Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62128EV30LL-45ZAXIT

Part No.:
CY62128EV30LL-45ZAXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-TFSOP (0.465", 11.80mm Width)
Datasheet:
AetrixCY62128EV30LL-45ZAXIT.pdf
Description:
IC SRAM 1MBIT PARALLEL 32STSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,206

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62128EV30LL-45ZAXIT from Cypress Semiconductor is a 1-Mbit (128K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic power-down on chip deselect, and pin compatibility with CY62128DV30 - used in battery-powered portable electronics requiring fast, low-power memory.

For engineers reviewing the CY62128EV30LL-45ZAXIT datasheet, CY62128EV30LL-45ZAXIT pinout, CY62128EV30LL-45ZAXIT application, or CY62128EV30LL-45ZAXIT equivalent, key selection criteria include access timing under 45 ns, sub-2 µA standby current at 3.6 V, dual chip enable (CE1/CE2) logic for hierarchical memory mapping, and STSOP-32 package compatibility with space-constrained PCB layouts.

Technical Context

The CY62128EV30LL-45ZAXIT implements a fully static 128K × 8 memory array with complementary metal oxide semiconductor (CMOS) process technology optimized for speed-power trade-off. Its dual CE architecture (CE1 active-low, CE2 active-high) enables seamless bank selection in multi-chip memory systems without external logic.

Automatic power-down activates when CE1 is HIGH or CE2 is LOW, reducing ICC to ≤4 µA while maintaining data retention down to 1.5 V. All eight I/O pins enter high-impedance state during deselect, OE HIGH, or write cycles - ensuring clean bus sharing in shared-data-path architectures.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 8 bits - supports byte-wide data buses without address decoding overhead
Access Time 45 ns max - guarantees deterministic read latency for real-time firmware execution
Supply Voltage Range 2.2 V to 3.6 V - compatible with Li-ion battery discharge curve and 3.3 V system rails
Standby Current 1 µA typical / 4 µA max at 3.6 V - enables multi-year battery life in always-on sensor nodes
Active Current 1.3 mA typical at 1 MHz - minimizes thermal load in compact handheld enclosures
Data Retention Voltage 1.5 V min - preserves memory contents during brown-out or sleep-mode VCC scaling
Operating Temperature –40 °C to +85 °C - qualified for industrial-grade embedded control and automotive infotainment modules

Pinout & Package

Package: 32-pin Shrunk Thin Small Outline Package (STSOP), 8.0 mm × 13.4 mm body, 0.5 mm pitch, lead-free (RoHS-compliant).

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address inputs 17-bit address bus supporting full 128K-word addressing; no internal latching required
I/O0–I/O7 Bidirectional data bus Tri-state outputs automatically disabled during deselect, OE HIGH, or write - eliminates need for external bus transceivers
CE1, CE2 Chip enable controls CE1 active-low + CE2 active-high logic forms AND-gated chip select - enables hierarchical memory banking and partial array disable
OE Output enable Controls output buffer only; does not affect internal timing or power state - allows read-modify-write without toggling CE
WE Write enable Edge-triggered write control; low pulse initiates write cycle with overlap-based timing - supports asynchronous burst writes
VCC, GND Power terminals Single 2.2–3.6 V supply; decoupling required within 5 mm of VCC/GND pins per JEDEC MO-220 standards

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces active current to 1.3 mA at 1 MHz and standby to 1 µA - extends battery runtime in portable medical devices
Dual Chip Enable Logic (CE1/CE2) Enables seamless memory expansion across multiple SRAMs using simple NAND gate or FPGA GPIO - no address decoder IC needed
Automatic Power-Down on Deselect Guarantees >99% power reduction when CE1 HIGH or CE2 LOW - eliminates software-controlled sleep mode complexity
High-Impedance Output Control I/O pins enter Hi-Z on CE/OE/WE transitions - prevents bus contention in multi-master systems like CAN+SRAM co-processor designs
Pb-Free STSOP-32 Package 0.5 mm pitch, 8.0 × 13.4 mm footprint - fits high-density layouts in wearables and IoT edge nodes where board area is constrained

Applications

Portable Medical Monitor Industrial PLC Data Buffer

Use Scenario: Real-time ECG waveform capture and local buffering before wireless transmission.

IC Role / Device Role / Timing Role: High-speed, low-power SRAM storing 128K samples at 1 kS/s with deterministic 45 ns read latency.

Use Value: Sub-2 µA standby current preserves battery charge during idle periods between patient measurements.

Use Scenario: Temporary storage of sensor fusion data in modular automation controllers with limited board space.

IC Role / Device Role / Timing Role: Byte-accessible memory interfaced directly to ARM Cortex-M4 bus with zero-wait-state operation.

Use Value: Dual CE logic allows dynamic allocation of memory banks across multiple I/O modules without FPGA resource overhead.

Automotive Infotainment Cache Wireless Sensor Node Memory

Use Scenario: Caching UI assets and navigation map tiles in head-unit systems operating across vehicle temperature extremes.

IC Role / Device Role / Timing Role: Industrial-temp SRAM retaining data integrity from –40 °C to +85 °C with 1.5 V data retention margin.

Use Value: 45 ns access time ensures responsive GUI rendering even during concurrent Bluetooth and audio processing.

Use Scenario: Storing encrypted sensor logs in battery-powered environmental monitoring nodes deployed outdoors.

IC Role / Device Role / Timing Role: Low-leakage SRAM holding timestamped readings during multi-day deep-sleep intervals.

Use Value: 1 µA typical ISB2 enables >5-year battery life using CR2032 cells under periodic wake-up duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV1288BLL-45NLI Same 128K × 8 organization, 45 ns speed, but uses single CE (active-low) and operates at 2.7–3.6 V only. Lacks dual CE logic - requires external gating for multi-bank expansion; unsuitable for hierarchical memory maps. Select when board layout already uses single-CE SRAM footprint and voltage rail is fixed at ≥2.7 V.
ON Semiconductor NVSRAM NVMFS128K8PLFT Non-volatile SRAM with integrated EEPROM backup; 55 ns access, 2.7–3.6 V, higher standby current (10 µA). Provides automatic data retention after power loss - adds cost and complexity where battery-backed volatile SRAM suffices. Choose only if guaranteed data persistence during unexpected power interruption is mandatory.

Compared with IS62WV1288BLL-45NLI and NVMFS128K8PLFT, the CY62128EV30LL-45ZAXIT delivers superior flexibility in memory hierarchy design via dual CE, wider voltage tolerance for battery-decay scenarios, and lowest standby current - making it optimal for portable, energy-constrained systems where deterministic volatility is acceptable.

Availability

CY62128EV30LL-45ZAXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY62128EV30LL-45ZAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with headquarters in San Jose, CA.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications, emphasizing ultra-low standby current, wide voltage operation, and compact packaging - directly addressing design constraints in wearables, medical devices, and IoT endpoints.

FAQ

What is the minimum VCC required to retain data in CY62128EV30LL-45ZAXIT?

Data retention is guaranteed down to 1.5 V, as specified in the Data Retention Characteristics table (VDR = 1.5 V min). At this voltage, ICCDR remains ≤3 µA, enabling extended hold time during brown-out conditions. The device maintains stored data without refresh as long as VCC stays ≥1.5 V and CE1/CE2 remain in deselect state.

How does the dual CE architecture (CE1 and CE2) function in practice?

CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) for the device to be selected. This AND-gated logic allows hierarchical memory mapping - e.g., one FPGA GPIO drives CE2 globally while multiple CE1 lines select individual SRAMs, reducing address decoder complexity.

Can CY62128EV30LL-45ZAXIT operate reliably at 2.2 V across the full industrial temperature range?

Yes - the Electrical Characteristics table explicitly specifies operation from 2.2 V to 3.6 V over –40 °C to +85 °C. At 2.2 V, VIH is defined as 1.8 V min and VOL remains ≤0.4 V, ensuring robust noise margins. AC timing parameters (e.g., tRC = 45 ns) are guaranteed across this full voltage and temperature envelope.

Is the STSOP-32 package of CY62128EV30LL-45ZAXIT compatible with standard TSOP-32 PCB footprints?

No - STSOP (Shrunk TSOP) has identical pin count but smaller body dimensions (8.0 × 13.4 mm vs. TSOP-I's 10.16 × 20.0 mm) and tighter 0.5 mm pitch. It requires dedicated STSOP-32 land pattern per Cypress package drawing 001-85211. Mechanical interference and solder joint reliability will be compromised if substituted into a TSOP-32 layout.

CY62128EV30LL-45ZAXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
32-TFSOP (0.465", 11.80mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-sTSOP

CY62128EV30LL-45ZAXIT FAQ

1.How can I place an order for CY62128EV30LL-45ZAXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62128EV30LL-45ZAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62128EV30LL-45ZAXIT reliable?

The price and inventory of CY62128EV30LL-45ZAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62128EV30LL-45ZAXIT is usually 5 days.

3.What payment methods are accepted for CY62128EV30LL-45ZAXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62128EV30LL-45ZAXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62128EV30LL-45ZAXIT?

CY62128EV30LL-45ZAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62128EV30LL-45ZAXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62128EV30LL-45ZAXIT?

For technical support, including CY62128EV30LL-45ZAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62128EV30LL-45ZAXIT requirements.

6.How does Aetrix verify that CY62128EV30LL-45ZAXIT is sourced from the original manufacturer or authorized distributors?

All CY62128EV30LL-45ZAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62128EV30LL-45ZAXIT meets industry standards.

7.What is the process for return or replacement of CY62128EV30LL-45ZAXIT?

All CY62128EV30LL-45ZAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62128EV30LL-45ZAXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62128EV30LL-45ZAXIT part is unused and in its original packaging.

Return procedure for CY62128EV30LL-45ZAXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62128EV30LL-45ZAXIT Tags

  • CY62128EV30LL-45ZAXIT
  • CY62128EV30LL-45ZAXIT PDF
  • CY62128EV30LL-45ZAXIT Datasheet
  • CY62128EV30LL-45ZAXIT Specifications
  • CY62128EV30LL-45ZAXIT Images
  • Infineon Technologies
  • Infineon Technologies CY62128EV30LL-45ZAXIT
  • Buy CY62128EV30LL-45ZAXIT
  • CY62128EV30LL-45ZAXIT Price
  • CY62128EV30LL-45ZAXIT Distributor
  • CY62128EV30LL-45ZAXIT Supplier
  • CY62128EV30LL-45ZAXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER