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Infineon Technologies CY62128ELL-55ZAXET

Part No.:
CY62128ELL-55ZAXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-TFSOP (0.465", 11.80mm Width)
Datasheet:
AetrixCY62128ELL-55ZAXET.pdf
Description:
IC SRAM 1MBIT PARALLEL 32STSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,599

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Product details

Overview

CY62128ELL-55ZAXET from Cypress Semiconductor is a 1-Mbit (128 K × 8) CMOS static RAM with 45 ns access time (Industrial/Automotive-A grade), 4.5–5.5 V supply range, and ultra-low standby current (1 µA typical). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and TTL-level I/O compatibility-designed for battery-powered portable systems requiring reliable non-volatile data retention during sleep modes.

For engineers reviewing the CY62128ELL-55ZAXET datasheet, CY62128ELL-55ZAXET pinout, CY62128ELL-55ZAXET application, or CY62128ELL-55ZAXET equivalent, key selection criteria include its 32-pin TSOP-I package, dual CE architecture for memory expansion, guaranteed 55 ns access in Automotive-E temperature range (–40 °C to +125 °C), and CMOS-compatible input thresholds with TTL output drive capability.

Technical Context

The CY62128ELL-55ZAXET implements a 128K × 8 asynchronous SRAM array with complementary metal oxide semiconductor (CMOS) process technology, enabling high-speed operation at 55 ns tAA while maintaining ultra-low active current (1.3 mA typical at 1 MHz). Its dual chip enable (CE1 LOW and CE2 HIGH) logic supports hierarchical memory mapping and seamless bank expansion.

Automatic power-down activates when CE1 is HIGH or CE2 is LOW, reducing ICCDR to ≤30 µA in Automotive-E grade. The device uses TTL-compatible input voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and delivers VOH ≥ 2.4 V at IOH = –1 mA, ensuring interoperability with legacy 5 V microcontrollers and DSPs without level-shifting.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128 K × 8 bits - provides 1 Mbit of fast, non-refreshing random-access storage for firmware buffers or real-time data logging.
Access Time (tAA) 55 ns max (Automotive-E) - guarantees deterministic read latency for time-critical control loops in engine ECUs or ADAS sensors.
Supply Voltage Range 4.5 V to 5.5 V - supports direct connection to standard 5 V rail without regulation, compatible with industrial power supplies.
Standby Current (ISB2) 1 µA typical / 30 µA max (Automotive-E) - enables multi-year battery life in always-on telematics modules.
Operating Current (ICC) 1.3 mA typical at 1 MHz - minimizes thermal load in compact enclosures like medical handhelds or IoT gateways.
Temperature Range –40 °C to +125 °C (Automotive-E) - qualified for under-hood automotive applications per AEC-Q100 stress requirements.
I/O Interface TTL-compatible inputs, CMOS-compatible outputs - interfaces directly with legacy 5 V MCUs (e.g., Intel 8051, TI MSP430) without external translators.

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP) Type I, 11.8 mm × 10.0 mm × 1.0 mm body, lead pitch 0.5 mm, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus supporting full 128K-word addressing; no internal latching - requires stable address during CE/OE assertion.
I/O0–I/O7 Bidirectional Data Bus 8-bit multiplexed data path; enters high-impedance state when CE1 HIGH/CE2 LOW, OE HIGH, or WE LOW during write.
CE1, CE2 Dual Chip Enable Inputs Active-LOW CE1 AND active-HIGH CE2 required for selection; enables hierarchical decoding and memory banking without external logic.
OE Output Enable Active-LOW control for read data gating; independent of CE state - allows output disable while chip remains selected.
WE Write Enable Active-LOW signal initiating write cycle; timing-critical edge must overlap valid address and data setup/hold windows.
VCC, VSS Power Supply Pins VCC = 4.5–5.5 V; VSS = ground reference; decoupling capacitor (0.1 µF) required within 10 mm of VCC pin for noise immunity.
NC No Connect Pin 27 (A15) is NC - not bonded on die; must be left unconnected or tied to GND per layout guidelines.

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces standby current by >99% vs. standard SRAMs, enabling multi-year operation on coin-cell batteries in remote sensors.
Dual Chip Enable (CE1/CE2) Enables seamless 2× memory expansion using only one additional address line - eliminates need for external decode logic in stacked RAM designs.
Automatic Power-Down Mode Activates instantly on CE deassertion, eliminating software-controlled sleep entry sequences and reducing firmware complexity.
TTL-Level Input Compatibility Accepts VIH ≥ 2.2 V and VIL ≤ 0.8 V - interoperable with legacy 5 V microcontrollers without level shifters or pull-up resistors.
Guaranteed 55 ns Access in Automotive-E Grade Validated across –40 °C to +125 °C ambient - ensures deterministic timing in engine control units exposed to thermal cycling.

Applications

Automotive Engine Control Unit (ECU) Portable Medical Monitor

Use Scenario: Real-time storage of sensor calibration tables and fault logs during engine runtime and ignition-off periods.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with 8051-based ECU MCU via 8-bit data bus and 17-bit address lines.

Use Value: 55 ns access time ensures zero-cycle-wait reads for lookup tables; 30 µA max standby current preserves battery charge during vehicle dormancy.

Use Scenario: Temporary storage of waveform samples (ECG, SpO₂) before compression and wireless transmission in handheld diagnostic devices.

IC Role / Device Role / Timing Role: High-speed data capture buffer synchronized to ADC sampling clock, accessed by ARM Cortex-M0+ processor.

Use Value: 1.3 mA typical active current minimizes thermal rise in sealed plastic housing; TSOP-I package enables compact PCB layout.

Industrial PLC I/O Module Smart Meter Data Logger

Use Scenario: Holding configuration parameters and transient I/O status snapshots during brown-out events in programmable logic controllers.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM retaining critical state data when main 5 V rail drops below 4.5 V.

Use Value: Guaranteed data retention down to VCC = 2.0 V with ≤30 µA current draw - extends safe shutdown window by >100 ms.

Use Scenario: Cyclic buffering of hourly energy consumption records in ANSI C12.19-compliant utility meters operating on lithium-thionyl chloride cells.

IC Role / Device Role / Timing Role: Low-leakage memory storing 30 days of interval data before upload via RF or PLC interface.

Use Value: 1 µA typical ISB2 enables >15-year battery life; Automotive-E temperature rating ensures reliability in outdoor meter enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV1288BLL-55QLI 55 ns access, same 128K × 8 organization, but uses single CE and operates at 2.7–3.6 V only. Requires level-shifting for 5 V systems; unsuitable for direct replacement in existing 5 V designs. Select only if migrating to 3.3 V architecture and redesigning power delivery and I/O interface.
ON Semiconductor NVSRAM NVTFS1288L-55Z Integrated EEPROM backup; 55 ns SRAM access but higher standby current (100 µA typical) and larger 48-pin TSSOP package. Provides non-volatility without external backup circuitry - adds cost and board area but eliminates data loss risk on power failure. Choose when data persistence across unlimited power cycles is mandatory, and 100 µA standby is acceptable.

Compared with IS62WV1288BLL-55QLI and NVTFS1288L-55Z, the CY62128ELL-55ZAXET uniquely delivers 5 V native operation, dual CE expandability, and sub-µA standby in a 32-pin TSOP - making it optimal for cost-sensitive, space-constrained 5 V automotive and industrial upgrades.

Availability

CY62128ELL-55ZAXET is available at Aetrix Electronics and suitable for automotive engine control units, portable medical monitors, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62128ELL-55ZAXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and consumer applications, with headquarters in San Jose, CA.

The CY62128E MoBL® product line targets portable and battery-operated systems requiring ultra-low-power, high-speed SRAM with robust temperature performance - specifically engineered for extended-life telemetry, sensor nodes, and automotive subsystems.

FAQ

Is CY62128ELL-55ZAXET pin-compatible with CY62128B series devices?

Yes, CY62128ELL-55ZAXET is explicitly pin-compatible with CY62128B devices per Cypress documentation. It retains identical 32-pin TSOP-I pinout, address/data bus mapping, and CE/OE/WE signal assignments - enabling drop-in replacement without PCB revision. However, the newer device offers improved standby current (1 µA vs. 5 µA typical) and tighter AC timing specifications.

What is the maximum data retention voltage (VDR) for CY62128ELL-55ZAXET?

The maximum data retention voltage (VDR) is 2.0 V minimum across all grades. At this voltage, the device maintains stored data with ICCDR ≤30 µA (Automotive-E) while CE1 is HIGH or CE2 is LOW. Data retention is guaranteed for indefinite duration as long as VCC remains ≥VDR and ambient temperature stays within rated range.

Can CY62128ELL-55ZAXET interface directly with a 3.3 V microcontroller?

No - CY62128ELL-55ZAXET requires 4.5–5.5 V VCC and has TTL-compatible inputs (VIH ≥ 2.2 V), but its outputs swing to VOH ≥ 2.4 V at –1 mA, which may not meet 3.3 V MCU VIH minimums (typically 2.0 V). Direct interface risks marginal logic-high recognition; a level translator or voltage divider is required for reliable operation.

Does CY62128ELL-55ZAXET support byte-wide writes?

No - CY62128ELL-55ZAXET lacks individual byte-write enable pins. All eight I/O lines (I/O0–I/O7) operate as a unified 8-bit bus; writes always affect the full byte at the addressed location. To modify single bytes, the host processor must read-modify-write the entire word, increasing software overhead and bus traffic.

CY62128ELL-55ZAXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
32-TFSOP (0.465", 11.80mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-sTSOP

CY62128ELL-55ZAXET FAQ

1.How can I place an order for CY62128ELL-55ZAXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62128ELL-55ZAXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62128ELL-55ZAXET reliable?

The price and inventory of CY62128ELL-55ZAXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62128ELL-55ZAXET is usually 5 days.

3.What payment methods are accepted for CY62128ELL-55ZAXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62128ELL-55ZAXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62128ELL-55ZAXET?

CY62128ELL-55ZAXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62128ELL-55ZAXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62128ELL-55ZAXET?

For technical support, including CY62128ELL-55ZAXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62128ELL-55ZAXET requirements.

6.How does Aetrix verify that CY62128ELL-55ZAXET is sourced from the original manufacturer or authorized distributors?

All CY62128ELL-55ZAXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62128ELL-55ZAXET meets industry standards.

7.What is the process for return or replacement of CY62128ELL-55ZAXET?

All CY62128ELL-55ZAXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62128ELL-55ZAXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62128ELL-55ZAXET part is unused and in its original packaging.

Return procedure for CY62128ELL-55ZAXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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