Infineon Technologies CY62126EV30LL-45ZSXI

Overview

CY62126EV30LL-45ZSXI from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-wide I/O (I/O0–I/O7 and I/O8–I/O15) for portable memory applications including cellular handsets and battery-powered instrumentation.

For engineers reviewing the CY62126EV30LL-45ZSXI datasheet, CY62126EV30LL-45ZSXI pinout, CY62126EV30LL-45ZSXI application, or CY62126EV30LL-45ZSXI equivalent, key selection criteria include its VFBGA-48 package compatibility, 16-bit data bus width, low-voltage operation down to 2.2 V, and guaranteed 45 ns read/write timing at industrial temperature.

Technical Context

The CY62126EV30LL-45ZSXI implements a fully static 64K × 16 SRAM array with independent byte enable control (BHE/ BLE), enabling selective high- and low-byte writes without external logic. Its CMOS architecture supports full rail-to-rail input thresholds and guarantees data retention at VCC ≥ 1.5 V.

It uses automatic power-down when CE is HIGH, reducing ICC to ≤4 µA (ISB2), and transitions outputs to high-impedance during deselect, OE HIGH, or write cycles. All timing parameters-including tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns-are specified over the full industrial voltage and temperature range.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (Very Fine Pitch Ball Grid Array), 6 × 8 mm, 0.5 mm pitch, bottom-side thermal pad. Pinout conforms to JEDEC MO-249AA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-45NLI, CY62126EV30LL-45ZSXI offers superior board-level miniaturization via VFBGA-48; versus NVMFS16M16T04G, it delivers lower quiescent power and faster random access-ideal where volatility is acceptable and battery life is critical.

Availability

CY62126EV30LL-45ZSXI is available at Aetrix Electronics and suitable for cellular handset memory, portable medical monitor buffers, and industrial PLC I/O caches requiring stable component supply and long-term lifecycle support.

Supply support for CY62126EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and automotive markets.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and small footprint are primary design constraints.

FAQ

What is the maximum clock frequency supported by CY62126EV30LL-45ZSXI?

The CY62126EV30LL-45ZSXI is a static RAM and does not use a clock signal. Its timing is governed by asynchronous control signals (CE, OE, WE, BHE, BLE). The maximum toggle rate is determined by tRC = 45 ns, allowing up to ~22.2 MHz sustained random access cycles under ideal conditions, though system-level bus arbitration typically limits practical throughput.

Can CY62126EV30LL-45ZSXI operate reliably at 2.2 V across the full industrial temperature range?

Yes. Electrical characteristics-including tRC = 45 ns, ISB2 ≤ 4 µA, and VIH/VIL thresholds-are fully specified and tested over 2.2 V to 3.6 V and –40 °C to +85 °C. The device meets all AC and DC parametric limits at minimum VCC within this temperature range per datasheet Rev. *H, Table "Operating Range" and "Electrical Characteristics".

Is the VFBGA-48 package RoHS and lead-free compliant?

Yes. The "ZSXI" suffix denotes a Pb-free, halogen-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish. It satisfies JEDEC J-STD-020D moisture sensitivity level 3 (MSL-3) and supports standard reflow profiles up to 260 °C peak.

How does automatic power-down behave when CE is held HIGH but OE or BHE/ BLE toggle?

When CE is HIGH, the device enters automatic power-down mode regardless of OE, BHE, or BLE state. Outputs go high-impedance, and ICC drops to ISB2 (≤4 µA). Toggling OE or BHE/ BLE while CE is HIGH has no effect on power state or data integrity-only CE controls entry/exit from standby.