Infineon Technologies CY62127DV30LL-55ZXI

Overview

CY62127DV30LL-55ZXI from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features byte-wide control (BHE/ BLE), automatic CE power-down, and ultra-low standby current (1.5 µA typ). Used in portable embedded systems requiring battery-efficient memory retention.

For engineers reviewing the CY62127DV30LL-55ZXI datasheet, CY62127DV30LL-55ZXI pinout, CY62127DV30LL-55ZXI application, or CY62127DV30LL-55ZXI equivalent, key selection criteria include 44-pin TSOP II package compatibility, MoBL® low-power operation, byte-selectable I/O architecture, and guaranteed 55 ns read/write cycle timing at 3.6 V.

Technical Context

The CY62127DV30LL-55ZXI implements a synchronous, non-volatile-retentive SRAM array organized as 64K words × 16 bits, with independent high- and low-byte enables (BHE/BLE) enabling partial-word writes. Its power-down circuitry reduces ICC to ≤1.5 µA when CE is HIGH or both BHE and BLE are HIGH.

It supports three distinct operational states: active (CE/WE/OE controlled), output-disabled (OE HIGH), and automatic standby (CE HIGH or BHE/BLE HIGH), each with verified current draw (ICC = 5 mA max @ fMAX; ISB2 = 4 µA max). All I/O pins enter high-impedance during deselection or write cycles.

Key Specifications

Pinout & Package

44-lead Thin Small Outline Package (TSOP Type II), 400 mil body width, lead pitch 0.8 mm. Pin 1 marked by beveled corner; pin 23 designated DNU (do not use), must be left floating or tied to VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-55NLI, CY62127DV30LL-55ZXI delivers 2.2 V operation critical for battery longevity, while MC68HC11E9CP lacks external SRAM functionality entirely - making CY62127DV30LL-55ZXI the sole viable drop-in replacement for MoBL®-optimized designs.

Availability

CY62127DV30LL-55ZXI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, smart energy meters, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for CY62127DV30LL-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics, with headquarters in San Jose, CA.

CY62127DV30LL-55ZXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-backed applications where sub-µA standby and wide VCC range are mandatory.

FAQ

What is the maximum clock frequency supported by CY62127DV30LL-55ZXI?

CY62127DV30LL-55ZXI is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (55 ns max) and cycle time (55 ns read/write), supporting effective data throughput up to 18.2 MHz in burst mode. Timing is controlled solely by CE, OE, WE, and address setup/hold requirements per the datasheet truth table.

Can CY62127DV30LL-55ZXI operate at 2.5 V and still meet 55 ns timing?

Yes. The datasheet specifies 55 ns maximum access time across the full 2.2–3.6 V range, including 2.5 V. At 2.5 V, tAA, tACE, and tDOE remain within 55 ns limits under industrial temperature conditions (–40°C to +85°C), confirmed by characterization data in Table "Switching Characteristics" on page 5.

Is pin 23 of the TSOP II package required to be grounded?

No. Pin 23 is designated DNU (Do Not Use) and must be left floating or tied to VSS (ground) - both configurations are acceptable per datasheet Note 3. Tying it to VSS provides noise immunity; leaving it floating is electrically safe but may increase susceptibility to ESD coupling in high-noise environments.

Does CY62127DV30LL-55ZXI support true dual-port operation?

No. It is a single-port SRAM with one address bus and bidirectional I/O lines. While BHE/BLE enable simultaneous read/write to different bytes in theory, the shared address bus and common CE/OE/WE controls prevent concurrent independent access - unlike true dual-port SRAMs with separate read/write ports and arbitration logic.