Infineon Technologies CY62127DV30LL-55BVXIT

Overview

CY62127DV30LL-55BVXIT from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features byte-wide control (BHE/ BLE), automatic CE power-down, and ultra-low standby current (1.5 µA typ). Used in portable embedded systems requiring battery-efficient memory retention.

For engineers reviewing the CY62127DV30LL-55BVXIT datasheet, CY62127DV30LL-55BVXIT pinout, CY62127DV30LL-55BVXIT application, or CY62127DV30LL-55BVXIT equivalent, this page delivers verified timing parameters, FBGA package mapping, byte-enable memory architecture details, and real-world MoBL® power behavior for portable design validation.

Technical Context

The CY62127DV30LL-55BVXIT implements a 64K × 16 asynchronous SRAM array with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its dual-power-down modes-automatic CE-triggered (90% reduction) and full deselect (99% reduction)-are controlled by CMOS-compatible inputs with guaranteed VIH/VIL thresholds across 2.2–3.6 V.

Timing is defined by tRC = 55 ns, tAA = 55 ns, and tPD = 55 ns, with output enable propagation (tDOE = 25 ns) and high-impedance transitions (tHZOE = 20 ns, tLZOE = 5 ns) specified under 30 pF load. Data retention operates down to VDR = 1.5 V with ICCDR ≤ 3 µA at industrial temp.

Key Specifications

Pinout & Package

48-ball Fine-Pitch Ball Grid Array (FBGA) package, JEDEC MO-245 compliant, 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish. Balls arranged in 6×8 grid with corner balls missing (A1, A6, F1, F6 unpopulated); E3 is DNU (do not use), tied to VSS per datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS62WV51216BLL-55NLI and NVTFS1616M55, the CY62127DV30LL-55BVXIT uniquely delivers 2.2 V operation, 1.5 µA standby, and FBGA packaging-making it optimal for space-constrained, ultra-low-power portable designs where voltage headroom and leakage budget are critical.

Availability

CY62127DV30LL-55BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial data loggers, wireless sensor nodes, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for CY62127DV30LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer applications, with headquarters in San Jose, CA.

The CY62127DV30 series belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics requiring extended runtime and robust data retention at minimum voltage.

FAQ

What is the minimum VCC required to retain data in CY62127DV30LL-55BVXIT?

The device guarantees data retention down to VDR = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 3 µA under industrial temperature conditions, enabling long-term storage during brownout or battery depletion scenarios without external backup circuitry.

Can CY62127DV30LL-55BVXIT operate reliably at 2.2 V with 55 ns timing?

Yes-the datasheet explicitly specifies tRC = 55 ns, tAA = 55 ns, and all AC parameters over the full 2.2–3.6 V range. Electrical characteristics including VOH, VOL, and switching times are validated at VCC = 2.2 V, ensuring guaranteed timing compliance at minimum supply.

How does automatic CE power-down differ from full deselect mode?

Automatic CE power-down (ISB1) activates when CE is HIGH and addresses are static, reducing ICC by ~90%. Full deselect (ISB2) occurs when CE is HIGH *or* both BHE and BLE are HIGH, cutting ICC by >99% and placing all I/Os in high-Z. ISB2 is the lowest-power retention state.

Is the FBGA package of CY62127DV30LL-55BVXIT compatible with standard reflow profiles?

Yes-the 48-ball FBGA uses Pb-free solder and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Recommended peak reflow temperature is 260°C for 30 seconds max, with ramp rates and soak profiles matching standard lead-free processes for 0.8 mm pitch BGAs.