Infineon Technologies CY62126EV30LL-55BVXET
- Part No.:
- CY62126EV30LL-55BVXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62126EV30LL-55BVXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62126EV30LL-55BVXET from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-wide I/O (I/O0–I/O7 and I/O8–I/O15) for selective data access in portable memory subsystems.
For engineers reviewing the CY62126EV30LL-55BVXET datasheet, CY62126EV30LL-55BVXET pinout, CY62126EV30LL-55BVXET application, or CY62126EV30LL-55BVXET equivalent, key selection criteria include its VFBGA-48 package compatibility, 16-bit data bus width, low-voltage operation down to 2.2 V, and guaranteed 55 ns timing under industrial conditions.
Technical Context
The CY62126EV30LL-55BVXET implements a full CMOS SRAM array with independent byte enable (BHE/ BLE) control, enabling partial-word writes without disturbing adjacent bytes. Its automatic power-down logic activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA.
It supports asynchronous read/write operations with separate OE, WE, CE, and byte-enable timing paths. All switching parameters-including tACE (55 ns), tDOE (25 ns), and tHZOE (20 ns)-are specified over the full industrial voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16 bits - provides 128 KB of nonvolatile-accessible storage with parallel 16-bit data bus |
| Access Time | 55 ns - guarantees maximum read latency at worst-case industrial conditions (VCC = 2.2 V, TA = +85 °C) |
| Supply Voltage | 2.2 V to 3.6 V - enables direct interfacing with 2.5 V and 3.3 V logic domains without level translation |
| Standby Current | 1 µA typical / 4 µA max - reduces battery drain in always-on sleep states for portable devices |
| Active Current | 1.3 mA typical at 1 MHz - supports low-power continuous polling or burst reads in handheld systems |
| Data Retention Voltage | 1.5 V min - maintains stored data during brown-out or backup-battery operation |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and instrumentation applications |
Pinout & Package
Package: 48-ball VFBGA (5 mm × 6 mm, 0.5 mm pitch), JEDEC MO-276AA compliant, RoHS-compliant and Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus selecting one of 64K memory locations |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE LOW during read/write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces device into automatic power-down mode when HIGH |
| OE | Output Enable | Active-LOW control for output drivers; places I/O pins in high-Z when HIGH |
| WE | Write Enable | Active-LOW signal initiating write cycle when CE and byte-enable are also asserted |
| BHE | Byte High Enable | Active-LOW control for upper byte (I/O8–I/O15); allows partial-word writes |
| BLE | Byte Low Enable | Active-LOW control for lower byte (I/O0–I/O7); enables selective byte access |
| VCC | Power Supply | Primary 2.2–3.6 V core and I/O supply; two dedicated VCC balls for noise reduction |
| VSS | Ground | Digital ground reference; two dedicated VSS balls for return path integrity |
| NC | No Connect | Unbonded pads-must be left floating or tied to ground per board layout best practices |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 1.3 mA at 1 MHz and standby to 1 µA-enables multi-week battery life in always-on sensors |
| Automatic CE-Controlled Power-Down | Eliminates external power management logic; cuts power >99% when CE is HIGH and addresses stable |
| Independent Byte Enables (BHE/ BLE) | Enables true 8-bit sub-word writes without read-modify-write cycles-critical for efficient firmware updates |
| Wide Voltage Operation (2.2–3.6 V) | Supports single-supply designs across 2.5 V and 3.3 V systems-reduces BOM count and PCB layer count |
| VFBGA-48 Footprint Compatibility | Matches industry-standard 5×6 mm layout; enables drop-in replacement for legacy low-power SRAMs in space-constrained modules |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Continuous ECG waveform capture in battery-powered wearable monitors with 24-hour runtime requirement. IC Role / Device Role / Timing Role: Primary data buffer storing real-time analog-to-digital samples before Bluetooth transmission. Use Value: 1 µA standby current extends battery life; 55 ns access enables real-time buffering at 10 kSPS without CPU intervention. | Use Scenario: Local history logging in DIN-rail mounted programmable logic controllers operating in factory environments. IC Role / Device Role / Timing Role: Nonvolatile-accessible scratchpad memory for retaining process variables during brief AC outages. Use Value: 1.5 V data retention threshold ensures reliable state preservation during brown-out events down to backup rail voltage. |
| Automotive Infotainment UI Cache | Wireless IoT Edge Node Memory |
Use Scenario: Caching touch-screen GUI assets and voice command buffers in head-unit systems with thermal constraints. IC Role / Device Role / Timing Role: Low-heat, low-noise SRAM supporting rapid UI rendering while minimizing thermal dissipation near display drivers. Use Value: 2.2 V minimum VCC allows operation during cold-cranking; 58.85 °C/W θJA enables passive cooling in sealed enclosures. | Use Scenario: Storing sensor fusion outputs and encrypted packet headers in LoRaWAN end-nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Energy-efficient working memory for ARM Cortex-M0+ microcontrollers executing duty-cycled measurement routines. Use Value: Byte-enable capability reduces write energy by 50% vs. full-word writes-extending 10-year battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 64K × 16 SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV6416BLL-55NLI | 55 ns access, same 64K × 16 organization, but requires 3.0–3.6 V only; no 2.2 V support | Lacks low-voltage operation-unsuitable for battery-critical or cold-cranking automotive use | Select if system operates strictly at 3.3 V and cost is primary driver; verify thermal derating above 85 °C |
| AS6C1008-55TIN | 55 ns access, 128K × 8 organization; different data bus width and pinout; no byte enables | Requires software rework for 16-bit interface; no hardware-level byte masking | Choose only when migrating from 8-bit microcontrollers or when higher density justifies redesign effort |
Compared with IS62WV6416BLL-55NLI and AS6C1008-55TIN, the CY62126EV30LL-55BVXET uniquely delivers 2.2 V operation, integrated byte enables, and industrial-qualified VFBGA packaging-making it optimal for space- and power-constrained embedded systems requiring flexible voltage and partial-word access.
Availability
CY62126EV30LL-55BVXET is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and automotive infotainment UI cache applications requiring stable component supply and long-term lifecycle assurance.
Supply support for CY62126EV30LL-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and consumer electronics, with emphasis on low-power innovation and system integration.
The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications-delivering ultra-low standby current, wide voltage operation, and compact packaging without sacrificing speed or reliability.
FAQ
What is the minimum VCC required to retain data in CY62126EV30LL-55BVXET?
The device guarantees data retention down to 1.5 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial conditions. This enables operation from backup batteries or supercapacitors during main power loss, provided CE is held HIGH and inputs are within valid logic thresholds.
Can CY62126EV30LL-55BVXET operate reliably at 2.2 V across the full industrial temperature range?
Yes. The datasheet specifies all AC and DC parameters-including 55 ns access time, 1.3 mA active current, and 4 µA max standby current-at VCC = 2.2 V and TA = –40 °C to +85 °C. No derating or external compensation is required for full functionality at minimum supply voltage.
How does automatic power-down activate, and what signals must be controlled?
Automatic power-down engages when CE is HIGH and all address inputs (A0–A15) are stable (no toggling). Input levels on OE, WE, BHE, and BLE do not affect entry-only CE and address stability matter. Outputs enter high-Z immediately, and ICC drops to ≤4 µA without requiring external sequencing logic.
Is the VFBGA-48 package of CY62126EV30LL-55BVXET compatible with standard reflow profiles?
Yes. The device is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C. Thermal resistance values (θJA = 58.85 °C/W, θJC = 17.01 °C/W) are measured on a 2-layer PCB per JEDEC standards, confirming manufacturability in high-volume SMT lines.
CY62126EV30LL-55BVXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62126EV30LL-55BVXET FAQ
1.How can I place an order for CY62126EV30LL-55BVXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62126EV30LL-55BVXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62126EV30LL-55BVXET reliable?
The price and inventory of CY62126EV30LL-55BVXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126EV30LL-55BVXET is usually 5 days.
3.What payment methods are accepted for CY62126EV30LL-55BVXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126EV30LL-55BVXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62126EV30LL-55BVXET?
CY62126EV30LL-55BVXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62126EV30LL-55BVXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62126EV30LL-55BVXET?
For technical support, including CY62126EV30LL-55BVXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126EV30LL-55BVXET requirements.
6.How does Aetrix verify that CY62126EV30LL-55BVXET is sourced from the original manufacturer or authorized distributors?
All CY62126EV30LL-55BVXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126EV30LL-55BVXET meets industry standards.
7.What is the process for return or replacement of CY62126EV30LL-55BVXET?
All CY62126EV30LL-55BVXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62126EV30LL-55BVXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62126EV30LL-55BVXET part is unused and in its original packaging.
Return procedure for CY62126EV30LL-55BVXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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