Infineon Technologies CY62136ESL-45ZSXI

Overview

CY62136ESL-45ZSXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (1 µA typical), and automatic CE-controlled power-down. It serves as a low-power, high-speed data buffer in portable embedded systems requiring battery longevity and TTL-level interfacing.

For engineers reviewing the CY62136ESL-45ZSXI datasheet, CY62136ESL-45ZSXI pinout, CY62136ESL-45ZSXI application, or CY62136ESL-45ZSXI equivalent, key selection criteria include its 44-pin TSOP II package, byte-wide I/O control via BHE/ BLE, CMOS-compatible active power (2 mA at 1 MHz), and industrial temperature range (–40 °C to +85 °C).

Technical Context

The CY62136ESL-45ZSXI implements a 128K × 16 asynchronous SRAM architecture with independent byte enable (BHE/BLE) for selective 8-bit writes, TTL-compatible input thresholds, and tri-state output control via OE, CE, and byte enables. Its automatic power-down activates when CE is HIGH and address lines are static, reducing ICC to ≤7 µA.

It supports three read modes (address-, OE-, and CE-controlled) and two write modes (CE/WE- and WE-controlled), with guaranteed timing parameters including tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns. Data retention is supported down to VCC = 1.0 V with ICCDR ≤3 µA.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), 400 mil width, lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and R1LV25616ASB-45SI, the CY62136ESL-45ZSXI uniquely supports both 2.2–3.6 V and 4.5–5.5 V operation without external level shifters, making it the only drop-in solution for legacy 5 V and modern low-voltage systems sharing the same PCB layout.

Availability

CY62136ESL-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLCs, handheld scanners, and automotive body control modules requiring stable component supply across extended temperature and dual-voltage operation.

Supply support for CY62136ESL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for embedded systems.

The CY62136ESL belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated applications where extended runtime and fast random-access performance are critical.

FAQ

Is CY62136ESL-45ZSXI compatible with 5 V TTL microcontrollers without level shifting?

Yes. The device accepts VIH ≥ 2.2 V across both 2.7–3.6 V and 4.5–5.5 V VCC ranges, and VOH reaches 3.4 V (min) at 5 V, meeting standard TTL input thresholds. Its inputs tolerate up to 6.0 V, enabling direct connection to 5 V buses without external translators.

How does automatic power-down activate, and what triggers exit from standby?

Automatic power-down engages when CE is HIGH and all address lines remain static for ≥100 µs, reducing ICC to ≤7 µA. Exit occurs on the first address transition after CE goes LOW, with tPU = 0 ns guarantee-no delay before valid data output. OE and WE states do not affect this mode.

Can I use only the low byte (I/O0–I/O7) while leaving BHE floating?

No. BHE must be tied to a defined CMOS logic level (VCC or GND) to meet ISB1/ISB2 specifications. Floating BHE violates datasheet requirements and may cause excessive standby current or undefined output states. Tie BHE HIGH if unused to disable high-byte I/O.

What is the maximum data retention time at 1.0 V VCC?

The device guarantees data retention indefinitely at VCC ≥ 1.0 V, provided CE remains HIGH and ambient temperature stays within –40 °C to +85 °C. ICCDR is specified at ≤3 µA under these conditions, enabling years of retention on backup capacitors or supercapacitors.