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Infineon Technologies CY62126EV30LL-45ZSXAT
- Part No.:
- CY62126EV30LL-45ZSXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62126EV30LL-45ZSXAT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,713
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Product details
Overview
CY62126EV30LL-45ZSXAT from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-level write enable (BHE/ BLE) for embedded memory expansion in portable battery-powered systems.
For engineers reviewing the CY62126EV30LL-45ZSXAT datasheet, CY62126EV30LL-45ZSXAT pinout, CY62126EV30LL-45ZSXAT application, or CY62126EV30LL-45ZSXAT equivalent, key selection criteria include VFBGA-48 package compatibility, 16-bit data bus interface, MoBL® low-power architecture, and pin-for-pin equivalence with CY62126DV30 for drop-in SRAM upgrades.
Technical Context
The device implements a fully static 64K × 16 RAM array with independent byte-enable control via BHE and BLE, enabling selective high- or low-byte writes without external logic. Its CMOS design supports full rail-to-rail input/output voltage levels across 2.2–3.6 V operation, with guaranteed timing at 45 ns under industrial conditions.
Power management relies on dual standby modes: ISB1 (address/data inactive) and ISB2 (all inputs stable), both delivering ≤4 µA max current at 3.6 V. Output drivers enter high-impedance state when CE, OE, BHE, or BLE are deasserted, ensuring clean bus sharing in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits = 1 Mbit total capacity; supports 16-bit parallel data interface without external multiplexing |
| Access Time | 45 ns maximum (industrial temp, VCC ≥ 2.2 V); ensures deterministic read latency for real-time microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern low-voltage SoCs and battery-backed systems operating down to 2.2 V |
| Standby Current | 1 µA typical / 4 µA maximum at 3.6 V; enables >1-year battery life in always-on IoT sensor nodes |
| Active Current | 1.3 mA typical at 1 MHz; scales linearly with frequency for predictable power budgeting in portable designs |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial-grade reliability in harsh ambient environments |
| Package | 48-ball VFBGA (6.0 mm × 8.0 mm, 0.5 mm pitch); supports high-density PCB layouts with minimal footprint |
Pinout & Package
Package: 48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6.0 mm × 8.0 mm, 0.5 mm pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 64K memory locations; TTL/CMOS-compatible thresholds |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE; high-impedance when BLE or CE high |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE; isolated from low byte for independent byte writes |
| CE | Chip Enable | Active-low global select; forces automatic power-down and high-Z outputs when high |
| OE | Output Enable | Active-low read control; disables outputs (high-Z) when high, regardless of CE state |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CE and BHE/ BLE also asserted |
| BHE | Byte High Enable | Active-low control for I/O8–I/O15; allows high-byte-only writes without disturbing low byte |
| BLE | Byte Low Enable | Active-low control for I/O0–I/O7; enables low-byte-only writes in mixed-data applications |
| VCC | Power Supply | 2.2–3.6 V core supply; decoupling required within 10 mm of VFBGA corner balls |
| VSS | Ground | Dual ground balls (pins E1, H1) reduce switching noise and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 1.3 mA at 1 MHz and standby to 1 µA typical-enabling multi-year battery operation in wearables |
| Automatic CE-Controlled Power-Down | Enters sub-4 µA standby mode when CE is high and addresses stabilize-no software intervention required |
| Independent Byte Write Control | BHE and BLE pins allow simultaneous or separate high/low byte writes-eliminates need for external byte-masking logic |
| Pb-Free VFBGA Packaging | 48-ball VFBGA meets IPC/JEDEC J-STD-020D reflow profiles and supports automated optical inspection (AOI) |
| Pin Compatibility with CY62126DV30 | Direct hardware replacement for legacy designs-no PCB redesign needed for performance or power upgrades |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Continuous glucose monitor logging raw ADC samples every 5 seconds into local memory before wireless transmission. IC Role / Device Role / Timing Role: Non-volatile buffer storing 64K × 16-bit sensor history with deterministic 45 ns read access for firmware processing. Use Value: 1 µA standby current extends coin-cell battery life beyond 18 months while maintaining full SRAM speed during active sampling. |
Use Scenario: Real-time I/O status mirroring in modular PLC backplanes where fieldbus latency demands sub-50 ns memory response. IC Role / Device Role / Timing Role: Dual-port accessible SRAM acting as shared register bank between CPU and FPGA-based I/O controllers. Use Value: Byte-enable capability allows atomic updates to individual I/O byte registers without corrupting adjacent status bits. |
| Automotive Infotainment UI Cache | Wireless Sensor Node Memory |
|
Use Scenario: Caching frequently accessed GUI assets (icons, fonts) in head-unit display subsystems to reduce NAND flash wear. IC Role / Device Role / Timing Role: High-speed 16-bit SRAM interfaced directly to ARM Cortex-A53 AXI bus for zero-wait-state reads. Use Value: 45 ns access time eliminates pipeline stalls during rapid UI rendering, improving perceived responsiveness. |
Use Scenario: Storing encrypted sensor payloads in LoRaWAN end-nodes before scheduled uplink transmission cycles. IC Role / Device Role / Timing Role: Low-leakage memory holding 64K bytes of encrypted telemetry while MCU remains in deep-sleep mode. Use Value: 4 µA max ISB2 current ensures <100 nA average system leakage over 10-minute sleep intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV6416BLL-45NLI | 45 ns access, same 64K × 16 organization, but 44-pin TSOP-II only; no VFBGA option; 2.5–3.6 V supply range | Limited to board-level space where TSOP-II height and footprint are acceptable; not suitable for ultra-thin mobile modules | Select when legacy PCB layout uses TSOP-II sockets or thermal constraints favor larger package thermal mass |
| CY62126DV30LL-45ZSXI | Same pinout and timing, but older generation with higher 8 µA max standby current and no MoBL® optimization | Compatible in existing designs but lacks power savings critical for new battery-constrained products | Choose only for cost-sensitive replacements where 4× higher standby current is acceptable |
Compared with IS62WV6416BLL-45NLI, CY62126EV30LL-45ZSXAT offers VFBGA packaging and wider 2.2–3.6 V operation; versus CY62126DV30LL-45ZSXI, it delivers 4× lower standby current and improved data retention at 1.5 V-critical for energy-harvesting systems.
Availability
CY62126EV30LL-45ZSXAT is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, automotive infotainment UI cache, and wireless sensor node memory requiring stable component supply across extended product lifecycles.
Supply support for CY62126EV30LL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics markets.
This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed memory in battery-operated portable and IoT edge devices.
FAQ
What is the minimum VCC required to retain data in CY62126EV30LL-45ZSXAT?
Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤3 µA at that voltage. The device enters data retention mode automatically when CE is high and VCC drops below normal operating range-no external control signal is needed to initiate retention.
Can CY62126EV30LL-45ZSXAT operate reliably at 2.2 V with 45 ns timing?
Yes-the 45 ns access time is specified and tested across the full industrial temperature range (–40 °C to +85 °C) at VCC = 2.2 V. Electrical characteristics tables confirm tRC, tAA, and tACE meet 45 ns limits at minimum supply voltage.
How does automatic power-down behave when only some address lines toggle?
ISB1 mode activates only when *all* address and data lines are stable for ≥100 ns. If any address bit toggles-even one-the device remains in active mode. This prevents spurious power-down during partial address changes in burst-access patterns.
Is the VFBGA package of CY62126EV30LL-45ZSXAT compatible with standard reflow profiles?
Yes-it complies with IPC/JEDEC J-STD-020D Level 3 moisture sensitivity and supports peak reflow temperatures up to 260 °C. Recommended profile includes ramp rate ≤3 °C/s, 60–120 s above 217 °C, and cooling rate ≤6 °C/s.
CY62126EV30LL-45ZSXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62126EV30LL-45ZSXAT FAQ
1.How can I place an order for CY62126EV30LL-45ZSXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62126EV30LL-45ZSXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62126EV30LL-45ZSXAT reliable?
The price and inventory of CY62126EV30LL-45ZSXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126EV30LL-45ZSXAT is usually 5 days.
3.What payment methods are accepted for CY62126EV30LL-45ZSXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126EV30LL-45ZSXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62126EV30LL-45ZSXAT?
CY62126EV30LL-45ZSXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62126EV30LL-45ZSXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62126EV30LL-45ZSXAT?
For technical support, including CY62126EV30LL-45ZSXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126EV30LL-45ZSXAT requirements.
6.How does Aetrix verify that CY62126EV30LL-45ZSXAT is sourced from the original manufacturer or authorized distributors?
All CY62126EV30LL-45ZSXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126EV30LL-45ZSXAT meets industry standards.
7.What is the process for return or replacement of CY62126EV30LL-45ZSXAT?
All CY62126EV30LL-45ZSXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62126EV30LL-45ZSXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62126EV30LL-45ZSXAT part is unused and in its original packaging.
Return procedure for CY62126EV30LL-45ZSXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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