Infineon Technologies CY62127DV30L-55ZSXE

Overview

CY62127DV30L-55ZSXE from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features ultra-low active current (0.85 mA @ 1 MHz), automatic CE power-down (ISB2 ≤ 5 µA), and byte-wide I/O control via BHE/ BLE for embedded memory expansion in portable and battery-sensitive systems.

For engineers reviewing the CY62127DV30L-55ZSXE datasheet, CY62127DV30L-55ZSXE pinout, CY62127DV30L-55ZSXE application, or CY62127DV30L-55ZSXE equivalent, key selection criteria include standby current at 3.6 V, TSOP II pin compatibility with CY62127BV, byte-select timing (tDBE = 55 ns), and data retention at 1.5 V.

Technical Context

The device implements a full CMOS 64K × 16 SRAM array with independent high- and low-byte enables (BHE, BLE), enabling partial-word writes without read-modify-write cycles. Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.

Input/output pins enter high-impedance state under four conditions: CE HIGH (deselect), OE HIGH (output disable), BHE/ BLE HIGH (byte disable), or during write (CE LOW & WE LOW). Read access requires CE and OE LOW with WE HIGH; write requires CE and WE LOW, with BHE/ BLE selecting upper/lower byte lanes.

Key Specifications

Pinout & Package

Package: 44-lead TSOP Type II (10.16 mm × 18.42 mm), RoHS-compliant, lead-free plating. Pin #23 is DNU (do not use) and must be left floating or tied to VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-55TLI and CY62127BV30-55ZSXI, CY62127DV30L-55ZSXE uniquely delivers 2.2 V operation, sub-1 mA active current, and industrial temperature support in a drop-in TSOP II footprint-enabling direct replacement where voltage scaling and battery life are critical.

Availability

CY62127DV30L-55ZSXE is available at Aetrix Electronics and suitable for portable medical devices, industrial HMIs, automotive gateways, and battery-powered communication equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62127DV30L-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for embedded systems.

This device belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and seamless voltage scalability are essential design constraints.

FAQ

What is the minimum VCC required to retain data in CY62127DV30L-55ZSXE?

The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR is ≤4 µA (industrial grade), allowing operation from backup batteries or supercapacitors during main power loss. Retention is valid across the full –40°C to +85°C temperature range without additional conditioning.

Can CY62127DV30L-55ZSXE be used with a 2.5 V microcontroller without level shifters?

Yes. Its 2.2–3.6 V supply range and TTL/CMOS-compatible input thresholds (VIH = 1.8 V min at 2.5 V) allow direct interfacing with 2.5 V logic families. Output VOH exceeds 2.0 V at 2.5 V VCC, ensuring noise margin compliance with standard 2.5 V receivers without translation circuitry.

How does automatic power-down activate, and what is its impact on I/O states?

Automatic power-down triggers when CE is HIGH or both BHE and BLE are HIGH. During this mode, all I/O pins (I/O0–I/O15) enter high-impedance state regardless of OE or WE status, and ICC drops to ≤5 µA. No external control signal is needed-the transition is fully hardware-managed within the SRAM core.

Is pin #23 on the TSOP II package required to be connected, and if so, how?

Pin #23 is designated DNU (Do Not Use) per the datasheet. It must be left electrically floating or tied to VSS (ground); connecting it to any active signal may cause undefined behavior. This pin has no internal connection and serves no functional purpose in normal operation.