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Infineon Technologies CY62126EV30LL-55BVXET

Part No.:
CY62126EV30LL-55BVXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62126EV30LL-55BVXET.pdf
Description:
IC SRAM 1MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,819

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Product details

Overview

CY62126EV30LL-55BVXET from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-wide I/O (I/O0–I/O7 and I/O8–I/O15) for selective data access in portable memory subsystems.

For engineers reviewing the CY62126EV30LL-55BVXET datasheet, CY62126EV30LL-55BVXET pinout, CY62126EV30LL-55BVXET application, or CY62126EV30LL-55BVXET equivalent, key selection criteria include its VFBGA-48 package compatibility, 16-bit data bus width, low-voltage operation down to 2.2 V, and guaranteed 55 ns timing under industrial conditions.

Technical Context

The CY62126EV30LL-55BVXET implements a full CMOS SRAM array with independent byte enable (BHE/ BLE) control, enabling partial-word writes without disturbing adjacent bytes. Its automatic power-down logic activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA.

It supports asynchronous read/write operations with separate OE, WE, CE, and byte-enable timing paths. All switching parameters-including tACE (55 ns), tDOE (25 ns), and tHZOE (20 ns)-are specified over the full industrial voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) range.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization64K × 16 bits - provides 128 KB of nonvolatile-accessible storage with parallel 16-bit data bus
Access Time55 ns - guarantees maximum read latency at worst-case industrial conditions (VCC = 2.2 V, TA = +85 °C)
Supply Voltage2.2 V to 3.6 V - enables direct interfacing with 2.5 V and 3.3 V logic domains without level translation
Standby Current1 µA typical / 4 µA max - reduces battery drain in always-on sleep states for portable devices
Active Current1.3 mA typical at 1 MHz - supports low-power continuous polling or burst reads in handheld systems
Data Retention Voltage1.5 V min - maintains stored data during brown-out or backup-battery operation
Operating Temperature–40 °C to +85 °C - qualified for industrial-grade embedded control and instrumentation applications

Pinout & Package

Package: 48-ball VFBGA (5 mm × 6 mm, 0.5 mm pitch), JEDEC MO-276AA compliant, RoHS-compliant and Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus selecting one of 64K memory locations
I/O0–I/O7Data Bus (Low Byte)Bi-directional 8-bit data path enabled by BLE LOW during read/write
I/O8–I/O15Data Bus (High Byte)Bi-directional 8-bit data path enabled by BHE LOW during read/write
CEChip EnableActive-LOW global select; forces device into automatic power-down mode when HIGH
OEOutput EnableActive-LOW control for output drivers; places I/O pins in high-Z when HIGH
WEWrite EnableActive-LOW signal initiating write cycle when CE and byte-enable are also asserted
BHEByte High EnableActive-LOW control for upper byte (I/O8–I/O15); allows partial-word writes
BLEByte Low EnableActive-LOW control for lower byte (I/O0–I/O7); enables selective byte access
VCCPower SupplyPrimary 2.2–3.6 V core and I/O supply; two dedicated VCC balls for noise reduction
VSSGroundDigital ground reference; two dedicated VSS balls for return path integrity
NCNo ConnectUnbonded pads-must be left floating or tied to ground per board layout best practices

Key Features

FeatureDesign Value
MoBL® Ultra-Low Power ArchitectureReduces active current to 1.3 mA at 1 MHz and standby to 1 µA-enables multi-week battery life in always-on sensors
Automatic CE-Controlled Power-DownEliminates external power management logic; cuts power >99% when CE is HIGH and addresses stable
Independent Byte Enables (BHE/ BLE)Enables true 8-bit sub-word writes without read-modify-write cycles-critical for efficient firmware updates
Wide Voltage Operation (2.2–3.6 V)Supports single-supply designs across 2.5 V and 3.3 V systems-reduces BOM count and PCB layer count
VFBGA-48 Footprint CompatibilityMatches industry-standard 5×6 mm layout; enables drop-in replacement for legacy low-power SRAMs in space-constrained modules

Applications

Portable Medical SensorsIndustrial PLC Data Buffers

Use Scenario: Continuous ECG waveform capture in battery-powered wearable monitors with 24-hour runtime requirement.

IC Role / Device Role / Timing Role: Primary data buffer storing real-time analog-to-digital samples before Bluetooth transmission.

Use Value: 1 µA standby current extends battery life; 55 ns access enables real-time buffering at 10 kSPS without CPU intervention.

Use Scenario: Local history logging in DIN-rail mounted programmable logic controllers operating in factory environments.

IC Role / Device Role / Timing Role: Nonvolatile-accessible scratchpad memory for retaining process variables during brief AC outages.

Use Value: 1.5 V data retention threshold ensures reliable state preservation during brown-out events down to backup rail voltage.

Automotive Infotainment UI CacheWireless IoT Edge Node Memory

Use Scenario: Caching touch-screen GUI assets and voice command buffers in head-unit systems with thermal constraints.

IC Role / Device Role / Timing Role: Low-heat, low-noise SRAM supporting rapid UI rendering while minimizing thermal dissipation near display drivers.

Use Value: 2.2 V minimum VCC allows operation during cold-cranking; 58.85 °C/W θJA enables passive cooling in sealed enclosures.

Use Scenario: Storing sensor fusion outputs and encrypted packet headers in LoRaWAN end-nodes powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Energy-efficient working memory for ARM Cortex-M0+ microcontrollers executing duty-cycled measurement routines.

Use Value: Byte-enable capability reduces write energy by 50% vs. full-word writes-extending 10-year battery life targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 64K × 16 SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS62WV6416BLL-55NLI55 ns access, same 64K × 16 organization, but requires 3.0–3.6 V only; no 2.2 V supportLacks low-voltage operation-unsuitable for battery-critical or cold-cranking automotive useSelect if system operates strictly at 3.3 V and cost is primary driver; verify thermal derating above 85 °C
AS6C1008-55TIN55 ns access, 128K × 8 organization; different data bus width and pinout; no byte enablesRequires software rework for 16-bit interface; no hardware-level byte maskingChoose only when migrating from 8-bit microcontrollers or when higher density justifies redesign effort

Compared with IS62WV6416BLL-55NLI and AS6C1008-55TIN, the CY62126EV30LL-55BVXET uniquely delivers 2.2 V operation, integrated byte enables, and industrial-qualified VFBGA packaging-making it optimal for space- and power-constrained embedded systems requiring flexible voltage and partial-word access.

Availability

CY62126EV30LL-55BVXET is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and automotive infotainment UI cache applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY62126EV30LL-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and consumer electronics, with emphasis on low-power innovation and system integration.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications-delivering ultra-low standby current, wide voltage operation, and compact packaging without sacrificing speed or reliability.

FAQ

What is the minimum VCC required to retain data in CY62126EV30LL-55BVXET?

The device guarantees data retention down to 1.5 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial conditions. This enables operation from backup batteries or supercapacitors during main power loss, provided CE is held HIGH and inputs are within valid logic thresholds.

Can CY62126EV30LL-55BVXET operate reliably at 2.2 V across the full industrial temperature range?

Yes. The datasheet specifies all AC and DC parameters-including 55 ns access time, 1.3 mA active current, and 4 µA max standby current-at VCC = 2.2 V and TA = –40 °C to +85 °C. No derating or external compensation is required for full functionality at minimum supply voltage.

How does automatic power-down activate, and what signals must be controlled?

Automatic power-down engages when CE is HIGH and all address inputs (A0–A15) are stable (no toggling). Input levels on OE, WE, BHE, and BLE do not affect entry-only CE and address stability matter. Outputs enter high-Z immediately, and ICC drops to ≤4 µA without requiring external sequencing logic.

Is the VFBGA-48 package of CY62126EV30LL-55BVXET compatible with standard reflow profiles?

Yes. The device is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C. Thermal resistance values (θJA = 58.85 °C/W, θJC = 17.01 °C/W) are measured on a 2-layer PCB per JEDEC standards, confirming manufacturability in high-volume SMT lines.

CY62126EV30LL-55BVXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62126EV30LL-55BVXET FAQ

1.How can I place an order for CY62126EV30LL-55BVXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62126EV30LL-55BVXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62126EV30LL-55BVXET reliable?

The price and inventory of CY62126EV30LL-55BVXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126EV30LL-55BVXET is usually 5 days.

3.What payment methods are accepted for CY62126EV30LL-55BVXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126EV30LL-55BVXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62126EV30LL-55BVXET?

CY62126EV30LL-55BVXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62126EV30LL-55BVXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62126EV30LL-55BVXET?

For technical support, including CY62126EV30LL-55BVXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126EV30LL-55BVXET requirements.

6.How does Aetrix verify that CY62126EV30LL-55BVXET is sourced from the original manufacturer or authorized distributors?

All CY62126EV30LL-55BVXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126EV30LL-55BVXET meets industry standards.

7.What is the process for return or replacement of CY62126EV30LL-55BVXET?

All CY62126EV30LL-55BVXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62126EV30LL-55BVXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62126EV30LL-55BVXET part is unused and in its original packaging.

Return procedure for CY62126EV30LL-55BVXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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