Infineon Technologies CY62127DV30L-55BVXE

Overview

CY62127DV30L-55BVXE from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features ultra-low active current (0.85 mA @ 1 MHz), automatic CE power-down (ISB2 ≤ 5 µA), and byte-wide I/O control via BHE/ BLE pins - deployed in portable telecom and embedded memory subsystems requiring battery longevity and pin-compatible upgrade paths.

For engineers reviewing the CY62127DV30L-55BVXE datasheet, CY62127DV30L-55BVXE pinout, CY62127DV30L-55BVXE application, or CY62127DV30L-55BVXE equivalent, key selection criteria include its 44-pin TSOP II package compatibility, MoBL® ultra-low-power architecture, dual-byte enable timing behavior, and data retention at 1.5 V - critical for handheld device memory retention during sleep modes.

Technical Context

The CY62127DV30L-55BVXE implements a synchronous, non-volatile-retentive SRAM array organized as 64K words × 16 bits, with independent high- and low-byte enables (BHE/BLE) enabling partial-word writes without bus contention. Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.

Read/write operations are controlled by CE, OE, WE, and byte-enable logic with defined setup/hold timing (e.g., tSA = 0 ns, tSD = 25 ns @ 55 ns speed grade). Output drivers support high-impedance tri-state control on all 16 I/O lines during deselect, OE HIGH, or write cycles - ensuring clean bus sharing in multi-peripheral systems.

Key Specifications

Pinout & Package

Package: 44-lead TSOP Type II (10.16 mm × 18.42 mm), lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV6416BLL-55NLI and CY62127BV30-55ZSXI, the CY62127DV30L-55BVXE uniquely delivers 2.2 V operation, 1.5 V data retention, and sub-1 mA active current - making it the sole choice for battery-constrained, wide-input-voltage industrial and medical edge devices.

Availability

CY62127DV30L-55BVXE is available at Aetrix Electronics and suitable for portable telecom terminals, industrial PLC data buffers, and automotive infotainment systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62127DV30L-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with headquarters in San Jose, CA.

The CY62127DV30 series belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-sensitive applications demanding ultra-low standby current and wide-voltage operation without performance trade-offs.

FAQ

What is the minimum VCC required to retain data in CY62127DV30L-55BVXE?

The device guarantees data retention down to 1.5 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR is ≤4 µA (industrial grade), and the chip enters data retention mode immediately upon VCC dropping below 1.5 V - no external control signals are needed to initiate retention.

How does automatic power-down activate, and what current does it draw?

Automatic power-down engages when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA (ISB2) at VCC = 3.6 V and TA = 85°C. This occurs without software intervention or additional control logic - the internal power-down circuit triggers within tPD = 55 ns after CE deassertion.

Can CY62127DV30L-55BVXE perform partial-byte writes without affecting adjacent bytes?

Yes - asserting only BLE (LOW) writes exclusively to I/O0–I/O7, while asserting only BHE (LOW) writes exclusively to I/O8–I/O15. The truth table confirms that when one byte enable is HIGH and the other LOW, only the selected byte is updated; the unselected byte remains unchanged and electrically isolated.

Is the 44-pin TSOP II package of CY62127DV30L-55BVXE pin-compatible with CY62127BV series?

Yes - the CY62127DV30L-55BVXE maintains identical pin mapping, signal definitions, and mechanical footprint with CY62127BV30-55ZSXI, including matching A0–A15, I/O0–I/O15, CE, OE, WE, BHE, and BLE assignments. NC and DNU pins align per datasheet Figure 2 (TSOP II top view).