0 mm body, 0.5 mm ball pitch, JEDEC MO-276 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV6416EBLL-45NLI and R1LV0616A-45Z, the CY62126EV30LL-45ZSXA uniquely combines industrial temperature qualification, true dual-byte write capability, and lowest standby current in VFBGA packaging-making it optimal for battery-critical, space-constrained, and thermally demanding embedded systems.

Availability

CY62126EV30LL-45ZSXA is available at Aetrix Electronics and suitable for cellular handset baseband subsystems, industrial PLC data buffering, and portable medical monitor designs requiring stable component supply across extended product lifecycles.

Supply support for CY62126EV30LL-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The MoBL™ (More Battery Life) SRAM product line was designed specifically for ultra-low-power portable electronics, emphasizing sub-microamp standby current, wide voltage operation, and compact packaging without sacrificing speed or reliability.

FAQ

What is the maximum clock frequency supported for continuous read/write cycling?

The CY62126EV30LL-45ZSXA does not use a clock signal; it is an asynchronous SRAM. Its maximum operational frequency is determined by the 45 ns read cycle time (tRC), permitting up to ~22.2 MHz sustained random-access throughput when interfaced with a controller capable of meeting setup/hold timing. Burst transfers are limited only by address transition speed and bus protocol overhead.

Can BHE and BLE be used simultaneously to write a full 16-bit word?

Yes. When both BHE and BLE are driven LOW concurrently with CE and WE, the device performs a full 16-bit write to the addressed location. The I/O0–I/O7 and I/O8–I/O15 buses operate independently but synchronously, allowing atomic full-word updates without intermediate states or bus contention.

Is the VFBGA-48 package lead-free and RoHS-compliant?

Yes. The CY62126EV30LL-45ZSXA carries the "Z" suffix per Cypress ordering nomenclature, indicating Pb-free (lead-free) construction and full compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

Does this SRAM retain data during brief VCC interruptions?

No. The CY62126EV30LL-45ZSXA is volatile memory and requires continuous VCC within 2.2–3.6 V to retain data. For data retention during power loss, external backup capacitors or supercapacitors must be used, and the device supports data retention mode at VDR ≥1.5 V with ICCDR ≤3 µA-verified only when CE is held HIGH and all inputs are stabilized.