Infineon Technologies CY62126EV30LL-45ZSXIT

Overview

CY62126EV30LL-45ZSXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-wide I/O control via BHE/ BLE for embedded memory expansion in portable electronics.

For engineers reviewing the CY62126EV30LL-45ZSXIT datasheet, CY62126EV30LL-45ZSXIT pinout, CY62126EV30LL-45ZSXIT application, or CY62126EV30LL-45ZSXIT equivalent, this SRAM delivers verified low-power MoBL® operation, pin compatibility with CY62126DV30, and dual-package support (48-ball VFBGA / 44-pin TSOP II) for space-constrained portable designs.

Technical Context

The CY62126EV30LL-45ZSXIT implements a fully static 64K × 16 RAM array with independent byte enable (BHE/ BLE) logic, enabling selective high- or low-byte writes without external gating. Its CMOS architecture ensures zero refresh requirement and deterministic timing across full voltage and temperature ranges.

Automatic power-down activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA (ISB2). Output drivers enter high-impedance state during deselect (CE HIGH), OE HIGH, or write cycles (WE LOW), supporting bus sharing and multi-drop memory configurations.

Key Specifications

Pinout & Package

Package: 48-ball very fine pitch ball grid array (VFBGA), 6.0 mm × 8.0 mm, 0.5 mm pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-45NLI and CY62126DV30LL-45ZSXI, the CY62126EV30LL-45ZSXIT uniquely combines 2.2 V operation, 1 µA standby, and VFBGA packaging-making it the only choice for next-gen portable and automotive edge nodes demanding minimum power and maximum density.

Availability

CY62126EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial HMI panels, automotive infotainment head units, and wireless sensor node gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62126EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for embedded systems.

The CY62126EV30 belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated applications where extended runtime and small form factor are critical design constraints.

FAQ

What is the minimum VCC required to retain data in CY62126EV30LL-45ZSXIT?

The device guarantees data retention down to VDR = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial conditions. Operation below 2.2 V is not supported for active read/write cycles, but data hold is maintained during brown-out events or battery sag scenarios meeting the 1.5 V threshold.

Does CY62126EV30LL-45ZSXIT require an external clock or refresh signal?

No. As a static RAM, CY62126EV30LL-45ZSXIT has no clock input and requires zero refresh cycles. Data remains valid indefinitely as long as VCC ≥ 1.5 V and CE is held HIGH during retention mode. All timing is asynchronous and controlled solely by CE, OE, WE, and BHE/ BLE transitions.

Can I use only the low byte (I/O0–I/O7) while leaving BHE floating?

No. BHE must be actively driven-either HIGH (to disable high byte) or LOW (to enable)-as floating inputs violate the absolute maximum rating for VIH/VIL. Per datasheet Note 7, unused byte enables should be tied to VCC (for disable) or GND (for enable) using pull-up/down resistors to ensure CMOS-level logic states and prevent increased ICC.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes. The Pb-free VFBGA adheres to IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C. Cypress recommends a ramp-to-spike profile with 60–120 sec above 217 °C and cooling rate ≤6 °C/sec. Board layout must follow recommended solder mask defined pads and thermal relief for VCC/VSS balls.