Infineon Technologies CY62126EV30LL-55ZSXET
- Part No.:
- CY62126EV30LL-55ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62126EV30LL-55ZSXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:3,718
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Product details
Overview
CY62126EV30LL-55ZSXET from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and byte-level write enable (BHE/ BLE) for embedded memory expansion in portable electronics.
For engineers reviewing the CY62126EV30LL-55ZSXET datasheet, CY62126EV30LL-55ZSXET pinout, CY62126EV30LL-55ZSXET application, or CY62126EV30LL-55ZSXET equivalent, this SRAM supports low-power battery-operated systems requiring deterministic read/write timing, high-impedance I/O control during deselect, and pin-compatible migration from CY62126DV30.
Technical Context
The CY62126EV30LL-55ZSXET implements a fully static 64K × 16 asynchronous SRAM array with independent byte-enable logic for I/O0–I/O7 (BLE) and I/O8–I/O15 (BHE), enabling partial-word writes without external masking. Its CE-driven automatic power-down reduces ICC to ≤4 µA when CE is HIGH, and all I/Os enter high-impedance state under any of four conditions: CE HIGH, OE HIGH, BHE/ BLE HIGH, or WE LOW.
Timing is defined by fixed-cycle parameters: tRC = 55 ns (max), tAA = 55 ns (max), tDOE = 25 ns (max), and tHZOE = 20 ns (max). The device operates across full VCC range (2.2–3.6 V) with guaranteed VOH ≥ 2.0 V at IOH = –0.1 mA and VOL ≤ 0.4 V at IOL = 0.1 mA, supporting direct interfacing with 2.5 V and 3.3 V logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits - provides 128 KB addressable data space with parallel 16-bit bus interface |
| Access Time | 55 ns max - guarantees deterministic read latency for real-time firmware execution and buffer access |
| Supply Voltage | 2.2 V to 3.6 V - enables direct operation from single Li-ion cell (2.7–3.6 V) or regulated 2.5 V/3.3 V rails |
| Standby Current | 1 µA typical / 4 µA max - reduces quiescent power to <1 µW at 2.5 V, critical for always-on sleep modes |
| Active Current | 1.3 mA typical at 1 MHz - supports burst transfers with sub-mW average power in intermittent-use applications |
| Data Retention Voltage | 1.5 V min - allows retention during brown-out or backup-battery operation without external supervisor |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade reliability in uncontrolled ambient environments |
Pinout & Package
Package: 48-ball VFBGA (5 mm × 5 mm, 0.5 mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs | 16-bit address bus supporting full 64K-word decoding; no internal latching |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance when deselected or during write |
| CE | Chip Enable | Active-low global enable; drives automatic power-down and I/O high-Z when HIGH |
| OE | Output Enable | Active-low read control; output disabled (high-Z) when HIGH, regardless of CE state |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CE and WE both LOW |
| BHE, BLE | Byte High/Low Enable | Independent active-low controls for upper/lower 8-bit bytes; enable partial-word writes |
| VCC, VSS | Power and ground | Dual VCC pins and multiple VSS balls minimize IR drop and noise coupling in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low standby power | 1 µA typical ISB2 at 3.6 V - extends battery life in sleep-mode IoT sensors and wearables |
| Automatic CE power-down | Reduces ICC by >99% when CE HIGH - eliminates need for external power-gating circuitry |
| Byte-selectable write | Independent BHE/ BLE control - enables efficient 8-bit peripheral register updates without full 16-bit bus contention |
| High-impedance I/O control | I/Os go high-Z on CE HIGH, OE HIGH, BHE/ BLE HIGH, or WE LOW - prevents bus conflicts in multi-SRAM systems |
| Pb-free VFBGA packaging | 48-ball 5×5 mm VFBGA - supports high-density PCB layouts and automated reflow assembly |
Applications
| Wireless Sensor Node Memory | Industrial HMI Data Buffer |
|---|---|
Use Scenario: Low-power environmental sensor node logging temperature/humidity every 5 seconds using an ARM Cortex-M0+ MCU. IC Role / Device Role / Timing Role: External SRAM providing non-volatile data staging before RF transmission; accessed via GPIO-emulated parallel bus. Use Value: 1 µA standby current enables multi-year battery life; 55 ns access ensures timely buffering without CPU wait states. | Use Scenario: Touchscreen-based factory HMI storing GUI frame buffers and configuration tables. IC Role / Device Role / Timing Role: Shared-memory buffer between display controller and application processor; supports dual-port-like access via CE/OE arbitration. Use Value: Byte-enable capability allows selective update of widget states without rewriting entire frame buffer, reducing bus traffic by ~50%. |
| Portable Medical Monitor RAM | Automotive Diagnostic Tool Cache |
Use Scenario: Handheld ECG monitor acquiring 1 kS/s analog data and performing real-time FFT filtering. IC Role / Device Role / Timing Role: High-speed scratchpad memory for time-domain sample storage and coefficient lookup tables. Use Value: 55 ns tAA and 25 ns tDOE support continuous 1 MSps burst reads; 2.2–3.6 V range accommodates aging Li-Po battery discharge curve. | Use Scenario: OBD-II diagnostic tool caching vehicle-specific DTC definitions and calibration data across multiple ECUs. IC Role / Device Role / Timing Role: Static cache memory mapped into ARM9 processor's external bus interface; accessed via synchronous read cycles. Use Value: Industrial temp rating (–40 °C to +85 °C) ensures reliable operation inside vehicle cabin; CE-driven power-down cuts idle power during Bluetooth polling gaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns faster access (45 ns vs. 55 ns); higher ICC active (2.5 mA typ at 1 MHz); same 64K × 16 organization and VFBGA package | Requires tighter timing margins; not rated for extended temperature; better suited for high-throughput data loggers than battery-constrained devices | Select when system clock rate exceeds 12 MHz and thermal budget allows higher active power |
| CY62126DV30LL-45ZSXIT | Same die, 45 ns speed grade; identical pinout and feature set; automotive temp option (–40 °C to +125 °C) available | Higher cost; requires stricter layout for signal integrity at faster edge rates; no advantage in battery life due to identical ISB2 | Select only if design mandates <45 ns tRC or must meet AEC-Q100 Grade 2 requirements |
Compared with IS61LV25616AL-10TLI and CY62126DV30LL-45ZSXIT, the CY62126EV30LL-55ZSXET delivers optimal balance of ultra-low standby power, industrial temperature resilience, and proven layout compatibility-making it preferred for cost-sensitive, battery-powered industrial and medical edge devices where 55 ns latency is acceptable.
Availability
CY62126EV30LL-55ZSXET is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial HMIs, portable medical monitors, and automotive diagnostic tools requiring stable component supply across extended product lifecycles.
Supply support for CY62126EV30LL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics, with emphasis on low-power innovation and system integration.
The MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained applications, delivering ultra-low ISB and automatic power-down functionality without sacrificing access speed or interface flexibility.
FAQ
What is the minimum VCC required to retain data in CY62126EV30LL-55ZSXET?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial temperature conditions. This allows operation during brown-out events or from backup coin cells without external voltage supervision.
Can CY62126EV30LL-55ZSXET be used with a 2.5 V microcontroller without level shifting?
Yes. The SRAM's VIH(min) is 1.8 V at VCC = 2.2–2.7 V, and VOH is ≥2.0 V at IOH = –0.1 mA - fully compatible with standard 2.5 V CMOS logic thresholds. No level-shifting circuitry is needed for direct interface with 2.5 V MCUs such as STM32L4 or MSP430FRxx.
How does automatic power-down behave when CE is held HIGH but OE is toggled?
When CE is HIGH, the device enters automatic power-down regardless of OE state. OE toggling has no effect on power state or I/O impedance - all I/Os remain in high-impedance mode, and ICC remains ≤4 µA. OE only affects output drivers when CE is LOW.
Is the 48-ball VFBGA package of CY62126EV30LL-55ZSXET compatible with standard reflow profiles?
Yes. The Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 10–30 seconds. Thermal resistance values (θJA = 58.85 °C/W) confirm suitability for standard two-layer PCBs without additional heatsinking.
CY62126EV30LL-55ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62126EV30LL-55ZSXET FAQ
1.How can I place an order for CY62126EV30LL-55ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62126EV30LL-55ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62126EV30LL-55ZSXET reliable?
The price and inventory of CY62126EV30LL-55ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126EV30LL-55ZSXET is usually 5 days.
3.What payment methods are accepted for CY62126EV30LL-55ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126EV30LL-55ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62126EV30LL-55ZSXET?
CY62126EV30LL-55ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62126EV30LL-55ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62126EV30LL-55ZSXET?
For technical support, including CY62126EV30LL-55ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126EV30LL-55ZSXET requirements.
6.How does Aetrix verify that CY62126EV30LL-55ZSXET is sourced from the original manufacturer or authorized distributors?
All CY62126EV30LL-55ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126EV30LL-55ZSXET meets industry standards.
7.What is the process for return or replacement of CY62126EV30LL-55ZSXET?
All CY62126EV30LL-55ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62126EV30LL-55ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62126EV30LL-55ZSXET part is unused and in its original packaging.
Return procedure for CY62126EV30LL-55ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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