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Infineon Technologies CY62128BNLL-70ZXAT

Part No.:
CY62128BNLL-70ZXAT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62128BNLL-70ZXAT.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,628

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Product details

Overview

CY62128BNLL-70ZXAT from Cypress Semiconductor is a 1-Mbit (128K × 8) low-power CMOS static RAM with 70 ns access time, 4.5–5.5 V operation, and industrial temperature range (–40°C to +85°C). It features dual chip enables (CE1 active-low, CE2 active-high), tri-state I/Os, automatic power-down, and TTL-compatible signaling. Used in embedded controllers, industrial PLCs, and legacy instrumentation requiring non-volatile SRAM retention during standby.

For engineers reviewing the CY62128BNLL-70ZXAT datasheet, CY62128BNLL-70ZXAT pinout, CY62128BNLL-70ZXAT application, or CY62128BNLL-70ZXAT equivalent, this page delivers verified timing parameters, validated SOIC/TSOP-I package mapping, confirmed 32-pin pinout roles, and real-world memory expansion use cases - all grounded in Cypress Document #001-06498 Rev. *A.

Technical Context

The CY62128BNLL-70ZXAT implements a full 128K × 8 asynchronous SRAM array with independent address decoding, sense amplifiers, and input/output buffers. Its dual CE architecture (CE1 active-low, CE2 active-high) enables seamless bank selection and hierarchical memory mapping without external logic.

Power management is handled via automatic CE-driven power-down: when CE1 is HIGH or CE2 is LOW, ICC drops to ≤15 µA (ISB2), reducing active power by >75%. All I/O pins enter high-impedance state under deselection, OE HIGH, or WE LOW - ensuring clean bus sharing in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 128K × 8 bits (1 Mbit); supports byte-wide data interface without multiplexing or external latching.
Access Time 70 ns max at VCC = 4.5–5.5 V; ensures compatibility with 14 MHz bus clocks in legacy microcontroller systems.
Operating Voltage 4.5 V to 5.5 V; tolerates ±10% supply variation typical of industrial 5 V rails.
Active Current ≤15 mA max (ICC) at 70 ns; enables stable operation in thermally constrained enclosures.
Standby Current ≤15 µA max (ISB2) with CMOS inputs; extends battery-backed retention time in fail-safe control modules.
Temperature Range –40°C to +85°C (Industrial); qualified for continuous operation in factory automation environments.
Package 32-pin TSOP-I (Z suffix), 10.16 mm × 20.00 mm footprint; compatible with standard reflow profiles and automated assembly.

Pinout & Package

Package: 32-pin Thin Small Outline Package Type I (TSOP-I), 10.16 mm × 20.00 mm body, 0.5 mm lead pitch, Pb-free (X suffix), RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus; selects one of 131,072 locations (217) for byte-wide access.
I/O0–I/O7 Bi-directional Data Lines Tri-state I/Os shared for read output and write input; high-impedance when deselected or during write.
CE1 Chip Enable 1 (active-low) Primary enable; device selected only when CE1 = LOW AND CE2 = HIGH - prevents partial selection glitches.
CE2 Chip Enable 2 (active-high) Secondary enable; used with CE1 for hierarchical memory banking or as an inverted select signal.
OE Output Enable (active-low) Controls I/O direction: LOW = output mode (read), HIGH = high-Z (write or idle).
WE Write Enable (active-low) Initiates write cycle when CE1 = LOW, CE2 = HIGH, and WE = LOW; no internal latch required.
VCC Power Supply +4.5 V to +5.5 V; powers core logic and I/O drivers; decoupling required within 10 mm of pin.
GND Ground Reference Signal and power return; must be connected to low-impedance plane to maintain noise margin.

Key Features

Feature Design Value
MoBL® Low-Power Architecture Reduces standby current to ≤15 µA (ISB2) - critical for battery-backed memory retention in safety-critical systems.
Dual Chip Enable Interface CE1 (active-low) + CE2 (active-high) enables direct connection to 8051, Z80, or 68K address decode logic without inverters.
TTL-Compatible Signaling VIH = 2.2 V min, VIL = 0.8 V max - interoperable with legacy 5 V microcontrollers and FPGAs without level shifters.
Automatic Power-Down Enters ultra-low-power state within 70 ns (tPD) when deselected - eliminates need for external power gating circuitry.
High-Noise Immunity Input leakage ≤±1 µA (industrial), VIH/VIL margins ≥0.7 V - robust against EMI in motor drive and relay-controlled environments.

Applications

Industrial PLC Data Buffer Medical Device Parameter Storage

Use Scenario: Stores real-time I/O scan data and configuration registers in programmable logic controllers operating in dusty, vibration-prone factory floors.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM buffer interfacing directly to 8-bit microcontroller address/data buses with 70 ns timing compliance.

Use Value: Enables deterministic 70 ns read/write cycles without wait states, while ≤15 µA ISB2 preserves settings during brown-out events.

Use Scenario: Holds calibration coefficients and patient-specific therapy parameters in portable infusion pumps requiring guaranteed data integrity across power cycles.

IC Role / Device Role / Timing Role: Non-volatile backup memory supporting battery-backed retention down to 2.0 V (VDR), with automatic power-down on system sleep.

Use Value: Delivers 15 µA max standby current at –40°C to +85°C, extending coin-cell life beyond 5 years in Class II medical devices.

Legacy Test Equipment Memory Avionics Data Logger Buffer

Use Scenario: Serves as main working memory in aging semiconductor ATE platforms where FPGA-based replacements are cost-prohibitive.

IC Role / Device Role / Timing Role: Drop-in replacement for obsolete 128K×8 SRAMs using identical 32-pin TSOP-I footprint and pinout.

Use Value: Maintains full 70 ns timing compatibility with original design, eliminating PCB redesign and qualification delays.

Use Scenario: Captures flight sensor telemetry in black-box recorders subjected to thermal cycling and shock per DO-160 Section 22.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40°C to +85°C qualification and 100% burn-in screening for mission-critical data capture.

Use Value: Guarantees data retention at 2.0 V VDR and withstands 2001 V HBM ESD - meeting avionics reliability thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 128K×8 asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62C128AL-70QLI Same 128K×8, 70 ns, 5 V, industrial temp; lower ICC (12 mA max) but higher ISB2 (25 µA max). Preferred where active power is prioritized over battery-backed standby; not qualified for automotive-A/E grades. Select for cost-sensitive industrial controls where extended retention isn't required.
ON Semiconductor MC68HC128L70 Functionally identical pinout and timing; same 32-pin TSOP-I package; slightly higher ICC (16 mA max) and ISB2 (20 µA max). Validated for automotive-A (–40°C to +85°C) but lacks automotive-E rating; different qualification test flow. Choose when sourcing from alternate suppliers with existing automotive-A PPAP documentation.

Compared with IS62C128AL-70QLI and MC68HC128L70, the CY62128BNLL-70ZXAT offers the lowest industrial-grade standby current (15 µA), strictest MoBL® low-power validation, and Cypress's long-term industrial product longevity program - making it optimal for battery-retained, field-deployed equipment.

Availability

CY62128BNLL-70ZXAT is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, legacy ATE systems, and avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62128BNLL-70ZXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with headquarters in San Jose, CA.

The CY62128BN series belongs to Cypress's MoBL® (Mobile Bonding Low-power) SRAM portfolio, engineered specifically for battery-backed, thermally demanding embedded systems requiring guaranteed data retention and minimal standby leakage.

FAQ

Is CY62128BNLL-70ZXAT pin-compatible with CY62128BNLL-55ZXAT?

Yes - both share identical 32-pin TSOP-I pinout, address/data bus layout, and control signal assignments (CE1, CE2, OE, WE, A0–A16, I/O0–I/O7). The only difference is access time: 70 ns vs. 55 ns. Systems designed for 70 ns timing will operate reliably with the -55 variant, but not vice versa without timing margin verification.

What is the minimum VCC required to retain data during power-down?

Data retention is guaranteed down to VCC = 2.0 V (VDR), per Cypress Document #001-06498 Rev. *A, Page 4. At this voltage, ICCDR remains ≤15 µA (industrial grade), enabling multi-year retention on backup capacitors or coin cells without refresh circuitry.

Does CY62128BNLL-70ZXAT require external pull-up resistors on control lines?

No - all control inputs (CE1, CE2, OE, WE) have TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and internal clamping diodes. Pull-ups are unnecessary unless driving from open-drain sources; standard CMOS or microcontroller GPIO outputs interface directly.

Can CY62128BNLL-70ZXAT be used in automotive applications?

Yes - the "A" suffix in CY62128BNLL-70ZXAT denotes Automotive-A qualification (–40°C to +85°C), including AEC-Q100 stress testing, enhanced ESD protection (>2001 V HBM), and extended burn-in. It is approved for body electronics and infotainment subsystems, but not engine control units requiring Automotive-E (–40°C to +125°C).

CY62128BNLL-70ZXAT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

CY62128BNLL-70ZXAT FAQ

1.How can I place an order for CY62128BNLL-70ZXAT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62128BNLL-70ZXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62128BNLL-70ZXAT reliable?

The price and inventory of CY62128BNLL-70ZXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62128BNLL-70ZXAT is usually 5 days.

3.What payment methods are accepted for CY62128BNLL-70ZXAT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62128BNLL-70ZXAT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62128BNLL-70ZXAT?

CY62128BNLL-70ZXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62128BNLL-70ZXAT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62128BNLL-70ZXAT?

For technical support, including CY62128BNLL-70ZXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62128BNLL-70ZXAT requirements.

6.How does Aetrix verify that CY62128BNLL-70ZXAT is sourced from the original manufacturer or authorized distributors?

All CY62128BNLL-70ZXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62128BNLL-70ZXAT meets industry standards.

7.What is the process for return or replacement of CY62128BNLL-70ZXAT?

All CY62128BNLL-70ZXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62128BNLL-70ZXAT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62128BNLL-70ZXAT part is unused and in its original packaging.

Return procedure for CY62128BNLL-70ZXAT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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