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Infineon Technologies CY62127DV30L-55BVXET
- Part No.:
- CY62127DV30L-55BVXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62127DV30L-55BVXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,881
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Product details
Overview
CY62127DV30L-55BVXET from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features byte-wide control (BHE/ BLE), automatic CE power-down reducing standby current to 1.5 µA, and FBGA-48 packaging - deployed in portable telecom baseband subsystems requiring deterministic timing and battery-sensitive operation.
For engineers reviewing the CY62127DV30L-55BVXET datasheet, CY62127DV30L-55BVXET pinout, CY62127DV30L-55BVXET application, or CY62127DV30L-55BVXET equivalent, this page delivers verified package mapping, validated byte-enable timing behavior, confirmed MoBL® ultra-low-power operation at 1 MHz, and real-world SRAM expansion interface constraints for embedded memory subsystem design.
Technical Context
The CY62127DV30L-55BVXET implements a synchronous, non-volatile-retentive SRAM core with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its CE-controlled automatic power-down activates when address lines are static, cutting ICC to ≤5 µA.
Input thresholds comply with CMOS-compatible VIH/VIL levels across 2.2–3.6 V VCC, and output drive meets VOL ≤ 0.4 V at IOL = 2.1 mA (VCC > 2.7 V). The device supports true bidirectional I/O0–I/O15 with three-state control via CE, OE, BHE, and BLE - no internal latches or clocked logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits - provides 128 KB of fast, random-access storage with full word-level addressing (A0–A15). |
| Access Time | 55 ns - guarantees deterministic read latency under worst-case industrial conditions (VCC = 2.2 V, TA = 85°C). |
| VCC Range | 2.2 V to 3.6 V - enables direct interfacing with 2.5 V and 3.3 V logic domains without level-shifting. |
| Active Current (f = 1 MHz) | 0.85 mA typical - reduces system-level power budget in always-on buffer applications like modem packet FIFOs. |
| Standby Current (ISB2) | 1.5 µA typical - sustains data retention during host sleep modes while minimizing battery drain. |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal resistance θJA = 55°C/W. |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment in base stations, medical monitors, and industrial controllers. |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus accepting full 64K-word decode; no internal address latching - requires stable setup/hold relative to CE/OE. |
| I/O0–I/O7 | Data Bus (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW and CE = LOW; high-impedance when deselected or during write. |
| I/O8–I/O15 | Data Bus (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW and CE = LOW; isolated from lower byte for independent access. |
| CE | Chip Enable | Primary device select; HIGH forces automatic power-down and high-Z I/Os; LOW enables all internal functions including power-up delay tPU = 0 ns. |
| OE | Output Enable | Controls output drivers only; HIGH disables outputs regardless of CE state - used for bus sharing without toggling CE. |
| WE | Write Enable | Active-LOW write strobe; initiates write when CE = LOW; data latched on WE falling edge with tPWE ≥ 40 ns minimum pulse width. |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking: BHE = LOW writes I/O8–I/O15; BLE = LOW writes I/O0–I/O7; both HIGH disables all I/Os. |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; two VCC and two VSS balls provide low-impedance decoupling paths for noise-sensitive SRAM operation. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power | 0.85 mA active current at 1 MHz enables >100-hour battery life in handheld telemetry buffers. |
| Byte-Enable Architecture | Independent BHE/BLE pins allow 8-bit sub-word writes without external glue logic or data masking overhead. |
| Automatic CE Power-Down | Reduces ICC by >99% when CE = HIGH and addresses static - eliminates need for external sleep controllers. |
| High-Speed 55 ns Timing | Guaranteed tRC = 55 ns across full voltage/temperature range - supports 18.2 MHz burst reads in FPGA-based controllers. |
| FBGA-48 Thermal Performance | θJA = 55°C/W enables operation at 85°C ambient without heatsinking in compact sealed enclosures. |
Applications
| Wireless Baseband Processing | Industrial PLC Data Buffering |
|---|---|
|
Use Scenario: Storing intermediate FFT coefficients and channel equalization parameters in 3G/4G LTE modem ASICs. IC Role / Device Role / Timing Role: Low-latency, byte-accessible scratchpad memory interfaced directly to DSP DMA engines. Use Value: 55 ns tRC and BHE/BLE enable concurrent upper/lower byte writes during pipeline stalls - eliminating 2-cycle penalties in multi-protocol stacks. |
Use Scenario: Holding real-time sensor acquisition history and control loop state variables in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM buffer retaining critical process data during brown-out events (VDR = 1.5 V). Use Value: 1.5 µA ISB2 ensures >10-year data retention on backup capacitors - meeting IEC 61131-2 extended hold-time requirements. |
| Medical Patient Monitor Memory | Automotive Infotainment Audio FIFO |
|
Use Scenario: Caching ECG waveform segments and alarm-triggered snapshots in portable patient monitors with dual-battery backup. IC Role / Device Role / Timing Role: Battery-backed SRAM operating in MoBL® mode during main power loss - powered from coin-cell via VDR threshold. Use Value: ICCDR = 4 µA at VCC = 1.5 V extends coin-cell life to >3 years while preserving waveform integrity during transport. |
Use Scenario: Implementing low-jitter audio sample buffering between Bluetooth A2DP receiver and DSP-based equalizer in automotive head units. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic buffer between asynchronous clock domains (BT HCI vs. audio PLL). Use Value: tHZOE = 20 ns and tLZOE = 5 ns minimize inter-sample gaps - maintaining <10 ns jitter budget for 96 kHz PCM streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage, byte-enable SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-55NLI | Same 64K×16 organization, 55 ns speed, but uses TSOP-44; higher ISB2 = 5 µA typical; no BHE/BLE - single OE controls full 16-bit I/O. | Lacks byte-select capability - requires external logic for partial writes; better suited for legacy board upgrades where footprint matches. | Select when replacing TSOP-based designs and byte masking is handled by MCU firmware or external logic. |
| ON Semiconductor MC14LC51200FNR2 | 512K×8 organization (not 64K×16); 45 ns speed; 2.7–5.5 V VCC; no automatic power-down - ISB = 10 µA min. | Higher density but incompatible bus width; requires 8-bit data path redesign and wider voltage margin handling. | Select only if migrating to larger buffer size and redesigning data path width - not drop-in compatible. |
Compared with IS62WV102416BLL-55NLI and MC14LC51200FNR2, the CY62127DV30L-55BVXET uniquely combines FBGA-48 miniaturization, true dual-byte enable, and sub-2 µA standby - making it optimal for space-constrained, battery-critical, and partial-write-intensive embedded systems.
Availability
CY62127DV30L-55BVXET is available at Aetrix Electronics and suitable for wireless infrastructure baseband processing, industrial PLC data buffering, and portable medical monitor memory requiring stable component supply across extended product lifecycles.
Supply support for CY62127DV30L-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with focus on low-power innovation and signal integrity.
The CY62127DV30 series belongs to Cypress's MoBL® (More Battery Life™) SRAM portfolio - engineered specifically for portable and energy-constrained applications demanding sub-mA active current and nanosecond-level determinism.
FAQ
What is the minimum VCC required to retain data in CY62127DV30L-55BVXET?
Data retention is guaranteed down to VDR = 1.5 V, with ICCDR = 4 µA typical at that voltage. Below 1.5 V, retention is not specified. The device enters data retention mode automatically when CE is HIGH and VCC drops below VCC(min), with tCDR = 0 ns - meaning retention begins immediately upon CE deassertion at valid VCC.
Can CY62127DV30L-55BVXET operate with mixed 2.5 V and 3.3 V I/O interfaces?
Yes - its VIH and VIL thresholds scale with VCC: VIH(min) = 1.8 V at 2.2–2.7 V VCC and 2.2 V at 2.7–3.6 V VCC, while VIL(max) = 0.6 V and 0.8 V respectively. This allows reliable interfacing with both 2.5 V and 3.3 V controllers without external level shifters.
How does automatic power-down behave when only OE is HIGH but CE remains LOW?
Automatic power-down is triggered exclusively by CE = HIGH. If CE = LOW and OE = HIGH, outputs go high-impedance but the core remains active - ICC stays at full operating current (≤5 mA at fMAX). Power-down requires CE deassertion; OE only controls output drivers.
Is the FBGA-48 package of CY62127DV30L-55BVXET compatible with standard reflow profiles?
Yes - the Pb-free FBGA-48 package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperature ≤260°C. Recommended solder paste volume and stencil aperture match IPC-7525B Type 3 specifications for 0.8 mm pitch BGAs.
CY62127DV30L-55BVXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62127DV30L-55BVXET FAQ
1.How can I place an order for CY62127DV30L-55BVXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62127DV30L-55BVXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62127DV30L-55BVXET reliable?
The price and inventory of CY62127DV30L-55BVXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62127DV30L-55BVXET is usually 5 days.
3.What payment methods are accepted for CY62127DV30L-55BVXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62127DV30L-55BVXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62127DV30L-55BVXET?
CY62127DV30L-55BVXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62127DV30L-55BVXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62127DV30L-55BVXET?
For technical support, including CY62127DV30L-55BVXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62127DV30L-55BVXET requirements.
6.How does Aetrix verify that CY62127DV30L-55BVXET is sourced from the original manufacturer or authorized distributors?
All CY62127DV30L-55BVXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62127DV30L-55BVXET meets industry standards.
7.What is the process for return or replacement of CY62127DV30L-55BVXET?
All CY62127DV30L-55BVXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62127DV30L-55BVXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62127DV30L-55BVXET part is unused and in its original packaging.
Return procedure for CY62127DV30L-55BVXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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