Infineon Technologies CY62128DV30LL-70ZXI
- Part No.:
- CY62128DV30LL-70ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62128DV30LL-70ZXI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62128DV30LL-70ZXI from Cypress Semiconductor is a 1-Mb (128K × 8) low-voltage CMOS static RAM with 70 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1.5 µA typical). It features dual chip enables (CE1/CE2), automatic power-down on address inactivity, and high-impedance I/O control during deselect/write. Used in battery-powered portable electronics requiring nonvolatile data retention and fast random access.
For engineers reviewing the CY62128DV30LL-70ZXI datasheet, CY62128DV30LL-70ZXI pinout, CY62128DV30LL-70ZXI application, or CY62128DV30LL-70ZXI equivalent, key selection criteria include MoBL®-optimized active/standby current, TSOP-I Pb-free packaging, CE-controlled power-down timing, and compatibility with 8-bit microcontroller memory buses.
Technical Context
The device implements a full CMOS 128K × 8 SRAM array with separate row/column decoders, sense amplifiers, and data drivers. Its dual CE architecture allows hierarchical memory expansion-CE1 active-low and CE2 active-low enable independent chip selection in multi-bank systems.
Power management relies on automatic CE-triggered power-down: when CE1 is HIGH or CE2 is LOW, ICC drops to ≤1.5 µA (LL grade), and I/O pins enter high-Z state. Address toggle detection reduces dynamic current by >90% during idle cycles without software intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 128K × 8 bits = 1 Mb total; supports byte-wide data bus interfacing without multiplexing. |
| Access Time | 70 ns max; ensures compatibility with 14 MHz microcontrollers and legacy ISA-style bus timing. |
| VCC Range | 2.2 V to 3.6 V; enables direct interface with 2.5 V and 3.3 V logic families and Li-ion battery systems. |
| ICC Active | 0.85 mA typical @ 1 MHz; reduces PCB-level power regulation burden in portable designs. |
| ISB2 Standby | 1.5 µA typical; extends battery life in sleep-mode applications such as handheld medical devices. |
| tPD | 70 ns max CE-to-power-down delay; guarantees deterministic low-power entry within one read cycle. |
| Package | 32-lead TSOP Type I (Pb-free); surface-mount compatible with standard reflow profiles and IPC-7351B land patterns. |
Pinout & Package
32-lead Thin Small Outline Package (TSOP Type I), Pb-free, JEDEC MO-153 compliant. Body dimensions: 11.8 mm × 10.0 mm × 1.2 mm. Pin pitch: 0.5 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; A16 is MSB for 128K boundary. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit CMOS-compatible data path; high-impedance when CE1=HIGH, CE2=LOW, OE=HIGH, or WE=LOW. |
| CE1 | Chip Enable 1 | Active-low primary enable; must be LOW with CE2 HIGH for read/write; drives automatic power-down when HIGH. |
| CE2 | Chip Enable 2 | Active-low secondary enable; complements CE1 for bank selection; LOW forces standby regardless of CE1. |
| OE | Output Enable | Active-low control for output drivers; HIGH disables outputs and places I/O pins in high-Z state. |
| WE | Write Enable | Active-low write strobe; LOW with CE1=LOW and CE2=HIGH initiates write cycle; controls data latching. |
| VCC | Supply Voltage | 2.2–3.6 V core power; decoupling required at pin per datasheet layout guidelines (Cbypass ≥ 0.1 µF). |
| GND | Ground Reference | Digital ground plane connection; requires low-inductance routing to minimize noise coupling into SRAM array. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 0.85 mA @ 1 MHz and standby to 1.5 µA, enabling >100-hour operation on coin-cell batteries. |
| Dual Chip Enable (CE1/CE2) | Enables seamless 2-chip memory expansion without external logic; CE2=LOW forces immediate standby even if CE1 is asserted. |
| Automatic Address-Inactivity Power-Down | Reduces dynamic current by >90% when address lines are static, eliminating need for software-controlled sleep modes. |
| High-Z Output Control Logic | Guarantees I/O pins enter high-impedance state on any combination of CE1=HIGH, CE2=LOW, OE=HIGH, or WE=LOW-preventing bus contention. |
| Pb-Free TSOP-I Packaging | Meets RoHS Directive 2011/65/EU; qualified for industrial temperature range (−40°C to +85°C) with JEDEC J-STD-020 moisture sensitivity level 3. |
Applications
| Portable Medical Devices | Industrial Data Loggers |
|---|---|
|
Use Scenario: Continuous ECG waveform buffering in handheld patient monitors with intermittent wireless upload. IC Role / Device Role / Timing Role: Byte-accessible SRAM buffer holding 128K samples before transmission; 70 ns access enables real-time sampling at 14 kHz. Use Value: 1.5 µA standby current extends single-CR2032 battery life to >12 months in sleep mode between measurements. |
Use Scenario: Local storage of sensor readings (temperature, pressure, humidity) in unattended field deployments. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM for firmware parameter storage and last-known-good configuration backup. Use Value: Dual CE architecture allows microcontroller to isolate this SRAM during deep-sleep while keeping other peripherals active. |
| Wireless Handheld Terminals | Automotive Infotainment UI Caches |
|
Use Scenario: Temporary storage of decoded barcode/RFID payloads and UI bitmap assets in logistics scanners. IC Role / Device Role / Timing Role: Low-voltage SRAM interfaced directly to 3.3 V ARM Cortex-M4 bus; no level-shifting required. Use Value: 2.2–3.6 V operating range matches Li-Po battery discharge curve (3.7 V → 2.8 V), eliminating intermediate regulators. |
Use Scenario: Caching frequently accessed navigation map tiles and voice command templates in head-unit systems. IC Role / Device Role / Timing Role: Fast-access memory for latency-sensitive UI rendering pipelines; co-located with display controller. Use Value: 70 ns tAA and tACE meet real-time rendering deadlines under worst-case junction temperature (85°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288BLL-70NLI | 70 ns access, same 128K × 8 organization, but 2.7–3.6 V only; higher standby current (5 µA typical). | Lacks 2.2 V support and automatic address-inactivity power-down; requires external sleep control. | Select when board already uses 3.3 V-only rail and simpler power sequencing is preferred. |
| ON Semiconductor CAT21128WI-GT3 | 70 ns access, 128K × 8, 2.7–3.6 V; integrated voltage detector and reset generator not present in CY62128DV30LL-70ZXI. | Includes POR and watchdog functions; occupies same footprint but adds system-level integration. | Choose when combining SRAM with power-on reset simplifies BOM count and reduces external components. |
Compared with IS62WV1288BLL-70NLI and CAT21128WI-GT3, CY62128DV30LL-70ZXI uniquely delivers sub-2V operation, automatic address-triggered power-down, and lower standby current-critical for energy-constrained portable designs where battery voltage droop and software overhead must be minimized.
Availability
CY62128DV30LL-70ZXI is available at Aetrix Electronics and suitable for portable medical devices, industrial data loggers, wireless handheld terminals, and automotive infotainment UI caches requiring stable component supply across extended product lifecycles.
Supply support for CY62128DV30LL-70ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer applications.
CY62128DV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and wide VCC tolerance are mandatory.
FAQ
What is the minimum VCC required for reliable data retention in CY62128DV30LL-70ZXI?
The device guarantees data retention down to VDR = 1.5 V, with typical data retention current of 3 µA at that voltage. Full functional operation requires VCC ≥ 2.2 V, but retained data remains valid during brown-out conditions as low as 1.5 V-enabling graceful shutdown in battery-powered systems.
How does the automatic power-down feature activate, and what triggers exit from that state?
Automatic power-down activates when CE1 is HIGH or CE2 is LOW and address lines remain static for >100 µs (tR). Exit occurs on first address transition after CE1 goes LOW and CE2 goes HIGH, with tPU = 0 ns-ensuring immediate resumption of read/write operations without added latency.
Can CY62128DV30LL-70ZXI be used with 2.5 V logic without level shifters?
Yes. Its input thresholds (VIH = 1.8 V min at 2.2–2.7 V VCC) and output drive (VOH ≥ 2.0 V at 2.5 V) are fully compatible with 2.5 V CMOS logic families. No level shifting is needed when interfacing with 2.5 V microcontrollers or FPGAs.
Is the TSOP-I package of CY62128DV30LL-70ZXI compatible with standard reflow profiles?
Yes. The Pb-free TSOP-I package is qualified to JEDEC J-STD-020 Class 3 moisture sensitivity and supports peak reflow temperatures up to 260°C for 30 seconds. Recommended profile follows IPC-J-STD-020D with ramp rate ≤3°C/s and time above 217°C of 60–150 seconds.
CY62128DV30LL-70ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
CY62128DV30LL-70ZXI FAQ
1.How can I place an order for CY62128DV30LL-70ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62128DV30LL-70ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62128DV30LL-70ZXI reliable?
The price and inventory of CY62128DV30LL-70ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62128DV30LL-70ZXI is usually 5 days.
3.What payment methods are accepted for CY62128DV30LL-70ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62128DV30LL-70ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62128DV30LL-70ZXI?
CY62128DV30LL-70ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62128DV30LL-70ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62128DV30LL-70ZXI?
For technical support, including CY62128DV30LL-70ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62128DV30LL-70ZXI requirements.
6.How does Aetrix verify that CY62128DV30LL-70ZXI is sourced from the original manufacturer or authorized distributors?
All CY62128DV30LL-70ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62128DV30LL-70ZXI meets industry standards.
7.What is the process for return or replacement of CY62128DV30LL-70ZXI?
All CY62128DV30LL-70ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62128DV30LL-70ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62128DV30LL-70ZXI part is unused and in its original packaging.
Return procedure for CY62128DV30LL-70ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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