Infineon Technologies CY62128BNLL-70SXAT

Overview

CY62128BNLL-70SXAT from Cypress Semiconductor is a 1-Mbit (128K × 8) low-power CMOS static RAM with 70 ns access time, 4.5–5.5 V operation, and industrial temperature range (–40°C to +85°C). It features dual chip enables (CE1 active-low, CE2 active-high), tri-state I/Os, automatic power-down, and TTL-compatible signaling. Used in embedded controllers, industrial PLCs, and legacy instrumentation requiring non-volatile SRAM retention during standby.

For engineers reviewing the CY62128BNLL-70SXAT datasheet, CY62128BNLL-70SXAT pinout, CY62128BNLL-70SXAT application, or CY62128BNLL-70SXAT equivalent, key selection criteria include its 70 ns read cycle time, 2.5 µA max standby current (ISB2), dual CE architecture for memory expansion, and Pb-free 32-pin SOIC package with 450-mil width.

Technical Context

The CY62128BNLL-70SXAT implements a full CMOS 128K × 8 asynchronous SRAM array with independent row/column decoding and sense amplifiers. Its dual CE interface (CE1 active-low, CE2 active-high) enables hierarchical memory mapping without external logic, while OE-controlled output enable allows clean bus sharing in multi-device systems.

Power management is handled via automatic CE-driven power-down: when CE1 is HIGH or CE2 is LOW, ICC drops to ≤2.5 µA (ISB2), reducing consumption by >75% versus active mode. All I/O pins enter high-impedance state during deselect, OE HIGH, or write cycles-ensuring signal integrity in shared-bus environments.

Key Specifications

Pinout & Package

Package: 32-pin Small Outline Integrated Circuit (SOIC), 450 mil width, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV1288BLL-70NLI and MC68HC11E9CP, the CY62128BNLL-70SXAT uniquely delivers 5 V tolerance, dual CE expansion capability, and industrial temperature compliance in a pin-compatible SOIC package-making it irreplaceable for maintaining legacy 5 V embedded designs without board rework.

Availability

CY62128BNLL-70SXAT is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, legacy embedded controllers, and test equipment requiring stable component supply across long production lifecycles.

Supply support for CY62128BNLL-70SXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY62128BN MoBL® (Mobile Binary Logic) SRAM product line was designed specifically for low-power, high-reliability embedded systems requiring fast, deterministic, and temperature-resilient volatile memory-especially where battery backup and long-term obsolescence mitigation are critical.

FAQ

What is the minimum VCC required for data retention on CY62128BNLL-70SXAT?

The device guarantees data retention down to VCC = 2.0 V (VDR), with maximum retention current ICCDR of 15 µA at –40°C to +85°C. This allows use with supercapacitor or lithium coin-cell backup circuits that decay below 3.0 V, provided CE1 is held HIGH or CE2 LOW to activate automatic power-down mode.

Can CY62128BNLL-70SXAT be used in a 3.3 V system?

No-CY62128BNLL-70SXAT is specified only for 4.5–5.5 V operation. Applying 3.3 V violates absolute maximum ratings and will result in undefined behavior, including failure to retain data or meet timing specifications. For 3.3 V systems, consider ISSI IS62WV1288BLL-70NLI or Alliance AS6C1008-70TIN instead.

How does the dual CE architecture improve memory expansion?

CE1 (active-low) and CE2 (active-high) allow hierarchical decoding: e.g., using a 2-to-4 decoder on higher address bits to drive CE2 of multiple CY62128BNLL-70SXAT devices, while CE1 remains tied to a common chip-select line. This eliminates external AND gates and reduces propagation delay versus single-CE schemes.

Is the 70 ns access time guaranteed over the full industrial temperature range?

Yes-the 70 ns maximum tAA (address-to-data-valid) and tRC (read cycle time) are fully characterized and guaranteed from –40°C to +85°C at VCC = 4.5 V to 5.5 V. No derating is required for industrial operation, unlike many competing SRAMs that specify speed only at 25°C.