Infineon Technologies CY62126EV30LL-55ZSXE

Overview

CY62126EV30LL-55ZSXE from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and dual-byte enable (BHE/ BLE) for flexible 8-bit or 16-bit data access. Used in portable embedded systems requiring battery longevity and deterministic timing.

For engineers reviewing the CY62126EV30LL-55ZSXE datasheet, CY62126EV30LL-55ZSXE pinout, CY62126EV30LL-55ZSXE application, or CY62126EV30LL-55ZSXE equivalent, key selection criteria include its 55 ns read cycle time, 1 µA ISB2 standby current at 3.6 V, TSOP II package compatibility, and byte-selectable I/O architecture for memory expansion in space-constrained designs.

Technical Context

The CY62126EV30LL-55ZSXE implements a full CMOS 64K × 16 SRAM array with independent high- and low-byte enables (BHE, BLE), enabling partial-word writes without external logic. Its automatic power-down activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA.

Timing is governed by asynchronous control: read operations require CE and OE LOW with WE HIGH; write operations require CE and WE LOW, with BHE or BLE selecting upper/lower byte. All switching parameters-including tRC = 55 ns, tDOE = 25 ns, and tHZOE = 20 ns-are specified over full voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 375 mil width, lead-free (Pb-free) finish. Pinout validated per Cypress datasheet 38-05486 Rev. *H, Figure 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-55NLI, CY62126EV30LL-55ZSXE delivers wider voltage flexibility and lower standby power; versus CY62126DV30LL-55ZSXI, it achieves 60% lower ISB2 while maintaining identical pinout and timing-making it the optimal upgrade for power-sensitive industrial designs.

Availability

CY62126EV30LL-55ZSXE is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, and wireless sensor node gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62126EV30LL-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.

The MoBL® (More Battery Life) SRAM product line targets ultra-low-power embedded systems, emphasizing sub-µA standby current, wide voltage operation, and robust AC timing across temperature extremes.

FAQ

What is the maximum clock frequency supported by CY62126EV30LL-55ZSXE?

CY62126EV30LL-55ZSXE is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by access time: tRC = 55 ns, corresponding to a maximum effective cycle rate of ~18.2 MHz. System timing must satisfy all setup/hold constraints (e.g., tSA = 0 ns, tHA = 0 ns, tSD = 25 ns) relative to CE, OE, WE, and BHE/ BLE edges-not a system clock.

Can CY62126EV30LL-55ZSXE operate reliably at 2.2 V across the full industrial temperature range?

Yes. The device is fully specified for 2.2 V to 3.6 V operation over –40 °C to +85 °C. At 2.2 V and +85 °C, tRC remains ≤55 ns, ISB2 stays ≤4 µA, and VIH/VIL thresholds meet guaranteed levels (VIH ≥ 1.8 V, VIL ≤ 0.6 V). No derating is required per datasheet Table "Electrical Characteristics" and "Operating Range".

How does the automatic power-down feature interact with OE and BHE/ BLE signals?

Automatic power-down activates solely on CE HIGH state-regardless of OE, BHE, or BLE status. When CE is HIGH, ICC drops to ≤4 µA and all I/Os enter high-Z, even if OE is LOW or BHE/ BLE are asserted. OE and BHE/ BLE only affect output drivers during active (CE LOW) operation; they have no effect on power-down entry or exit.

Is the 44-pin TSOP II package of CY62126EV30LL-55ZSXE compatible with standard JEDEC reflow profiles?

Yes. The Pb-free TSOP II package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C for ≤60 seconds. Recommended profile includes ramp-up ≤3 °C/s, preheat 150–200 °C for 60–120 s, soak 200–220 °C for 60–120 s, and time above liquidus (TAL) 235–245 °C for 40–80 s.