Infineon Technologies CY62128EV30LL-45ZAXIT
- Part No.:
- CY62128EV30LL-45ZAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62128EV30LL-45ZAXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32STSOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,206
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62128EV30LL-45ZAXIT from Cypress Semiconductor is a 1-Mbit (128K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), automatic power-down on chip deselect, and pin compatibility with CY62128DV30 - used in battery-powered portable electronics requiring fast, low-power memory.
For engineers reviewing the CY62128EV30LL-45ZAXIT datasheet, CY62128EV30LL-45ZAXIT pinout, CY62128EV30LL-45ZAXIT application, or CY62128EV30LL-45ZAXIT equivalent, key selection criteria include access timing under 45 ns, sub-2 µA standby current at 3.6 V, dual chip enable (CE1/CE2) logic for hierarchical memory mapping, and STSOP-32 package compatibility with space-constrained PCB layouts.
Technical Context
The CY62128EV30LL-45ZAXIT implements a fully static 128K × 8 memory array with complementary metal oxide semiconductor (CMOS) process technology optimized for speed-power trade-off. Its dual CE architecture (CE1 active-low, CE2 active-high) enables seamless bank selection in multi-chip memory systems without external logic.
Automatic power-down activates when CE1 is HIGH or CE2 is LOW, reducing ICC to ≤4 µA while maintaining data retention down to 1.5 V. All eight I/O pins enter high-impedance state during deselect, OE HIGH, or write cycles - ensuring clean bus sharing in shared-data-path architectures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8 bits - supports byte-wide data buses without address decoding overhead |
| Access Time | 45 ns max - guarantees deterministic read latency for real-time firmware execution |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with Li-ion battery discharge curve and 3.3 V system rails |
| Standby Current | 1 µA typical / 4 µA max at 3.6 V - enables multi-year battery life in always-on sensor nodes |
| Active Current | 1.3 mA typical at 1 MHz - minimizes thermal load in compact handheld enclosures |
| Data Retention Voltage | 1.5 V min - preserves memory contents during brown-out or sleep-mode VCC scaling |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and automotive infotainment modules |
Pinout & Package
Package: 32-pin Shrunk Thin Small Outline Package (STSOP), 8.0 mm × 13.4 mm body, 0.5 mm pitch, lead-free (RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128K-word addressing; no internal latching required |
| I/O0–I/O7 | Bidirectional data bus | Tri-state outputs automatically disabled during deselect, OE HIGH, or write - eliminates need for external bus transceivers |
| CE1, CE2 | Chip enable controls | CE1 active-low + CE2 active-high logic forms AND-gated chip select - enables hierarchical memory banking and partial array disable |
| OE | Output enable | Controls output buffer only; does not affect internal timing or power state - allows read-modify-write without toggling CE |
| WE | Write enable | Edge-triggered write control; low pulse initiates write cycle with overlap-based timing - supports asynchronous burst writes |
| VCC, GND | Power terminals | Single 2.2–3.6 V supply; decoupling required within 5 mm of VCC/GND pins per JEDEC MO-220 standards |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 1.3 mA at 1 MHz and standby to 1 µA - extends battery runtime in portable medical devices |
| Dual Chip Enable Logic (CE1/CE2) | Enables seamless memory expansion across multiple SRAMs using simple NAND gate or FPGA GPIO - no address decoder IC needed |
| Automatic Power-Down on Deselect | Guarantees >99% power reduction when CE1 HIGH or CE2 LOW - eliminates software-controlled sleep mode complexity |
| High-Impedance Output Control | I/O pins enter Hi-Z on CE/OE/WE transitions - prevents bus contention in multi-master systems like CAN+SRAM co-processor designs |
| Pb-Free STSOP-32 Package | 0.5 mm pitch, 8.0 × 13.4 mm footprint - fits high-density layouts in wearables and IoT edge nodes where board area is constrained |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
|
Use Scenario: Real-time ECG waveform capture and local buffering before wireless transmission. IC Role / Device Role / Timing Role: High-speed, low-power SRAM storing 128K samples at 1 kS/s with deterministic 45 ns read latency. Use Value: Sub-2 µA standby current preserves battery charge during idle periods between patient measurements. |
Use Scenario: Temporary storage of sensor fusion data in modular automation controllers with limited board space. IC Role / Device Role / Timing Role: Byte-accessible memory interfaced directly to ARM Cortex-M4 bus with zero-wait-state operation. Use Value: Dual CE logic allows dynamic allocation of memory banks across multiple I/O modules without FPGA resource overhead. |
| Automotive Infotainment Cache | Wireless Sensor Node Memory |
|
Use Scenario: Caching UI assets and navigation map tiles in head-unit systems operating across vehicle temperature extremes. IC Role / Device Role / Timing Role: Industrial-temp SRAM retaining data integrity from –40 °C to +85 °C with 1.5 V data retention margin. Use Value: 45 ns access time ensures responsive GUI rendering even during concurrent Bluetooth and audio processing. |
Use Scenario: Storing encrypted sensor logs in battery-powered environmental monitoring nodes deployed outdoors. IC Role / Device Role / Timing Role: Low-leakage SRAM holding timestamped readings during multi-day deep-sleep intervals. Use Value: 1 µA typical ISB2 enables >5-year battery life using CR2032 cells under periodic wake-up duty cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288BLL-45NLI | Same 128K × 8 organization, 45 ns speed, but uses single CE (active-low) and operates at 2.7–3.6 V only. | Lacks dual CE logic - requires external gating for multi-bank expansion; unsuitable for hierarchical memory maps. | Select when board layout already uses single-CE SRAM footprint and voltage rail is fixed at ≥2.7 V. |
| ON Semiconductor NVSRAM NVMFS128K8PLFT | Non-volatile SRAM with integrated EEPROM backup; 55 ns access, 2.7–3.6 V, higher standby current (10 µA). | Provides automatic data retention after power loss - adds cost and complexity where battery-backed volatile SRAM suffices. | Choose only if guaranteed data persistence during unexpected power interruption is mandatory. |
Compared with IS62WV1288BLL-45NLI and NVMFS128K8PLFT, the CY62128EV30LL-45ZAXIT delivers superior flexibility in memory hierarchy design via dual CE, wider voltage tolerance for battery-decay scenarios, and lowest standby current - making it optimal for portable, energy-constrained systems where deterministic volatility is acceptable.
Availability
CY62128EV30LL-45ZAXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for CY62128EV30LL-45ZAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with headquarters in San Jose, CA.
The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications, emphasizing ultra-low standby current, wide voltage operation, and compact packaging - directly addressing design constraints in wearables, medical devices, and IoT endpoints.
FAQ
What is the minimum VCC required to retain data in CY62128EV30LL-45ZAXIT?
Data retention is guaranteed down to 1.5 V, as specified in the Data Retention Characteristics table (VDR = 1.5 V min). At this voltage, ICCDR remains ≤3 µA, enabling extended hold time during brown-out conditions. The device maintains stored data without refresh as long as VCC stays ≥1.5 V and CE1/CE2 remain in deselect state.
How does the dual CE architecture (CE1 and CE2) function in practice?
CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) for the device to be selected. This AND-gated logic allows hierarchical memory mapping - e.g., one FPGA GPIO drives CE2 globally while multiple CE1 lines select individual SRAMs, reducing address decoder complexity.
Can CY62128EV30LL-45ZAXIT operate reliably at 2.2 V across the full industrial temperature range?
Yes - the Electrical Characteristics table explicitly specifies operation from 2.2 V to 3.6 V over –40 °C to +85 °C. At 2.2 V, VIH is defined as 1.8 V min and VOL remains ≤0.4 V, ensuring robust noise margins. AC timing parameters (e.g., tRC = 45 ns) are guaranteed across this full voltage and temperature envelope.
Is the STSOP-32 package of CY62128EV30LL-45ZAXIT compatible with standard TSOP-32 PCB footprints?
No - STSOP (Shrunk TSOP) has identical pin count but smaller body dimensions (8.0 × 13.4 mm vs. TSOP-I's 10.16 × 20.0 mm) and tighter 0.5 mm pitch. It requires dedicated STSOP-32 land pattern per Cypress package drawing 001-85211. Mechanical interference and solder joint reliability will be compromised if substituted into a TSOP-32 layout.
CY62128EV30LL-45ZAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-sTSOP
CY62128EV30LL-45ZAXIT FAQ
1.How can I place an order for CY62128EV30LL-45ZAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62128EV30LL-45ZAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62128EV30LL-45ZAXIT reliable?
The price and inventory of CY62128EV30LL-45ZAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62128EV30LL-45ZAXIT is usually 5 days.
3.What payment methods are accepted for CY62128EV30LL-45ZAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62128EV30LL-45ZAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62128EV30LL-45ZAXIT?
CY62128EV30LL-45ZAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62128EV30LL-45ZAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62128EV30LL-45ZAXIT?
For technical support, including CY62128EV30LL-45ZAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62128EV30LL-45ZAXIT requirements.
6.How does Aetrix verify that CY62128EV30LL-45ZAXIT is sourced from the original manufacturer or authorized distributors?
All CY62128EV30LL-45ZAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62128EV30LL-45ZAXIT meets industry standards.
7.What is the process for return or replacement of CY62128EV30LL-45ZAXIT?
All CY62128EV30LL-45ZAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62128EV30LL-45ZAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62128EV30LL-45ZAXIT part is unused and in its original packaging.
Return procedure for CY62128EV30LL-45ZAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62128EV30LL-45ZAXIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

