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Infineon Technologies CY62127DV30LL-55ZXIT
- Part No.:
- CY62127DV30LL-55ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62127DV30LL-55ZXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,383
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Product details
Overview
CY62127DV30LL-55ZXIT from Cypress Semiconductor is a 1-Mb (64K × 16) low-voltage CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features automatic CE power-down (ISB2 ≤ 4 µA), byte-wide write enable (BHE/ BLE), and high-impedance I/O control-used in portable telecom baseband subsystems requiring battery-efficient memory buffering.
For engineers reviewing the CY62127DV30LL-55ZXIT datasheet, CY62127DV30LL-55ZXIT pinout, CY62127DV30LL-55ZXIT application, or CY62127DV30LL-55ZXIT equivalent, key selection criteria include standby current at 3.6 V, TSOP II pin compatibility with CY62127BV, byte-select timing margins, and MoBL®-optimized active power (0.85 mA @ 1 MHz).
Technical Context
The CY62127DV30LL-55ZXIT implements a synchronous 64K × 16 SRAM array with dual-byte enable architecture: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7. Its power-down circuit activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤4 µA.
Read operations require CE and OE LOW with WE HIGH; writes require CE and WE LOW, with byte selection determined by BHE/ BLE states. All I/O pins enter high-impedance during deselect, output disable, or write cycles-enabling clean bus sharing without external isolation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits - supports 128 KB data storage with parallel 16-bit bus interface |
| Access Time | 55 ns - guarantees deterministic read latency for real-time baseband processing |
| VCC Range | 2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V logic domains without level shifters |
| Active Current (f = 1 MHz) | 0.85 mA typical - enables >100-hour operation on coin-cell batteries in sleep-wake cycling |
| Standby Current (ISB2) | 4 µA max at 3.6 V - achieves >99% power reduction versus active mode |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded control and communications modules |
| Package | 44-lead TSOP Type II - surface-mount footprint with 0.8 mm pitch, JEDEC MO-141 compliant |
Pinout & Package
44-lead Thin Small Outline Package (TSOP Type II), 12.0 mm × 20.0 mm body, 0.8 mm lead pitch, standard JEDEC MO-141 footprint. Pin #23 is DNU (do not use) and must be left floating or tied to VSS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus supporting full 64K-word decoding; no internal latching |
| I/O0–I/O7 | Data Input/Output (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW during read/write |
| I/O8–I/O15 | Data Input/Output (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces all I/O into high-Z and triggers automatic power-down when HIGH |
| OE | Output Enable | Active-LOW read control; disables outputs (high-Z) when HIGH, independent of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| BLE | Byte Low Enable | Active-LOW control for lower byte (I/O0–I/O7); allows partial writes without disturbing upper byte |
| BHE | Byte High Enable | Active-LOW control for upper byte (I/O8–I/O15); enables independent 8-bit write granularity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 0.85 mA active current @ 1 MHz and 4 µA ISB2 enable battery-powered operation >100 hrs |
| Dual-Byte Write Control (BHE/ BLE) | Enables 8-bit sub-word writes without read-modify-write, reducing bus traffic and power in protocol stacks |
| Automatic CE Power-Down | Reduces ICC by >99% when CE is HIGH-no external control logic required for sleep-state entry |
| High-Impedance Output Management | I/O pins auto-enter high-Z on CE HIGH, OE HIGH, BHE/ BLE HIGH, or during write-eliminates bus contention |
| Pb-Free & RoHS-Compliant Packaging | 44-lead TSOP II meets EU Directive 2011/65/EU; compatible with standard reflow profiles |
Applications
| Cellular Baseband Subsystem | Industrial Data Logger |
|---|---|
|
Use Scenario: Real-time buffering of GSM/EDGE burst data between RF transceiver and DSP core. IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state data staging with 55 ns read latency. Use Value: Enables deterministic burst capture at 270 kbps without DMA overhead or FIFO overflow. |
Use Scenario: Non-volatile event logging in remote sensor nodes powered by solar-charged Li-ion cells. IC Role / Device Role / Timing Role: Low-leakage memory holding timestamped sensor readings during intermittent wake cycles. Use Value: 4 µA ISB2 draw extends battery life to >5 years in 1-minute sampling intervals. |
| Medical Wearable Controller | Automotive Body Control Module |
|
Use Scenario: Temporary storage of ECG waveform segments prior to Bluetooth LE transmission. IC Role / Device Role / Timing Role: Battery-optimized SRAM interfacing directly to 3.3 V MCU GPIO with byte-select write capability. Use Value: Dual-byte enables selective update of waveform metadata without rewriting full 16-bit samples. |
Use Scenario: Staging CAN message buffers in door module ECUs operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-temp SRAM providing deterministic 55 ns access for time-critical window control logic. Use Value: TSOP II package withstands thermal cycling; 2.2–3.6 V range accommodates automotive rail droop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55TLI | Same 64K × 16 organization, 55 ns speed, but 2.7–3.6 V VCC range (no 2.2 V support) | Lacks ultra-low 2.2 V operation; higher ISB2 (10 µA) limits battery runtime | Select if system uses stable 3.3 V rail and requires second-source availability |
| ON Semiconductor MC68HC11E9CP | Microcontroller with integrated 512-byte RAM-not a standalone SRAM; no byte-enable or 55 ns timing | Not functionally equivalent; lacks external bus interface and MoBL® power profile | Reject-incorrect device class; not a drop-in or functional substitute |
Compared with IS62WV51216BLL-55TLI, CY62127DV30LL-55ZXIT delivers wider voltage tolerance and 60% lower standby current, making it superior for energy-constrained designs; the MC68HC11E9CP is not a valid alternative due to architectural mismatch.
Availability
CY62127DV30LL-55ZXIT is available at Aetrix Electronics and suitable for cellular baseband subsystems, industrial data loggers, medical wearable controllers, and automotive body control modules requiring stable component supply across extended temperature ranges and low-power operation.
Supply support for CY62127DV30LL-55ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive qualification.
The CY62127DV30 series targets portable and industrial applications demanding MoBL®-class power efficiency and robust TSOP packaging-designed specifically for battery-sensitive communication and control subsystems.
FAQ
Is CY62127DV30LL-55ZXIT pin-compatible with CY62127BV?
Yes, CY62127DV30LL-55ZXIT is fully pin-compatible with CY62127BV in the same 44-lead TSOP II package. Signal assignments, pin numbering, and DC/AC electrical behavior match per datasheet Rev. *H, enabling direct replacement without PCB redesign.
What is the maximum clock frequency supported for continuous read/write cycling?
This is an asynchronous SRAM-no clock input exists. Maximum sustained operation is governed by tRC = 55 ns, permitting up to ~18.2 MHz random-access throughput. Continuous burst reads are limited only by address setup/hold and output enable timing.
Can BHE and BLE be used simultaneously for full 16-bit access?
Yes. When both BHE and BLE are LOW, the full 16-bit data bus (I/O0–I/O15) is enabled for simultaneous read or write. The truth table on page 8 confirms "Read All bits" and "Data In" modes under this condition.
Does CY62127DV30LL-55ZXIT support data retention below 2.2 V?
Yes-data retention is guaranteed down to VDR = 1.5 V, with ICCDR ≤ 3 µA. This allows safe hold-mode operation during brown-out conditions or battery depletion, preserving contents until VCC recovers above 2.2 V.
CY62127DV30LL-55ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62127DV30LL-55ZXIT FAQ
1.How can I place an order for CY62127DV30LL-55ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62127DV30LL-55ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62127DV30LL-55ZXIT reliable?
The price and inventory of CY62127DV30LL-55ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62127DV30LL-55ZXIT is usually 5 days.
3.What payment methods are accepted for CY62127DV30LL-55ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62127DV30LL-55ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62127DV30LL-55ZXIT?
CY62127DV30LL-55ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62127DV30LL-55ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62127DV30LL-55ZXIT?
For technical support, including CY62127DV30LL-55ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62127DV30LL-55ZXIT requirements.
6.How does Aetrix verify that CY62127DV30LL-55ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62127DV30LL-55ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62127DV30LL-55ZXIT meets industry standards.
7.What is the process for return or replacement of CY62127DV30LL-55ZXIT?
All CY62127DV30LL-55ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62127DV30LL-55ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62127DV30LL-55ZXIT part is unused and in its original packaging.
Return procedure for CY62127DV30LL-55ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62127DV30LL-55ZXIT Tags
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