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Infineon Technologies CY62127DV30L-55ZSXET
- Part No.:
- CY62127DV30L-55ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62127DV30L-55ZSXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,275
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Product details
Overview
CY62127DV30L-55ZSXET from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features automatic CE power-down, ultra-low standby current (1.5 µA typ), and byte-wide I/O control via BHE/ BLE for embedded memory expansion in portable and battery-powered systems.
For engineers reviewing the CY62127DV30L-55ZSXET datasheet, CY62127DV30L-55ZSXET pinout, CY62127DV30L-55ZSXET application, or CY62127DV30L-55ZSXET equivalent, this page delivers verified timing parameters, FBGA package mapping, byte-enable logic behavior, and MoBL®-optimized power metrics critical for portable SoC memory subsystem design.
Technical Context
The CY62127DV30L-55ZSXET implements a 64K × 16 asynchronous SRAM architecture with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its CE-controlled automatic power-down reduces ICC by >90% when addresses are static.
It supports true dual-byte operation: simultaneous or independent access to I/O0–I/O7 (low byte) and I/O8–I/O15 (high byte), with output enable (OE) and write enable (WE) fully decoupled from CE for flexible bus timing control in multi-master environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits - provides 128 KB of fast, non-refreshed storage for firmware buffers or real-time data logging |
| Access Time | 55 ns - ensures compatibility with 18 MHz system buses without wait states |
| Supply Voltage Range | 2.2 V to 3.6 V - supports direct interface with 2.5 V and 3.3 V logic domains and Li-ion battery discharge profiles |
| Active Current (f = 1 MHz) | 0.85 mA typ - enables multi-hour operation in always-on sensor nodes powered by coin cells |
| Standby Current (ISB2) | 1.5 µA typ - achieves >99% power reduction during sleep modes in portable medical devices |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment in factory automation controllers |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - enables high-density PCB layout with reduced trace inductance vs. TSOP |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.8 mm ball pitch. Pin #E3 is DNU (do not use); NC pins are unconnected to die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus supporting full 64K-word decoding; compatible with standard microcontroller address lines |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; isolated during high-byte operations |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; operates independently of low-byte activity |
| CE | Chip Enable | Active-LOW global select; triggers automatic power-down when HIGH and no address toggling occurs |
| OE | Output Enable | Active-LOW read control; places I/Os in high-Z when HIGH, regardless of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle only when CE and corresponding BHE/BLE are also LOW |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; allows partial-word writes without disturbing upper byte contents |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables concurrent or exclusive high-byte access |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 0.85 mA at 1 MHz and standby to 1.5 µA - extends battery life in handheld diagnostics tools |
| Automatic CE Power-Down | Reduces ICC by >90% when address lines are static - eliminates need for external sleep controllers in wearables |
| Independent Byte Enables (BHE/BLE) | Enables true 8-bit sub-word writes without read-modify-write overhead - improves firmware update efficiency in MCU-based edge nodes |
| High-Impedance Output Control | I/Os enter high-Z on CE HIGH, OE HIGH, BHE/BLE HIGH, or during write - prevents bus contention in shared-memory systems |
| Pb-Free & RoHS-Compliant FBGA | 48-ball package meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 - supports lead-free reflow without popcorn cracking |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Continuous acquisition of ECG waveforms in battery-powered patient monitors with local preprocessing and wireless upload. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer storing 10+ seconds of raw 16-bit samples prior to compression and transmission. Use Value: 55 ns access time enables real-time capture at 20 kSPS; 1.5 µA standby current preserves charge during idle periods between measurements. |
Use Scenario: Local data logging in DIN-rail mounted programmable logic controllers handling analog I/O scan cycles and HMI updates. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration tables and last-known sensor states across power cycles. Use Value: Industrial temp rating (–40°C to +85°C) ensures reliability in unconditioned control cabinets; byte-enable support simplifies firmware patching over Modbus RTU. |
| Wireless IoT Edge Nodes | Automotive Body Control Modules |
Use Scenario: Sub-GHz sensor hubs aggregating temperature, humidity, and motion data before scheduled LoRaWAN uplinks. IC Role / Device Role / Timing Role: Low-power SRAM staging buffer accumulating packets until RF link is established and RSSI threshold met. Use Value: 2.2–3.6 V operation matches Li-SOCl₂ battery discharge curve; automatic CE power-down cuts background draw below 2 µA during deep-sleep intervals. |
Use Scenario: Memory for EEPROM-emulation routines in door module ECUs managing window position learning and mirror calibration. IC Role / Device Role / Timing Role: Fast-access scratchpad for temporary storage of learned positions and fault logs during ignition cycles. Use Value: 55 ns access supports real-time response to CAN bus commands; FBGA package withstands automotive thermal cycling per AEC-Q200. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55NLI | Same 512K × 16 organization, 55 ns speed, but 2.5–3.6 V supply range; lacks automatic CE power-down | Requires external power management for low-power sleep; suitable where voltage rails are stable at 2.5 V+ | Select if board already uses ISSI's footprint and 2.5 V regulation is fixed |
| ON Semiconductor NVSRAM N25S80-55G | Non-volatile SRAM with integrated EEPROM backup; 55 ns access but higher standby current (10 µA typ) | Eliminates external backup battery or capacitor for data retention; adds 10 ms write-to-EEPROM latency on power loss | Select when data persistence across power failures is mandatory and 10 µA standby is acceptable |
Compared with IS62WV51216BLL-55NLI and N25S80-55G, the CY62127DV30L-55ZSXET uniquely combines MoBL®-grade ultra-low standby current (1.5 µA), automatic CE-triggered power-down, and full 2.2 V minimum operation - making it optimal for energy-constrained, wide-input-voltage portable designs where volatility is acceptable.
Availability
CY62127DV30L-55ZSXET is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and wireless IoT edge nodes requiring stable component supply across extended product lifecycles.
Supply support for CY62127DV30L-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.
The CY62127DV30 series targets low-power embedded systems needing fast, byte-selectable SRAM with minimal quiescent draw - specifically engineered for MoBL® (More Battery Life™) portable applications like handheld diagnostics and wearable telemetry.
FAQ
What is the maximum clock frequency supported for burst reads?
This is an asynchronous SRAM - it has no internal clock and does not support burst reads. Data access is controlled solely by CE, OE, and WE timing. The 55 ns access time defines the minimum interval between address setup and valid data output, allowing reliable interfacing with microcontrollers running up to ~18 MHz without wait states.
Can BHE and BLE be used simultaneously for full 16-bit access?
Yes - asserting both BHE and BLE LOW enables concurrent read or write of all 16 data bits (I/O0–I/O15). The truth table confirms "Read All bits" and "Data In" modes when both byte enables are active, with no timing penalty versus single-byte operation.
Is the 48-ball FBGA pinout compatible with CY62127BV-series TSOP packages?
No - the FBGA (CY62127DV30L-55ZSXET) and TSOP II (e.g., CY62127BV30L-55ZXI) have fundamentally different pinouts and ball/lead assignments. Though functionally pin-compatible in logic role, physical layout, signal routing, and thermal pad requirements differ significantly; PCB redesign is required for migration.
Does the device retain data during VCC brownout conditions?
Yes - data retention is guaranteed down to VCC = 1.5 V (VDR), with typical retention current of 4 µA at that voltage. The device enters data retention mode automatically when VCC drops below operational thresholds, provided CE remains HIGH and address lines are stable.
CY62127DV30L-55ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62127DV30L-55ZSXET FAQ
1.How can I place an order for CY62127DV30L-55ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62127DV30L-55ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62127DV30L-55ZSXET reliable?
The price and inventory of CY62127DV30L-55ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62127DV30L-55ZSXET is usually 5 days.
3.What payment methods are accepted for CY62127DV30L-55ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62127DV30L-55ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62127DV30L-55ZSXET?
CY62127DV30L-55ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62127DV30L-55ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62127DV30L-55ZSXET?
For technical support, including CY62127DV30L-55ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62127DV30L-55ZSXET requirements.
6.How does Aetrix verify that CY62127DV30L-55ZSXET is sourced from the original manufacturer or authorized distributors?
All CY62127DV30L-55ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62127DV30L-55ZSXET meets industry standards.
7.What is the process for return or replacement of CY62127DV30L-55ZSXET?
All CY62127DV30L-55ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62127DV30L-55ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62127DV30L-55ZSXET part is unused and in its original packaging.
Return procedure for CY62127DV30L-55ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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